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UV/O<sub>2</sub> 가스상 세정을 이용한 실리콘 웨이퍼상의 PEG 반응기구의 관찰
권성구,김도현,김기동,이승헌,Kwon, Sung-Ku,Kim, Do-Hyun,Kim, Ki-Dong,Lee, Seung-Heun 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.11
An experiment to find out the removal mechanism of PEG(polyethyleneglycol) by using UV-enhanced $O_2$ GPC (gas phase cleaning) at low substrate temperature below $200^{\circ}C$ was executed under various process conditions, such as substrate temperature, UV exposure, and $O_2$ gas. The possibility of using $UV/O_2$ GPC as a low-temperature in-situ cleaning tool for organic removal was confirmed by the removal of a PEG film with a thickness of about 200 nm within 150 sec at a substrate temperature of $200^{\circ}C$. Synergistic effects by combining photo-dissociation and photo oxidation can only remove the entire PEG film without residues within experimental splits. In $UV/O_2$ GPC with substrate temperatures higher than the glass transition temperature, the substantial increase in the PEG removal rate can be explained by surface-wave formation. The photo-dissociation of PEG film by UV exposure results in the formation of end aldehyde by dissociation of back-bone chain and direct decomposition of light molecules. The role of oxygen is forming peroxide radicals and/or terminating the dis-proportionation reaction by forming peroxide.