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        • KCI등재

          SiGe을 소스 접합 물질로 사용하는 터널링 전계효과 트랜지스터의 성능 및 짧은 채널 효과 분석

          정영훈(Yunghun Jung),조용범(Yongbeom Cho),강인만(In Man Kang),조성재(Seongjae Cho) 대한전자공학회 2017 전자공학회논문지 Vol.54 No.12

          본 논문에서는 Si 기반의 터널링 전계효과 트랜지스터(tunneling field-effect transistor, TFET)의 낮은 전류 구동 능력을 향상시키기 위해 소스 접합에 Si1-xGex을 적용한 이종접합 기반의 Si1-xGex 터널링 전계효과 트랜지스터의 성능을 분석하고 주어진 소자에서 나타날 수 있는 짧은 채널 효과(short-channel sffects)의 양상을 살펴본다. Ge 함량(x)의 변화에 따른 소스 접합물질의 에너지 밴드갭 변화와 에너지 자리 밀도(density of states)의 변화의 결과로 나타나는 켜진 상태 전류의 변화에 초점을 두어 분석을 수행하였다. 더불어, 향후 10 nm 이하 기술 노드(technology node)에서의 소자 적용 가능성을 확인함과 동시에 짧은 채널에서 나타나는 비이상적인 효과들을 살펴보기 위해 채널 길이(Lch)를 28 nm, 14 nm, 10 nm, 7 nm로 변화시키면서 시뮬레이션을 수행하였다. Lch이 짧아질수록 소스와 드레인 간의 전기장의 겹침으로 채널의 일부 영역에서 인해 펀치스루 (punch-through) 현상이 발행하여 TFET의 스위칭 특성이 열화되는 것을 확인하였다. 나아가, Lch의 변화에 따른 고속 동작특성 변화를 확인하기 위해 fT 및 fmax를 추출하였으며 Lch가 짧아질수록 단조증가하는 경향을 확인하였다. In this paper, we present the device performances of Si1-xGex heterojunction tunneling field-effect transistor (TFET) having Si1-xGex source junction specifically designed for improving the rather low on-state current (Ion) of Si TFET and have a look into the short-channel effects (SCEs) which might take place in the device. The analyses are performed with a focus on the relation between Ge fraction (x) and Ion under the influences of changes in energy bandgap and density of states (DOS) in the Si1-xGex source junction as a function of x. Also, in order to evaluate the possibility of application of the Si1-xGex TFET to the upcoming sub-10-nm technology nodes and the non-ideal effects arising from the extremely short-channel TFETs simultaneously, the device simulations were performed with scaling the channel length: 28 nm, 14 nm, 10 nm, and 7 nm. It is confirmed that the switching characteristics of Si1-xGex TFET are degraded as Lch is shrunken, due to the electric field overlap between source and drain in a part of channel leading to punch-through. Furthermore, in order to investigate the high-speed operation characteristics, fT and fmax were extracted from the devices with different Lch’s and it was verified that those parameters maintained the tendency of increase as Lch gets shorter.

        • KCI등재

          월단위 토양유실가능추정치를 위한 지표피복인자의 산정 방안 연구

          성윤수,정영훈,임경재,김종건,김기성,박승기,신민환,금동혁,박윤식,Sung, Yun Soo,Jung, Yunghun,Lim, Kyoung Jae,Kim, Jonggun,Kim, Ki-Sung,Park, Seung Ki,Shin, Min Hwan,Kum, Dong Hyuk,Park, Youn Shik 한국농공학회 2016 한국농공학회논문집 Vol.58 No.6

          Soil loss is an accompanying phenomenon of hydrologic cycle in watersheds. Both rainfall drops and runoff lead to soil particle detachment, the detached soil particles are transported into streams by runoff. Here, a sediment-laden water problem can be issued if soil particles are severely detached and transported into stream in the watershed. There is a need to estimate or simulate soil erosion in watersheds so that an adequate plan to manage soil erosion can be established. Universal Soil Loss Equation (USLE), therefore, was developed and modified by many researchers for their watersheds, moreover the simple model, USLE, has been employed in many hydrologic models for soil erosion simulations. While the USLE has been applied even in South-Korea, the model is often regarded as being limited in applications for the watersheds in South-Korea since monthly conditions against soil erosion on soil surface are not capable to represent. Thus, the monthly USLE factors against soil erosion, soil erodibility and crop management factors, were established for four major watersheds, which are Daecheong-dam, Soyang-dam, Juam-dam, and Imha-dam watersheds. The monthly factors were established by recent fifteen years from 2000 to 2015. Five crops were selected for the monthly crop management factor establishments. Soil loss estimations with the modified factors were compared to conventional approach that is average annual estimations. The differences ranged from 9.3 % (Juam-dam watershed) to 28.1 % (Daecheong-dam watershed), since the conventional approaches were not capable of seasonally and regionally different conditions.

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