현장 / 목회간증 / 평리동 가요

최치규 기독교대한성결교회 활천사 1979 활천 Vol.386 No.-

고상 에피택시 방법으로 Si(111)기판 위에 성장시킨 PtSi 박막의 구조적 특성

이정용,김건호,강민성,서경수,김상기,최치규 濟州大學校 基礎科學硏究所 1997 基礎科學硏究 Vol.10 No.2

Si(111)-7×7 기판을 실온과 500℃로 유지하면서 약 100 Å의 Pt를 증착한 후 750℃의 온도에서 in situ 열처리하는 SPE방법으로 에피택셜 PtSi 박막을 성장시켰다. X-선 회절(XRD), ⁴He+이온 후방산란 분광(RBS) 및 고분해 투과전자현미경(HRTEM) 분석 결과, 기판의 온도를 500℃로 하고 750℃에서 열처리한 경우, 성장된 박막은 양질의 판상구조를 갖는 에피택셜 PtSi 상으로 확인되었으며, 40분간 열처리한 시료의 Pt에 대한 RBS minimum yield가 약 43%로 나타났다. 성장된 PtSi 박막층과 기판 Si(111)의 계면은 PtSi[10??]//Si[011], PtSi(010)//Si(111)의 정합성을 나타내었으며 TEM 분석으로부터 PtSi/Si 계면은 상당히 평활한 것으로 나타났다. Epittaxial PtSi films were grown by deposition of a thin Pt (100 Å) film on a Si(111)-7×7 substrate at room temperature of at 500℃ followed by in situ annealing at 750℃ in ultra-high vacuum. From the X-ray diffraction (XRD), ⁴He+ ion backscattering spectrometry (RBS), and the high-resolution transmission electron microscopy (HRTEM) measurements, the best-quality planar PtSi films with a minimum Pt yield of ∼43%, as determined by RBS, was obtanined by deposition of Pt at 500℃ followed by in situ annealing at 750℃ for 40 min. The orientation relationship between the epitaxial PtSi film and the Si(111) substrate, as obtained from the HRTEM lattice image, was PtSi[110]//Si[011], PtSi(010)//Si(111) with no misorientation angle, and the PtSi/Si interface was fairly smooth.

투명전도막 Cadmium Stannate의 특성에 관한 연구

최치규,김건호 濟州大學校 師範大學 科學敎育硏究所 1985 科學敎育 Vol.2 No.-

CTO(Cadmium Stannate Oxide) thin film were deposited onto borosilicate glass by chemical spray pyrolysis. The structure of the film had been identified as polycrystalline Cd_(2), SnO_(4), having(l30) (310) (321) (041) and (341) planes. The transmittanced of the films was more than 90% in visible range and the films reflect almost all of the infrared spectra beyond 2.8um . The refractive index of this film was 1.8 at 6,000Å and 2.2 at 5,l00Å. And the optical band gap were 2.85eV. Through annealing in Argon ambient the sheet resistance of the CTO films were lowed.

Au/CdTe Schottky Junction의 Barrier Height에 관한 연구

최치규,현동걸 濟州大學校 師範大學 科學敎育硏究所 1984 科學敎育 Vol.1 No.-

The effective barrier height Φ_(Bn) in a metal -semicondutor tunnel junction was obtained by the Bethe's thermionic emission theory. Au /CdTe Schottky juncticm was prepared on the slide glass coated with SnO_(2) by the C.V. D. methode, and the evarporation of CdTe was carried out in a vacunm of ~10^(-6) torr. Its current-voltage characteristics were investiga-ted in details at a room temperature. The barrier heights deduced from saturation current I_(SP) with I-V cha-racteristics was, Φ_(Bn) = 0.58eV, and ideality factor n = 1.7.

CdTe薄膜의 M-I-M 構造에서 Carrier Transport에 關하여

崔圭晃,崔致圭 慶尙大學校 1982 論文集 Vol.21 No.1

According to the energy band model for the Al-CdTe-Ag sandwich structure, we have investigate to the mechanism of the current limited transport(CLT). As the bias voltage applied to the ?? and ?? electrode, the potential barrier difference for this structure was found 0.2eV. From what this results, we conclude that the mechanism of the current limited transport due to the potential barrier of the contact limited current. Not only this phenomena but also the annealing effect of thin film was shown that the distingushable for virgin film.

透明薄膜셀레늄의 電壓-펄스 注入에 의한 電荷드리프트 移動度에 관한 硏究

李丁柱,金仁湖,崔圭晃,崔致圭 慶尙大學校 1982 論文集 Vol.21 No.1

The drift mobility of carriers in the vitreous Se thin films were measured by the Haynes-Schokley method. It had been shown that the hole mobility was about 0.83㎤/V·sec and the drift velocity showed no time dependence. It had also been shown that the value of Pool-Frenkel parameter was ∼2 from the -V curve.

Nano-Mechanical Analyses of Low-Dielectric-Constant SiOC(-H) Thin Films Deposited by Using Plasma-Enhanced Chemical-Vapor Deposition

최치규,정안수,김창영,R. Navamathavan,우종관,이광만 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5

The nano-mechanical properties of low-dielectric-constant SiOC(-H) thin films were studied by means of a nanoindentation technique. SiOC(-H) films were deposited on p-Si(100) substrates at different radio, frequency (rf) powers by using plasma-enhanced chemical-vapor deposition (PECVD) with triethoxysilane (TES; C6H16O3Si) and oxygen as precursors. The continuous stiffnes measurement (CSM) technique was used to determine the hardneses and the elastic moduli of the SiOC(-H) thin films. The elastic modulus and the hardnes of the as-deposited SiOC(-H) films were found to be in the range of 5 ∽ 15 GPa and 0.6 ∽ 1.6 GPa with different rf power,respectively. X-ray photoelectron spectroscopy (XPS) was used to characterize and compare the mechanical properties of the SiOC(-H) thin films. The dielectric constant of the SiOC(-H) films increased slightly with increasing rf power and then droped to its lowest value of 2.3 for the film deposited at an rf power of 800 W.

Bonding Conguration and Electrical Properties of Carbon-Incorporated Low-Dielectric-Constant SiOC(-H) Films with Nano-Pore Structures Deposited by Using PECVD

최치규,김창영,정안수,R. Navamathavan 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5

Low-dielectric-constant SiOC(-H) thin films were prepared on p-type Si(100) substrates by using plasma-enhanced chemical-vapor deposition (PECVD) with triethoxysilane (TES; C6H16O3Si) and oxygen gas as precursors and Ar as a carrier gas. The effects of the radio-frequency (rf) power on the structural and the electrical properties were studied. The films were analyzed by using Fourier-transform infrared (FTIR) spectroscopy, X-ray photoelectron (XPS) spectroscopy and I-V and C-V measurements. FTIR studies were carried out in the absorbance mode in the range of 700 to 4000 cm-1, which showed various bonding configurations, such as Si-O-Si(C), Si-CH3, -OH and CHn bonds, in the films. The dielectric constants of the SiOC(-H) ilms were investigated using a metal-insulator-semiconductor [MIS, Al/SiOC(-H)/p-Si(100)] structure at a frequency of 1 MHz.

Mechanical Properties of Low-Dielectric-Constant SiOC(-H) Thin Films with Different Substrate Temperatures Deposited by Using PECVD

최치규,김창영 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.1

In the multi-level wiring structure in ultra-large-scale integration circuits, a bottleneck against high-speed operation of the elements is the capacitance between wires. If the capacitance between wires is to be decreased, the dielectric constant of an interlayer insulating flm must be reduced. Among the low-dielectric-constant films, the SiOC(-H) film is an appropriate materials for the advanced Cu interconnects applications. In this study, we report the mechanical properties of SiOC(-H) thin films prepared with different substrate temperatures and deposited on p-type Si(100) substrates by using plasma-enhanced chemical vapor deposition (PECVD) with dimethoxy-dimethylsilane (DMDMS, C4H12O2Si) and oxygen gas as precursors. Nanoindentation studies were carried out in order to determine the mechanical properties of the SiOC(-H) films. The hardness and the elastic modulus of SiOC(-H) films prepared with different substrate temperatures were measured to be in the range of 2.25 - 4.5 and 20 - 35 GPa, respectively. The values of hardness and elastic modulus were observed to increase with increasing of substrate temperature. In the SiOC(-H) film, the -CH₃ group, as an end group, was broken when the substrate temperature was increased, thereby reducing the lm's density to increase the values of the mechanical properties. FTIR spectroscopy studies were carried out in the absorbance mode in the range of 400 to 4000 cm-1, which showed various bonding configurations, such as the Si-O-Si(C), the Si-CH₃, the -OH, the CHn bonds in the films. The dielectric constant of the SiOC(-H) films was investigated using a metal-insulator-semiconductor [MIS, Al/SiOC(-H)/p-Si(100)] structure at a 1 MHz frequency.

P2P 프록시 캐싱을 이용한 VOD 시스템의 성능 향상

최치규,이근정,최창열,최황규 강원대학교 정보통신연구소 2005 정보통신논문지 Vol.9 No.-

This paper proposes a new proxy caching scheme of VOD systems in P2P network environments. In our P2Proxy caching scheme, a proxy server is composed of a client group in which each client stores a part of stream receiving from a VOD server into its client buffer. Each streaming part of the clients is equal to a buffer size which is desired at request its hour. A single client receives the request stream from other clients as long as the parts of the stream are available in the client group. Otherwise, the missing parts of the stream which are not in the client group are directly received from the VOD server through another patching channel. In the experiments, we evaluate the performance of our proposed scheme and the result is compared with the existing P2P streaming systems.