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        N - 형 WO3 계 가스센서의 전기적 특성

        양종인,김일진,임한조,한상도,정관수 ( Jong In Yang,Il Jin Kim,Han Jo Lim,Sang Do Han,Kwan Soo Chung ) 한국센서학회 1998 센서학회지 Vol.7 No.3

        The sensing and electrical characteristics of WO₃-based n-type semiconductor gas sensors are investigated. In normal air condition, TiO₂(4 wt.%)-doped WO₃-based sensor fabricated without any binder shows the grain boundary (GB) potential barrier height of 0.26 V. Sensors fabricated with alumina, PVA and silica sol binders show 0.17, 0.22 and 0.26 V of GB potential barrier height, respective In the ambience of 120 ppm NO_x concentration, the GB potential barrier height of the sensor fabricated without binder is increased to 0.59. The sensors were fabricated with alumina, PVA, silica sol binders show 0.43. 0.66 and 0.52 V of potential barrier, respectively. Thus the variation of the potential barrier at GB is largest in the sensor fabricated with the PVA binder. This is found to be the main reason why the sensor fabricated with the PVA binder shows the best sensitivity. It is also found that the decrease of sensitivity at a temperature higher than the optimum operation temperature is due to the temperature dependence of the sensor resistance in normal air condition rather than the desorption of the adsorbed NO_x, gas particles. In the ambience of 250 ppm CO concentration, the GB potential barrier heights of the sensors fabricated without binder and with PA binder are about 0.2 V showing negligible change compared to the case of normal air ambience. This fact indicates that these sensors are good candidates for the selective detection of NO_x, gas in the mixture of CO and NO_x gases.

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