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The Effect of Bake Temperature on SU-8 Gate Insulator of IGZO Thin Film Transistor
홍민택,문승재,이종모,배병성,윤의중,Maxime Harnois,Emmanuel Jacques,Tayeb Mohammed-Brahim 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.73 No.3
SU-8 photoresist was applied to the gate insulator of a-IGZO TFT. The hard bake temperature of SU-8 is important and was varied from 95 to 185 °C. The FTIR showed that hard-bake temperature higher than 125 °C is necessary for complete polymerization. The leakage current and breakdown voltage were improved as increasing hard bake temperatures to 155 °C. However, the crack was generated at 185 °C degrading the electrical characteristics of insulator. The SU-8 insulator was successfully applied to a-IGZO TFT where the on-off ratio was highest for hard-bake temperature of 155 °C.
Analog-to-digital converter with oxide thin-film transistors
황준영,홍민택,윤의중,배병성 한국정보디스플레이학회 2016 Journal of information display Vol.17 No.2
A three-bit flash analog-to-digital converter (ADC) consisting of inverter-based comparators and logic gates using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs) was developed. The TFT has a bottom gate structure with a methyl-siloxane-based organic spin-on-glass passivation layer, which reduces the plasma damage on the active layer. A bootstrapped logic gate structure was used in the proposed ADC to overcome the reduced output swing in the inverters and the NAND gates caused by using only n-type a-IGZO TFTs. The output signals of the developed three-bit flash ADC with a-IGZO TFTs well matched the analog inputs. The output voltage swing was 0.2–3.6 V, well matching the simulation result. The three-bit flash ADC was verified up to the 1 kHz operation frequency, and thus can be used in sensor applications such as the wearable sensor display and the integrated biosensing platform.