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A switching speed of CMOS gate is limited by the time taken to charge and discharge the load capacitance and junction capacitance. The time can be approximately expressed by multiplication on-resistance of MOS and capacitance. At the rise and fall conditions the on-resistances are the channel resistances of PMOS and NMOS, respectively. And the total capacitance is mainly drain and gate capacitances. The simple charge and discharge time model is proposed, the SPICE simulation result shows good agreement with the proposed model.
The electrical characteristics of polysilicon Thin Film Transistor(TFT) after negative bais temperature stress are reported. The on-current of polysilicon TFT is related to SRAM cell stability. Therefore, the degraded on-current of polysilicon TFT after stress has a detrimental effect on the cell stability. However, the degradation of electrical characteristics such as Vmim, swing and on-current can be minimized by using si-rich oxide as the IMD. The si-rich oxide can block the moisture penetration from SOG layer into polysilicon TFT, suppress the generation of Si-OHs at the gate oxide and polysilicon finterface. Si-hos are thought to make the interface traps and the positive charges at the oxide during stress therefore mth stability of polysiity of polyciliclan FTF characteristics is remarkably imporved when siirich oxide is used as inter-metal didlectric bevel ,
The focusing mirror design method is proposed in order to obtain the desired power distribution in case of employing a lamp as the heat source. Focusing mirror is designed based on the ray-tracing method and machined by a numerically controlled lathe. The power distribution is measured by charge coupled device. The measurement result shows good agreement with the numerical calculation.
Optical second harmonic generation (SHG) in the form of Cerenkov radiation in thin film waveguide structure was investigated. The copolymer poly(MMA-co-DRIMA) was spin coated on the nonlinear KDP(KH₂PO₄) single crystal and linear pyrex substrate. The second harmonic power strongly depends on waveguiding layer thickness and is the highest when the waveguide structure is the asymmetric nonlinear waveguiding layer-nonlinear substrate counter parallel polarity structure in theoretical analysis. The green(532nm) and blue SHG (440nm) was maximum conversion efficiency was 5.78 ×10-³%. It is good agreement with the experimental results.