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플라즈마 용사법에 의한 Cr2O3 용사층의 어닐링처리와 가압열처리 특성에 관한 연구
오익현,김수식,김한삼 대한금속재료학회(대한금속학회) 1995 대한금속·재료학회지 Vol.33 No.3
As an effort to improve the mechanical properties, the Cr₂O₃ coatings formed on SM45C substrates by the plasma spraying were subjected to annealing or hot press treatment. After each treatment, mechanical properties such as microhardness, abrasion and bond strength of annealed or hot pressed coatings were compared with the as-sprayed coatings. In case of annealing treatment, as the annealing temperature increased, the porosity decreased. Microhardness and abrasion characteristics were also improved upon annealing. In particular, abrasion characteristics of Cr₂O₃ coatings annealed at 1100℃ were improved 5 times as high as the as-sprayed coating. In case of hot pressing treatment, the increase of temperature and pressure leaded to the improvement of porosity, microhardness and abrasion characteristics of the coatings. The best experimental results were obtained at 900℃ and 30MPa. Specifically, at this condition, the porosity was as low as 4.1% and abrasion characteristics were improved 8 times as good as the as-sprayed coating. Bond strength which was not improved by only annealing or hot press treatment was improved by incorporating the Functional Gradient Layer(FGL). Annealing after forming FGL produced about 14MPa higher bond strength than annealing without FGL, and hot press treatment with FGL showed even better results.
오익현,장준호,양준모,손인진,임재원,박현국 한양대학교 세라믹연구소 2016 Journal of Ceramic Processing Research Vol.17 No.3
Al-Si-Cu alloy targets were fabricated using the spark plasma sintering (SPS) process for sputtering target applications. Powder for sintering of the Al-Si-Cu alloy compacts was prepared using the gas atomizing process. For fabricating the Al-SiCualloy compacts, optimized sintering conditions such as temperature, pulse ratio, pressure, and heating rate were controlledduring the sintering process. Al-Si-Cu alloy sputtering target materials after sintering using gas atomized powder were200 mm in diameter and 6.35 mm in thickness. In addition, the SPSed sputtering targets and thin films were compared withthose of a commercial target fabricated using the casting melting process. The sputtering targets materials having a relativedensity of 100% were fabricated under the uniaxial pressure range of 40 ~ 60 MPa at a sintering temperature of 400 oC. Grainsize of the SPSed target materials decreased with increasing of sintering pressure at the same temperature of 400 oC. Also, thepurity of the SPSed target materials was 99.992%. The properties of thin films deposited on a Si substrate using the SPSedtarget materials were compared with those of the commercial target material prepared using the casting melting process. Fromthe results, the specific resistivity of thin film deposited using the SPSed target material was 4.4 μΩm, which was a similarvalue (4.5 μΩm) to that of the commercial thin film.