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GMR-SV 박막내 미크론 크기의 홀 형성을 이용한 교환결합세기와 보자력 특성연구
벌러르마(Munkhbat Bolormaa),카지드마(Purevdorj Khajidmaa),황도근(Do-Guwn Hwang),이상석(Sang-Suk Lee),이원형(Won-Hyung Lee),이장로(Jang-Roh Rhee) 한국자기학회 2015 韓國磁氣學會誌 Vol.25 No.4
The holes with a diameter of 35 μm inside the GMR-SV (giant magnetoresistance-spin valve) film were patterned by using the photolithography process and ECR (electron cyclotron resonance) Ar-ion milling. From the magnetoresistance curves of the GMR-SV film with holes measuring by 4-electrode method, the MR (magnetoresistance ratio) and MS (magnetic sensitivity) are almost same as the values of initial states. On other side hand, the H<SUB>ex</SUB> (exchange bias coupling field) and H<SUB>c</SUB> (coercivity) dominantly increased from 120 Oe and 10 Oe to 190 Oe and 41 Oe as increment of the number of holes inside GMR-SV film respectively. These results were shown to be attributed to major effect of EMD (easy magnetic domian) having a region positioned between two holes perpendicular to the sensing current. On the basis of this study, the fabrication of GMR-SV applying to the hole formation improved the magnetoresistance properties having the thermal stability and durability of bio-device.