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지식베이스로부터 자연어 문장 생성을 위한 노이즈 추가 기법
권성구,박세영 한국정보과학회 2020 정보과학회논문지 Vol.47 No.10
지식베이스로부터 자연어 문장 생성이란 지식베이스 내 트리플을 입력하여 트리플이 내포하고 있는 정보, 즉 개체와 각 개체간의 관계를 포함하고 있는 자연어 문장을 생성하는 작업이다. 해당 작업을 심층신경망 방식으로 해결하기 위해서는 많은 트리플과 자연어 문장 쌍으로 구성된 학습데이터가 필요하다. 하지만 이와 같은 공개 된 한국어 학습데이터는 존재하지 않기 때문에 학습에 어려움을 겪고 있다. 본 논문에서는 이러한 학습 데이터 부족 문제를 해결하기 위하여 한국어 위키피디아 문장 데이터를 기반으로 핵심어를 추출한 뒤, 노이즈 추가 기법을 이용해 학습 데이터를 생성하는 비지도 학습 방법을 제안한다. 제안 모델을 평가하기 위하여 사람이 직접 제작한 트리플과 자연어 문장 쌍 정답 데이터를 이용하여 평가를 수행하였다. 자동 평가와 수동 평가 결과, 노이즈 추가 기법을 이용한 자연어 문장 생성 모델이 기존 비지도 학습 데이터를 이용한 모델보다 여러 측면에서 높은 성능을 보였다. Generating a natural language sentence from Knowledge base is an operation of entering a triple in the Knowledge base to generate triple information, which is a natural language sentence containing the relationship between the entities. To solve the task of generating sentences from triples using a deep neural network, learning data consisting of many pairs of triples and natural language sentences are required. However, it is difficult to learn the model because the learning data composed in Korean is not yet released. To solve the deficiency of learning data, this paper proposes an unsupervised learning method that extracts keywords based on Korean Wikipedia sentence data and generates learning data using a noise injection technique. To evaluate the proposed method, we used gold-standard dataset produced by triples and sentence pairs. Consequently, the proposed noise injection method showed superior performances over normal unsupervised learning on various evaluation metrics including automatic and human evaluations.
Effect of Process Parameters on Remote PEALD for Highly Transparent ZnO Film Growth
권성구,김대운,정용호,이봉주 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.3
In this paper, remote very-high-frequency (VHF) inductively-coupled-plasma (ICP)-enhanced atomic layer deposition (ALD) was used for growing highly transparent ZnO film with diethyl zinc (DEZn) and H2O as reactant sources on Si(100) single crystal and quartz substrate. The optical transparency and the crystallinity of the ZnO thin films grown under various process conditions such as substrate temperature and ICP power were characterized to investigate the possibility of using remote VHF ICP ALD for TCO film fabrication as a tool competitive with other tools. An undoped-ZnO film with an average transmittance of higher than 90% within the visible region and with favorable electrical properties was prepared for substrate temperatures from 15 ˚C to 250 ˚C and ICP powers from 100 W to 300 W. In this paper, remote very-high-frequency (VHF) inductively-coupled-plasma (ICP)-enhanced atomic layer deposition (ALD) was used for growing highly transparent ZnO film with diethyl zinc (DEZn) and H2O as reactant sources on Si(100) single crystal and quartz substrate. The optical transparency and the crystallinity of the ZnO thin films grown under various process conditions such as substrate temperature and ICP power were characterized to investigate the possibility of using remote VHF ICP ALD for TCO film fabrication as a tool competitive with other tools. An undoped-ZnO film with an average transmittance of higher than 90% within the visible region and with favorable electrical properties was prepared for substrate temperatures from 15 ˚C to 250 ˚C and ICP powers from 100 W to 300 W.
고주파유도결합플라즈마 반응기에서 물로부터 수소생성효율을 높이기 위한 공정변수에 대한 연구
권성구,정용호 한국수소및신에너지학회 2011 한국수소 및 신에너지학회논문집 Vol.22 No.2
The effect of process parameters on H2 production from water vapor excited by HF ICP has been qualitatively examined for the first time. With the increase of ICP power, characteristics of H_2 production from H_2O dissociation in plasma was divided into 3 regions according to both reaction mechanism and energy efficiency. At the edge of region (II) in the range of middle ICP power, energy effective hydrogen production from H_2O plasma can be achieved. Furthermore, within the region (II) power condition, heating of substrate up to 500℃ shows additional increase of 70∼80% in H_2 production compared to H_2O plasma without substrate heating. This study have shown that combination of optimal plasma power (region II) and wall heating (around 500℃) is one of effective ways for H_2 production from H_2O.
권성구,김도현 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.4
An experiment to remove PEG (polyethyleneglycol) by using UV-enhanced O2 GPC (gas-phase cleaning) at low substrate temperatures below 200 C was executed under various process conditions, such as substrate temperature, pressures and UV exposure. The possibility of using UV/O2 GPC as a low-temperature in-situ cleaning tool for organic removal was confirmed by the removal of a PEG film with a thickness of about 200 nm within 150 seconds at a substrate temperature of 200 C. In UV/O2 GPC with substrate temperatures higher than the glass transition temperature, the substantial increase in the PEG removal rate can be explained by surface-wave formation. The optimal pressure condition can be understood by considering a partitioning of the UV energy between the gas phase and the organic film on the substrate. In the present work, the optimal pressure was determined to be 5 Torr by observing the spectra and the ratio (C-O+C=O)/(C-H) in the PEG film.
UV/O<sub>2</sub> 가스상 세정을 이용한 실리콘 웨이퍼상의 PEG 반응기구의 관찰
권성구,김도현,김기동,이승헌,Kwon, Sung-Ku,Kim, Do-Hyun,Kim, Ki-Dong,Lee, Seung-Heun 한국전기전자재료학회 2006 전기전자재료학회논문지 Vol.19 No.11
An experiment to find out the removal mechanism of PEG(polyethyleneglycol) by using UV-enhanced $O_2$ GPC (gas phase cleaning) at low substrate temperature below $200^{\circ}C$ was executed under various process conditions, such as substrate temperature, UV exposure, and $O_2$ gas. The possibility of using $UV/O_2$ GPC as a low-temperature in-situ cleaning tool for organic removal was confirmed by the removal of a PEG film with a thickness of about 200 nm within 150 sec at a substrate temperature of $200^{\circ}C$. Synergistic effects by combining photo-dissociation and photo oxidation can only remove the entire PEG film without residues within experimental splits. In $UV/O_2$ GPC with substrate temperatures higher than the glass transition temperature, the substantial increase in the PEG removal rate can be explained by surface-wave formation. The photo-dissociation of PEG film by UV exposure results in the formation of end aldehyde by dissociation of back-bone chain and direct decomposition of light molecules. The role of oxygen is forming peroxide radicals and/or terminating the dis-proportionation reaction by forming peroxide.