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열처리에 의한 비정질 산화물 반도체 InGaZnO₄ 박막의 전기적 특성 변화 연구
배성환(Sung-Hwan Bae),구현(Hyun Koo),유일환(Il-Hwan Yoo),정명진(Myung-jin Jung),강석일(Sukill Kang),박찬(Chan Park) 대한전기학회 2009 대한전기학회 학술대회 논문집 Vol.2009 No.7
Amorphous oxide semiconductor InGaZnO₄(IGZO) is a very promising candidate of channel layer in transparent thin film trasisitor(TTFT) because of its high mobility and high transparency in visible light region. Amorphous IGZO films were deposited at room temperature on a fused silica substrate using pulsed laser deposition method. In-situ post annealing was carried out at 150-450C right after film deposition. The O₂ partial pressures during the deposition and the post annealing was fixed to 10mTorr. The electron transport properties of the amorphous IGZO films were improved by thermal annealing. The temperature range in which the improvement of the electrical properties, was 150C~300C.