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PM6:Y6 벌크 이종 접합 물질을 이용한 고민감도 IGZO 광트랜지스터 구현
정진표(Jinpyeo Jeung),고형민(Hyung min Ko),양석주(Seok Joo Yang),박혁(Hyuk Park),서태원(Taewon Seo),김승모(Seung Mo Kim),이병훈(Byoung Hun Lee),조길원(Kilwon Cho),정윤영(Yoonyoung Chung) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.6
By incorporation of PM6:Y6 bulk heterojunction to the IGZO transistor, a hybrid phototransistor with ultrahigh photoresponsivity and specific detectivity is realized in this paper. A comprehensive study on parameters affecting the device performance was conducted, and the parameters were optimized to achieve maximum performance. As a result, our PM6:Y6/IGZO hybrid phototransistor exhibited excellent performance, with an ultrahigh photoresponsivity of 2.2×10<SUP>8</SUP> A W<SUP>-1</SUP> and specific detectivity of 9.8 × 10<SUP>16</SUP> Jones under light intensity at only 1.03 nW cm<SUP>-2</SUP>.