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조판상 대한전자공학회 1976 전자공학회지 Vol.13 No.6
InSb-Sn 박막 Hall소자를 InSb-Sn분말을 flash흡착법으로 슬라이드 글래스 위에 흡착하여 만들었다. 이 소자를 자속계로 사용할 때 특성이 재현성이 좋고 직선성이 양호하였다. InSb-Sn thin film Hall device Was drepared by flash evaporation of InSb-Sn powder on the Slide qlass. The Characteristics Curve of this device showcd good linearity and reproducibility. InSb-Sn thin film Hall device Was drepared by flash evaporation of InSb-Sn powder on the Slide qlass. The Characteristics Curve of this device showcd good linearity and reproducibility.
曺判尙 朝鮮大學校 文理科大學 1973 論文集 Vol.1 No.-
No attempts have been made to explain the theory of elementary particles by means of topology. And yet concept of multiplicity of topology and Fibrebundle's theory correspond to: ① The selection rule of decay numbers of elementary particles ② And the problems about the frequent occurence of the state of electric charge of elementary particles in a high energy region. Part I of this paper attempts to apply topology connection with the above¹, and Part II does the same with the above² The results from the attempt are in agreement with the experimental data.
n型半導體Si과 n型半導體 In_2O_3接合太陽電池開發에 關한 硏究
曺判尙,朴福男,李秀一 조선대학교 기초과학연구소 1980 自然科學硏究 Vol.3 No.1
Having In_2O_3 (SnO_2 5wt%) Powder been evaporated by the flash method on (111) face of Si single crystal wafer in a vacuum of 10^-5 mmHg, Si-In_2O_3 n-n heterojunction was produced by heat treatment for 30 minutes 250℃ in air. In order to investigate the physical characteristics of n-n heterojunction the optical and electrical properties of In_2O_3 thin film were considered. By considering the optical and electrical properties of Si-In_2O_3 n-n heterojunction, and completing its energy band profile the basic properties of Si-In_2O_3 n-n hererojunction were analyzed. Si-In_2O_3 n-n heterojunction, a good photovoltaic device, with a range of photovoltaic effect from 300nm to 1100nm, was equal in quality to the photovoltaic device, with a range of photovoltaic effect from 300nm to 1100nm, was wqual in quality to the photovoltaic sensitivity of Si p-n homojunction. Since Si-In_2O_3 n-n heterojunction was sensitive to all ranges of the solar energy spectrum, it would be of great use as a solar cell.
曺判尙 朝鮮大學校 1977 綜合論文集 Vol.1977 No.-
After evaporating the CdSe crystal in the Vacuum of 10??mm Hg, the CdSe thin film was made. The CdSe thin film was the polycrystal that had the Hexagonal structure. An absorption edge of Cd Se thin film was at 730nm, in this case, the reflective index was 2,3, and the peak of spectral response of photoconductivity was at 730nm.
曺判尙 조선대학교 기초과학연구소 1978 自然科學硏究 Vol.1 No.1
I_nS_b-S_n薄膜을 眞空蒸着裝置를 使用하여 ∼10^-5mmHg의 眞空內에서 I_nS_b-S_n 紛末을 flash蒸着法으로 slid glass위에 蒸着하여 만들었다. 이 Hall素子를 磁束計로 使用할 때 特性이 再現性이 좋고 直線性이 良好하였다. I_nS_b-S_n thin film Hall device was prepared by flarh evaporation of I_nS_b-S_n powder on the slide glass. The Characteristics curve of this device showed good linearity and reproducibility.
曺判尙 朝鮮大學校 1977 綜合論文集 Vol.1977 No.-
The CdS thin film was made by the vacuum evaporation method. The energy gap of CdS thin film measured with the Optical transmittancc was 2.45 eV. The λ?? counted by Sellmeier dispersion equation was 0.477㎛.
崔勝平,曺判尙 朝鮮大學校 文理科大學 1973 論文集 Vol.1 No.-
Rayleigh was the first man who in 1902 discussed the theoretical radio pressure of ultrasonic waves; in the usual conditions of the experiment, Langevin's radio pressure was observed in 1932. This paper attempts to discuss the radio pressure of sound waves. The lengths of physical things are long enough compared with sound wave length so that the influence of diffraction is negligible. in this condition, the experimental measurement of radio pressure using the things that absorb sound waves shows the radio pressure is determined only by crossection of things perpendicular to the sound wave direction, and the things which completely reflect sound waves have a different radio pressure according to the shapes of things.
曺判尙 朝鮮大學校 文理科大學 1975 論文集 Vol.2 No.-
Since 1905, the problems on the paradox of a clock in the inertial system have been dealt with in various ways. Examining this problem with Moller, Einstein-Tolmann method under the uniformly accelerated motion in a space of gravitational field, the author found; (1) this problem can be solved by the general theory of relativity, and the special theory of relativity is insufficient to solve it, (2) the paradox of clock cna't be recognized.
조판상,이수일 조선대학교 기초과학연구소 1980 自然科學硏究 Vol.3 No.1
The preparation of polycrystalline n-type CdS electrode by chemical bath deposition is reported. The behavior of these electrodes in aqueous solutions of different pH values in the presense and absence of illumination is shown. The physical processes involved in the conversion of radiant energy to electrical and/or chemical energy in a semiconductor-electrolyte cell are described. These processes are then related to the problem of solar energy conversion and the desirable characteristics of such a cell are defined and potential efficiency of the device is shown to be comparable to that of a p-n junction solar cell. Preliminary measurements of a CdS cell gave 0.15% external conversion efficiencty for monochromatic excitation at an incident power density of 0.4㎽/㎠. Noncorrosive electrode reaction and charge exchange processes are known and may be of use.