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RISS 인기검색어
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- 저자 : 황인홍(Inhong Hwang) (검색결과 2 건)
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황인홍(Inhong Hwang),최문기(Moongi Choi) 한국의학교육학회 2001 Korean journal of medical education Vol.13 No.2
In order to compare a group of examinees to other group, the tests taken by two groups of examinees should be equivalent. The first step of the equating the test is to make anchor items. In medical schools, the students prepare the examination through the thorough review of the test items of previous year. So it is said that the reuse of the same items could be undesirable. The purpose of this study is to find out response variations to the same items between two consecutive grades when the items are reused. The senior classes of a medical school are sampled and the test items of graduation examination was analysed. On the basis of item difficulty (item s p-value) and discrimination index, we selected 35 items. Next year, we reused those items to the same examination to the senior class of that year, and the result was analysed. Among those 35 items, 14 items were modified slightly. The averages of the item difficulty and discrimination index on the previous examination were 0.49 and 0.20 which were in the desirable ranges. But at the next year these data were worsened to 0.84 and 0.10 respectively. This trends were not different in the slightly modified items. And there was no significant differences among the item groups classified on the basis of the level of knowledge. We could ascertain that if a previously used item used again to a test, the item difficulty will increase (become easy) and discrimination index will decrease even though minor modification is done.
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트랜지스터용 p-형 산화물 반도체(니켈 산화물, 주석 산화물, 구리 산화물) 최신 동향 분석
최민기(Minki Choe),전다희(Dahui Jeon),황인홍(Inhong Hwang),백인환(In-Hwan Baek) 한국세라믹학회 2023 세라미스트 Vol.26 No.1
Over the past decade, many research groups have been striving to develop high-performance p-type switching oxide materials for implementing complementary metal-oxide-semiconductor (CMOS) thin film devices. However, realizing p-type oxide thin film transistors (TFTs) whose electrical properties are comparable to n-type oxide TFTs has been challenging. This is because of inherent characteristics of p-type oxide materials such as the high formation energy of native acceptors and high hole effective mass caused by localized hole transport path. Developing a p-type oxide with a delocalized hole transport pathway and low hole formation energy is crucial for the production of CMOS circuits utilizing oxide thin films. NiO, SnO, and CuOx are being actively studied as candidate materials that satisfy these requirements. This review discusses the latest advances in the synthesis method of p-type binary oxide thin films and the approach for electrical performance enhancement.
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