http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
김채윤(Chaeyun Kim),전국화(Gukhwa Jeon),윤효원(Hyowon Yoon),박영은(Yeongeun Park),김광재(Gwangjae Kim),김상엽(Sangyeob Kim),강규혁(Gyuhyeok Kang),신강희(Kanghee Shin),김동석(Dong-Seok Kim),석오균(Ogyun Seok) 대한전자공학회 2023 대한전자공학회 학술대회 Vol.2023 No.6
SiC MOSFET has excellent breakdown characteristics owing to high critical electric field. In addition, it is attracting attention as a power semiconductor for electric vehicle or satellite because it can miniaturize the power module due to its low on-resistance. Particularly in the space environment, the TID effects occur due to the influence of radiation, causing serious malfunctions of power devices. In this paper, SiC MOSFET and ntype MOSCAP were irradiated with proton to analyze effects of cosmic radiation. As a result of irradiating high-energy proton, a hole trap is created inside because of the TID effects. Because of the hole trap, the electrical characteristics such as threshold voltage, on-resistance, and breakdown voltage of the MOSFET were changed. In addition, as a result of extracting oxide characteristics by irradiating MOSCAP with the same conditions, it was verified that the fixed charge inside the oxide increased. Finally, the breakdown characteristic degradation mechanism was proved by edge termination simulation using TCAD. In this paper, the TID effects by irradiation is verified through experiments and simulations.