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Dual Structure of Cholesteric Liquid Crystal Device for High Reflectance
배병성,한승오,신성식,Ken Chen,Chao Ping Chen,Yikai Su,전철규 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.6
The structure of cholesteric liquid crystal (CLC) undergoes a helical distortion which is left-handed or righthanded. By the right-hand CLC layer, Left-handed polarized light is reflected and vice versa. The color reflected by the selective reflection depends on the chiral pitch and the anisotropy of the refractive index. However, the reflectance of the single CLC layer is theoretically limited to 50% because only one of right- or left-handed circularly polarized light is reflected. In this paper, we demonstrate the enhanced reflectance of a dual-CLC device which can reflect both right- and left-handed circularly polarized light.
유진태(Daniel J.T Yuh)배병성(Byung-Seong Bae) 호서대학교 공업기술연구소 2007 공업기술연구 논문집 Vol.26 No.1
For the highest display quality in the large thin film transistor liquid crystal displays (TFT LCDs), we should improve the flicker characteristics. One of the problems accompanying the large TFT LCDs is that there is Gate/Data signal delay caused by increase of the resistance and the parasitic capacitance of each long signal line. In this paper, level shift of pixel voltage mainly causing flicker in the large TFT LCDs was investigated. A gate and data delay effect on level shift of pixel voltage, and an aspect of variations of level shift of pixel voltage according to the gate and data signal schematic was evaluated.
서한별,배병성,방효인,윤의중 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.73 No.3
We investigated the device properties of sputter-deposited tin-oxide (SnO) thin-film transistors (TFTs) in which the SnOx active layers were deposited by using a SnO sputtering target. The developed SnO-TFTs had a bottom-gate staggered or coplanar structure, which used a heavilydoped Si wafer as a gate electrode and 300-nm-thick SiO2 as a gate dielectric layer. The TFTs with SnOx thin-films deposited using a high radio-frequency (RF) power of 100 W, a very high working pressure of 20 mTorr, and an oxygen ratio of 0% revealed n-type characteristics. The coplanar SnOxbased TFTs showed better n-type characteristics than the staggered ones, which was attributed to the good quality of the sputtered damage-free SnOx films. On the other hand, the staggered TFTs with SnOx deposited at a low RF power of 50 W, a low working pressure of 4 mTorr, and an oxygen ratio of 12% exhibited p-type characteristics, which included an onset voltage (Von) of-1.5 V, a saturated hole mobility of 39 cm2/Vs at gate-to-source voltage (VGS) = −10 V, a sub-threshold swing of 1 V/decade at VGS − Von = −0.5 V, and an on/off ratio of 1.1 × 102. We believe that our results can contribute to the development of p-type SnO-based TFTs with good performance.
Charge Transport at High Temperatures in Solution-processed Zinc-tin-oxide Thin-film Transistors
유경민,배병성,정명희,윤의중 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.2
We report charge transport studies at temperatures in the range of 303 − 402 K for solutiondepositedamorphous zinc-tin-oxide (a-ZTO) thin-film transistors (TFTs) operating in the subthresholdregion. The developed TFTs, which had a non-patterned bottom gate and top contactstructure, employed a heavily-doped Si wafer and a SiO2 as a gate electrode and a gate insulatorlayer, respectively. In a-ZTO, the trap activation energy (ETAC) was estimated using the Maxwell-Boltzmann approximation. The decreasing ETAC with increasing gate-voltage-induced sheet carrierdensity (ns) in the a-ZTO channel can be understood as being due to a shift of the Fermi level(EF ) toward the conduction band edge (EC) with increasing gate voltage. Samples with low ns,which exhibited thermally-activated behavior, revealed multiple trap and release phenomena. Insamples with high ns, on the other hand, we observed decreasing mobility/conductivity with increasingtemperature at temperatures higher than 348 K. This suggests that the ETAC can drop tozero, implying a shift of EF beyond EC, where the crossover from the thermal activation to bandtransport is observed. The temperature-dependent characteristics also revealed that the density ofsubgap trap states at EF exhibited thermally-activated behavior with an activation energy of 0.7eV, suggesting that subgap trap states existed near 0.7 eV below the EC.