http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
[Co / Fe / Cu]20 다층박막의 자기저항 특성
이장로(Jang-Roh Rhee) 한국자기학회 1996 韓國磁氣學會誌 Vol.6 No.6
We have studied the effect of a spin-dependence interface electron scattering on the giant magnetoresistance by adding a Fe magnetic material to the Co/Cu interfaces. The Fe(50 Å)/[Co(17 Å)/Fe(t Å)/Cu(24 Å)]_(20) multilayers are deposited on the Corning glass 2948 and 7059 substrates in a dc magnetron sputtering system. The magnetoresistance ratio is 22 % in the only Co/Cu multilayer, while it is increased to 26 % with inserted ultra thin Fe interface layer and reduced with increasing thickness of the Fe interface layer. It was investigated to the dependence of the magnetoresistance behaviors on annealing temperature. The magnetic properties of the multilayers were measured by vibrating sample magnetometer. Also, the structures and the surface roughness of samples were characterized by X-ray diffraction and atomic force microscope, respectively. The magnetoresistance ratio was increased to annealing temperature 300 ℃, but reduced at the temperature higher than 300 ℃ due to the interfacial diffuse.
최종구(Jong-Gu Choi),황도근(Do-Guwn Hwang),이상석(Sang-Suk Lee),이장로(Jang-Roh Rhee) 한국자기학회 2009 韓國磁氣學會誌 Vol.19 No.4
The soft magnetic property for the Corning glass/Ta(5 ㎚)/[Conetic, Permalloy)/Ta(3 ㎚) prepared by the ion beam deposition sputtering was investigated. The coercivity and saturation magnetic field of conetic (NiFeCuMo) and permalloy (NiFe) layer with easy and hard direction along to the applying magnetic field during deposition was compared with each other. The surface resistance of conetic film with a thickness of 10 ㎚ was 2 times lower than one of permalloy film. The coercivity and the magnetic susceptibility of conetic film decreased and increased 3 times to one of permalloy film, respectively. These results suggest that a highly sensitive GMRSV or MTJ using conetic film can be possible to develop the bio-device.
자성박막 소자 에칭용 전자 사이클로트론 공명 이온밀링 시스템 제작과 특성연구
이원형(Won-Hyung Lee),황도근(Do-Guwn Hwang),이상석(Sang-Suk Lee),이장로(Jang-Roh Rhee) 한국자기학회 2015 韓國磁氣學會誌 Vol.25 No.5
The ECR (Electron Cyclotron Resonance) Ar ion milling was manufactured to fabricate the device of thin film. The ECR ion milling system applied to the device etching operated by a power of 600W, a frequency of 2.45 GHz, and a wavelength of 12.24 cm and transferred by a designed waveguide. In order to match one resonant frequency, a magnetic field of 908 G was applied to a cavity inside of ECR. The Ar gas intruded into a cavity and created the discharged ion beam. The surface of target material was etched by the ion beam having an acceleration voltage of 1000 V. The formed devices with a width of 1 μm~9 μm on the GMR-SV (Giant magnetoresistance-spin valve) multilayer after three major processes such as photo lithography, ion milling, and electrode fabrication were observed by the optical microscope.
[CoFe/Pt/CoFe]/IrMn 다층박막의 수직자기 이방성 각도에 따른 상호교환결합력 특성
이상석(Sang-Suk Lee),최종구(Jong-Gu Choi),황도근(Do-Guwn Hwang),이장로(Jang-Roh Rhee) 한국자기학회 2008 韓國磁氣學會誌 Vol.18 No.6
Dependence of interlayer exchange coupling on antiferromagnetic IrMn thickness, thermal stability, and parallel anisotropy angle in perpendicular anisotropy [CoFe/Pt/CoFe]/IrMn multilayers was investigated. The magnetic property of [CoFe(10 A)/Pt(8 A)/CoFe(10 A)] induced by antiferromagnetic ordering of IrMn layer was maintained a stable perpendicular anisotropy up to 250 ℃ and from 7 A to 160 A of IrMn thickness. The value of interlayer exchange coupling of [CoFe/Pt/CoFe]/IrMn multilayers with perpendicular anisotropy increased to 1.5 times at anisotropy angle of 60° more than of 0°. On the other side, the interlayer exchange coupling at anisotropy angle of 90o was ∞ Oe, it was likely diverted to a parallel shape magnetization.
이용호(Yong-Ho Lee),신용돌(Yong-Dol Shin),이영희(Young-Hee Lee),이장로(Jang-Roh Rhee) 한국자기학회 1993 韓國磁氣學會誌 Vol.3 No.2
A pulsed electromagnet with silicon steel core driven by alternating current or oscillatory decaying current using capacitor discharging method for measuring magnetic hysteresis loops, magnetostriction and magnetic anisotropy of high coercivity magnetic sample is built. The general formuli for various characteristics of the electromagnet with given geometry of iron core and turns of copper wire are presented. Using these formuli, an electromagnet with 46 ㎜ × 32㎜ of core's cross section and 28㎜ of air-gap is designed and built, its magnetic field to current ratio of 20 mT / A is linear up to 0.49 T. Combining this electromagnet with an analog integrated fluxmeter, a magnetic hysteresis loop can be easily displayed major and minor loops of thin film or strip at once.
Ni53 - Fe47 자성박막의 신형전류자기 기전력효과
정한(Han Jung),손희영(Hee-Young Son),김미양(Mee-Yang Kim),장현숙(Hyun-Suk Jang),이장로(Jang-Roh Rhee),이용호(Yong-Ho Lee) 한국자기학회 1994 韓國磁氣學會誌 Vol.4 No.3
A new Galvanomagnetic electromotive force effect of Ni_(53) - Fe_(47) thin films is studied. The dependence of this effect on θ, angle between the current and the magnetic field, is found to be the form of sin 2θ, in contrast with that of the magnetoresistance effect cos 2θ and that of the Hall effect sin θ. Property of this effect is that 1the rate of the voltage variation depending on the magnetic field is extremely large as compared with the magnetiresistance effect. It is theoretically confirmed that this effect is well understood on the basis of the two carrier types model.
CoFe/Cu/CoFe/PtMn 다층박막의 자기저항 곡선을 이용한 자기 등방성 특성 분석
최종구(Jong-Gu Choi),김수희(Su-Hee Kim),최상헌(Sang-Heon Choi),이상석(Sang-Suk Lee),이장로(Jang-Roh Rhee) 한국자기학회 2017 韓國磁氣學會誌 Vol.27 No.4
The magnetic isotropy property from the magnetoresistance (MR) curve and magnetization (MH) loop for the PtMn based spin valve (SV) multilayer films fabricated with different the bottom structure after post-annealing treatment was investigated. The exchange biased coupling field (H<SUB>ex</SUB>), coercivity (H<SUB>c</SUB>), and MR ratio of Glass/Ta(10 ㎚)/CoFe(6 ㎚)/Cu(2.5 ㎚)/CoFe(3 ㎚)/Ta(4 ㎚) SV multilayer film without antiferromagnetic PtMn layer are 0 Oe, 25 Oe, and 3.3 %, respectively. MR curve for the Glass/Ta(10 ㎚)/CoFe(6 ㎚)/Cu(2.5 ㎚)/CoFe(3 ㎚)/PtMn(6 ㎚)/Ta(4 ㎚) SV multilayer film showed H<SUB>ex</SUB> = 2 Oe, H<SUB>c</SUB> = 316 Oe, and MR (%) = 4.4 % with one butterfly MR curve having by the effect of antiferromagnetic PtMn layer. MR curve for the dualtype Glass/Ta(10 ㎚)/CoFe(6 ㎚)/Cu(2.5 ㎚)/CoFe(3 ㎚)/PtMn(6 ㎚)/CoFe(3 ㎚)/Cu(2.5 ㎚)/CoFe(6 ㎚)/Ta(4 ㎚) SV multilayer film showed H<SUB>c</SUB> = 37.5 Oe and 386 Oe, MR = 3.5 % and 6.5 % with two butterfly MR curves and square-like hysteresis MH loops. The anisotropy property in CoFe spin valve-PtMn multilayer is neglected by the effects of a very small value of H<SUB>ex</SUB> and a very slightly shape magnetic anisotropy. This result is possible to explain the effect of magnetization configuration spin array of the bottom SV film and the top SV film of PtMn layer.
GMR-SV 박막내 미크론 크기의 홀 형성을 이용한 교환결합세기와 보자력 특성연구
벌러르마(Munkhbat Bolormaa),카지드마(Purevdorj Khajidmaa),황도근(Do-Guwn Hwang),이상석(Sang-Suk Lee),이원형(Won-Hyung Lee),이장로(Jang-Roh Rhee) 한국자기학회 2015 韓國磁氣學會誌 Vol.25 No.4
The holes with a diameter of 35 μm inside the GMR-SV (giant magnetoresistance-spin valve) film were patterned by using the photolithography process and ECR (electron cyclotron resonance) Ar-ion milling. From the magnetoresistance curves of the GMR-SV film with holes measuring by 4-electrode method, the MR (magnetoresistance ratio) and MS (magnetic sensitivity) are almost same as the values of initial states. On other side hand, the H<SUB>ex</SUB> (exchange bias coupling field) and H<SUB>c</SUB> (coercivity) dominantly increased from 120 Oe and 10 Oe to 190 Oe and 41 Oe as increment of the number of holes inside GMR-SV film respectively. These results were shown to be attributed to major effect of EMD (easy magnetic domian) having a region positioned between two holes perpendicular to the sensing current. On the basis of this study, the fabrication of GMR-SV applying to the hole formation improved the magnetoresistance properties having the thermal stability and durability of bio-device.