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극단적 에너지절감형 초절전 미래 반도체소자 기술 개발 연구
조가람(Karam Cho),고은아(Eunah Ko),김소영(Soyeong Kim),박윤희(Yunhee Park),홍성은(Seongeun Hong),임지현(Jihyun Lim),이유진(Yujin Lee),황윤정(Yun Jeong Hwang),신창환(Changhwan Shin) 대한전자공학회 2016 대한전자공학회 학술대회 Vol.2016 No.11
A negative capacitor is fabricated using poly(vinylidene fluoride-trifluoroethylene) copolymer and connected in series to an a-IZO TFT (amorphous-InZnO thin film transistor). It is experimentally demonstrated that the negative capacitance of the negative capacitor can achieve super steep switching in the a-IZO TFT (i.e., a subthreshold slope from 342 mV/decade to 221 mV/decade (forward voltage sweep) and 209 mV/decade (reverse voltage sweep) at room-temperature.