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CVD 방법으로 성장시킨 MoS₂ 스핀 밸브의 자성-수송 특성
전병선(Byong Sun Chun) 한국자기학회 2017 韓國磁氣學會誌 Vol.27 No.5
We have investigated magneto-transport properties in a MoS₂ lateral spin-valve structures for different ferromagnetic CoFe electrode shapes and MoS₂ channel lengths. For these devices, high quality and large-scale MoS₂ thin films were synthesized through sulfurization of epitaxial MoO₃ films and these sulfurized-MoO₃ thin films properties are in good agreements with measurements on exfoliated MoS₂ film. Magneto-transport measurements show a clear rectangular magnetoresistance signal of 0.16% and a spin polarization of 0.00012%. By using the one-dimensional spin diffusion equation, we extracted the spin diffusion length and coefficient, finding them to be 12 ㎚ and 1.44 × 10<SUP>−3</SUP> ㎠/s, respectively. These small values of magnetoresistance and spin polarization could be enhanced by appeasement of conductivity mismatch between the ferromagnet and semiconductor interface.
전병선(Byong Sun Chun),김영근(Young Keun Kim) 한국자기학회 2006 韓國磁氣學會誌 Vol.16 No.3
Ferromagnetic amorphous Ni₁?Fe?₂Si?B₁₄ and Co<SUB>70.5</SUB>Fe<SUB>4.5</SUB>Si₁?B₁? layers have been devised and incorporated as free layers of magnetic tunnel junctions (MTJs) to improve MRAM reading and writing performance. The NiFeSiB and CoFeSiB single-layer film exhibited a lower saturation magnetization (M<SUB>s</SUB> = 800 emu/㎤, and 560 emu/㎤, respectively) compared to that of a Co??Fe₁?0 (M<SUB>s</SUB> = 1400 emu/㎤). Because amorphous ferromagnetic materials have lower M<SUB>s</SUB> than crystalline ones, the MTJs incorporating amorphous ferromagnetic materials offer lower switching field (H<SUB>sw</SUB>) values than that of the traditional CoFe-based MTJ. The double-barrier MTJ with an amorphous NiFeSiB free layer offered smooth surface resulting in low bias voltage dependence, and high V<SUB>h</SUB> and V<SUB>bd</SUB> compared with the values of the traditional CoFe-based MTJ.
추인창(In Chang Chu),전병선(Byong Sun Chun),송민성(Min Sung Song),이성래(Seong Rae Lee),김영근(Young Keun Kim) 한국자기학회 2006 韓國磁氣學會誌 Vol.16 No.2
The tunneling magnetoresistance (TMR) ratios of magnetic tunnel junctions (MTJs), in general, decrease abruptly above 250℃ due to Mn interdiffusion from an antiferromagnet IrMn layer to a ferromagnetic CoFe and/or a tunnel barrier. To improve thermal stability, we prepared MTJs with nano-oxide layers. Using a MTJ structure consisting of underlayer CoNbZr 4/bufferlayer CoFe 10/ antiferromaget IrMn 7.5/pinned layer CoFe 3/tunnel barrier AlO/freelayer CoFe 3/capping CoNbZr 2 (㎚), we placed a nano-oxide layer (NOL) into the underlayer or bufferlayer. Then, the thermal, structural and magneto-electric properties were measured. The TMR ratio, surface flatness, and thermal stability of the MTJs with NOLs were promoted.