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        뜨거운 곁쌓기 법에 의해 성장된 MgGa2Se4 단결정 박막의 열처리 효과

        방진주 ( Jin Ju Bang ),김혜정 ( Hye Jeong Kim ),박향숙 ( Hwang Seuk Park ),강종욱 ( Jong Wuk Kang ),홍광준 ( Kwang Joon Hong ) 한국센서학회 2014 센서학회지 Vol.23 No.1

        The evaporating materials for MgGa2Se4 single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, MgGa2Se4 compounded polycrystal powder was deposited on thoroughly etched semi-insulated GaAs(100) substrate by the hot wall epitaxy (HWE) method system. The source and substrate temperatures of optimized growth conditions, were 610oC and 400oC, respectively.The source and substrate temperatures were 610oC and 400oC, respectively. The crystalline structure of the single crystal thin films was investigated by double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the MgGa2Se4 obtained from the absorption spectra was well described by the Varshni`s relation, Eg(T) = 2.34 eV(8.81 10-4 eV/ K)T2/(T+251 K). After the as-grown MgGa2Se4 single crystal thin films was annealed in Mg-, Se-, and Ga-atmospheres, the origin of point defects of MgGa2Se4 single crystal thin films has been investigated by the photoluminescence (PL) at 10 K. The native defects of VMg, VSe obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted MgGa2Se4 single crystal thin films to an optical n-type. Also, we confirmed that Ga in MgGa2Se4/GaAs did not form the native defects because Ga in MgGa2Se4 single crystal thin films existed in the form of stable bonds.

      • Mechanical Alloying에 의한 Ti_xCu_90-xAl_10(x=50,60)의 비정질화 및 열적성질

        강종욱,김현구,김혜숙,이상열 조선대학교 기초과학연구소 1996 自然科學硏究 Vol.19 No.1

        Amorphous powders of the Ti_xCu_(90-x)Al_10(x=50,60) system were synthesized by mechanical alloying method under an argon atmosphere. The amorphization process of the Ti_xCu_(90-x)Al_10(x=50,60) powders after milling by MA were studied by XRD, SEM and DSC experiments. We found that the best milling conditions of the Ti_xCu_(90-x)Al_10(x=50,60) powders were a ball-to powder weight ratio of 15 : 1 and a revolving velocity of 250rev min^-1 in this experiment. XRD patterns of the Ti_xCu_(90-x)Al_10(x=50,60) powders obtained by MA showed broad peaks as the increasing of milling times of the powders. So we confirmed the amorphization of the powders. The position of peak intensity 2θ(max.) of amorphous powders decreased nearly linearly with the increase of titanium concentration. Average particle size of the Ti_xCu_(90-x)Al_10(x=50,60) powders were 20∼26㎛ from SEM micrograph. In the DSC experiment, crystallization temperature and peak temperature were observed to increase for the Ti_xCu_(90-x)Al_10(x=50,60) powders with increased titanium concentration. The activation energy of the Ti_50Cu_40Al_10 and Ti_60Cu_30Al_10 powders were 260.57 and 253.10KJ/mole, respectively. the crystallization fraction of the Ti_50Cu_40Al_10 and Ti_60Cu_30Al_10 powders were found to be 3.02% at 458℃ and 1.32% at 477.2℃.

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