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다결정 3C-SiC/TiW Ohmic Contact에 관한 연구
온창민(Chang-Min On),정귀상(Gwiy-Sang Chung) 대한전기학회 2006 대한전기학회 학술대회 논문집 Vol.2006 No.7
This paper describes the ohmic contact formation between a TiW film as a contact material deposied by RF magnetron sputter and polycrystalline 3C-SiC films deposied on thermally grown Si wafers. The specific contact resistance (Pc) of the TiW contact was measured by using the C-TLM. The contact phase and interfacial reaction between TiW and 3C-SiC at high-temperature were also analyzed by XRD and SEM. All of the samples didn't show cracks of the TiW film and any interfacial reaction after annealing. Especially. when the sample was annealed at 800° for 30min., the lowest contact resistivity of 2.90×10??Ω · ㎠ was obtained due to the improved interfacial adhesion.
극한 환경 MEMS용 옴익 접촉을 위한 다결정 3C-SiC 박막의 표면 처리 효과
정귀상,온창민,Chung, Gwiy-Sang,Ohn, Chang-Min 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.3
This paper describes the TiW ohmic contact characteristics under the surface treatment of the polycrystalline 3C-SiC thin film grown on $SiO_2/Si(100)$ wafers by APCVD. The poly 3C-SiC surface was polished by using CMP(chemical mechanical polishing) process and then oxidized by wet-oxidation process, and finally removed SiC oxide layers. A TiW thin film as a metalization process was deposited on the surface treated poly 3C-SiC layer and was annealed through a RTA(rapid thermal annealing) process. TiW/poly 3C-SiC was investigated to get mechanical, physical, and electrical characteristics using SEM, XRD, XPS, AFM, optical microscope, I-V characteristic, and four-point probe, respectively. Contact resistivity of the surface treated 3C-SiC was measured as the lowest $1.2{\times}10^{-5}{\Omega}cm^2$ at $900^{\circ}C$ for 45 sec. Therefore, the surface treatments of poly 3C-SiC are necessary to get better contact resistance for extreme environment MEMS applications.