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박막트랜지스터 응용을 위한 SiO<sub>2</sub> 박막 특성 연구
서창기,심명석,이준신,Seo, Chang-Ki,Shim, Myung-Suk,Yi, Junsin 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.6
Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.
박막소자응용을 위한 Mo 기판 위에 고온결정화된 poly-Si 박막연구
김도영,서창기,심명석,김치형,이준신 한국진공학회 2003 Applied Science and Convergence Technology Vol.12 No.2
최근, poly-Si 박막은 저가의 박막소자응용을 위하여 사용되어 왔다. 그러나, 유리기판 위에서 일반적인 고상결정화(SPC) 방식으로 poly-Si 박막을 얻기는 불가능하다. 이러한 단점 때문에 유리와 같은 저가기판 위에 poly-Si을 결정화하는 연구가 최근 다양하게 진행되고 있다. 본 논문에서는 급속열처리(RTA)를 이용하여 유연한 기판인 몰리브덴 기판 위에서 a-Si:H를 성장시킨 후 고온결정화에 대한 연구를 진행하였다 고온결정화된 poly-Si 박막은 150$\mu\textrm{m}$ 두께의 몰리브덴 기판 위에 성장되었으며 결정화 온도는 고 진공하에서 $750^{\circ}C$~$1050^{\circ}C$ 사이에서 결정화된 시료에 대하여 결정화도, 결정화 면방향, 표면구조 및 전기적 특성이 조사되었다. 결정화온도 $1050^{\circ}C$에서 3분간 결정화된 시료의 결정화도는 92%를 나타내고 있었다. 결정화된 poly-Si 박막으로 제작된 TFT 소자로부터 전계효과 이동도 67 $\textrm{cm}^2$/Vs을 얻을 수 있었다. Polycrystalline silicon thin films have been used for low cost thin film device application. However, it was very difficult to fabricate high performance poly-Si at a temperature lower than $600^{\circ}C$ for glass substrate because the crystallization process technologies like conventional solid phase crystallization (SPC) require the number of high temperature (600-$1000^{\circ}C$) process. The objective of this paper is to grow poly-Si on flexible substrate using a rapid thermal crystallization (RTC) of amorphous silicon (a-Si) layer and make the high temperature process possible on molybdenum substrate. For the high temperature poly-Si growth, we deposited the a-Si film on the molybdenum sheet having a thickness of 150 $\mu\textrm{m}$ as flexible and low cost substrate. For crystallization, the heat treatment was performed in a RTA system. The experimental results show the grain size larger than 0.5 $\mu\textrm{m}$ and conductivity of $10^{-5}$ S/cm. The a-Si was crystallized at $1050^{\circ}C$ within 3min and improved crystal volume fraction of 92 % by RTA. We have successfully achieved a field effect mobility over 67 $\textrm{cm}^2$/Vs.
박막트랜지스터 응용을 위한 고온 결정화된 다결정실리콘의 특성평가
김도영,심담석,서창기,이준신 대한전기학회 2004 전기학회논문지C Vol.53 No.5(C)
Amorphous silicon (a-Si) films are used in a broad range of solar cell, flat panel display, and sensor. Because of the greater ease of deposition and lower processing temperature, thin films are widely used for thin film transistors (TFTs). However, they have lower stability under the exposure of visible light and because of their low field effect mobility (μFE), less than 1 cm2/Vs, they require a driving IC in the external circuits. On the other hand, polycrystalline silicon (poly-Si) thin films have superiority in μFE and optical stability in comparison to a-Si film. Many researches have been done to obtain high performance poly-Si because conventional methods such as excimer laser annealing, solid phase crystallization and metal induced crystallization have several difficulties to crystallize. In this paper, a new crystallization process using a molybdenum substrate has been proposed. As we use a flexible substrate, high temperature treatment and roll-to-roll process are possible. We have used a high temperature process above 750 ℃ to obtain poly-Si films on molybdenum substrates by a rapid thermal annealing (RTA) of the amorphous silicon (a-Si) layers. The properties of high temperature crystallized poly-Si studied, and poly-Si has been used for the fabrication of TFT. By this method, we are able to achieve high crystal volume fraction as well as high field effect mobility.