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플라즈마 화학증착법에서 증착변수가 TiN 증착에 미치는 영향(III) -r.f. power 및 전극간 거리를 중심으로-
김충환,신영식,김문일,Kim, C.H.,Shin, Y.S.,Kim, M.I. 한국열처리공학회 1990 熱處理工學會誌 Vol.3 No.1
To investigate the influence of r.f. power and electrode distance on the TiN deposition, TiN films were deposited onto STC3, STD11 steel and Si-wafer from gas mixtures of $TiC_4/N_2/H_2$ using the radio frequency plasma assisted chemical vapor deposition. The crystallinity of TiN film could be improved by the increase of r.f. power and the decrease of electrode distance. The TiN coated layer contains chlorine, its content were decreased with increasing r.f. power as well as decreasing electrode distance. And the thickness of deposited TiN was largely affected by r.f. power and electrode distance. The hardness of deposited TiN reached a maximum value of about Hv 2,000.