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켈빈 소스를 포함하는 SiC MOSFET의 가전용 전력변환시스템 적용을 위한 부트스트랩 회로 설계
함지선,최성휘 전력전자학회 2024 전력전자학회 논문지 Vol.29 No.2
Research on wide bandgap(WBG) devices, such as silicon carbide metal oxide semiconductor field effect transistor(SiC MOSFET) and gallium nitride high-electron mobility transistor, has been recently conducted. The use of WBG devices in power conversion systems for home appliances has been increasingly reconsidered. Most home appliance systems use bootstrap circuits and shunt resistors to reduce costs. The bootstrap circuit with shunt resistors cannot be applied to a SiC MOSFET driving circuit in which a Kelvin source exists. In this paper, a bootstrap circuit design method for SiC MOSFET driving in the presence of shunt resistors and Kelvin sources was proposed. The validity of the proposed method was verified by a 7 kW grid-connected converter.
Yasushige Mukunoki,Takeshi Horiguchi,Hiroshi Nakatake,Masaki Kuzumoto,Makoto Hagiwara,Hirofumi Akagi 전력전자학회 2019 ICPE(ISPE)논문집 Vol.2019 No.5
This paper describes a physical analysis of gate-source voltage (vGS) dependencies of parasitic capacitors of a discrete Silicon-Carbide (SiC) MOSFET. A new picture of depletion region that induces the parasitic capacitors is proposed. The proposed picture successfully explains the origins and the intrinsic relations of the vGS-dependencies of the parasitic capacitors. Subsequently, the effects of the vGS dependent models are considered via the detailed analysis of the switching waveforms, which clarifies their individual impacts on the switching waveforms.
철도차량 전동기 드라이빙 효율 증대를 위한 SiC 전력용 반도체 기반의 2레벨 3상 인버터의 손실 특성 비교
최태희(Tae-hee Choi),이현재(Hyun-jae Lee),김길동(Gil-dong Kim),이건복(Gun-bok Lee),손진근(Jin-Geun Shon) 대한전기학회 2021 전기학회논문지 P Vol.70 No.4
The purpose of this paper is to compare and analyze the loss of propulsion inverter using SiC and Si power semiconductors for high efficiency of railway vehicles with renewable energy. Accordingly, loss comparison and analysis were carried out through PSIM Thermal Module and Loss Modeling with a SiC-MOSFET module and Si-IGBT Module. As a result, 2-level 3phase inverter using SiC-MOSFET module had extremely low switching loss compared to propulsion inverter that using Si-IGBT module. If SiCMOSFET module is used in propulsion inverter of traction motor for railway vehicles, it is considered to be advantageous for high efficiency.
Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs
Ke, Junji,Zhao, Zhibin,Sun, Peng,Huang, Huazhen,Abuogo, James,Cui, Xiang The Korean Institute of Power Electronics 2019 JOURNAL OF POWER ELECTRONICS Vol.19 No.4
This paper systematically investigates the influence of device parameters spread on the current distribution of paralleled silicon carbide (SiC) MOSFETs. First, a variation coefficient is introduced and used as the evaluating norm for the parameters spread. Then a sample of 30 SiC MOSFET devices from the same batch of a well-known company is selected and tested under the same conditions as those on datasheet. It is found that there is big difference among parameters spread. Furthermore, comprehensive theoretical and simulation analyses are carried out to study the sensitivity of the current imbalance to variations of the device parameters. Based on the concept of the control variable method, the influence of each device parameter on the steady-state and transient current distributions of paralleled SiC MOSFETs are verified separately by experiments. Finally, some screening suggestions of devices or chips before parallel-connection are provided in terms of different applications and different driver configurations.
Influence of Device Parameters Spread on Current Distribution of Paralleled Silicon Carbide MOSFETs
Junji Ke,Zhibin Zhao,Peng Sun,Huazhen Huang,James Abuogo,Xiang Cui 전력전자학회 2019 JOURNAL OF POWER ELECTRONICS Vol.19 No.4
This paper systematically investigates the influence of device parameters spread on the current distribution of paralleledsilicon carbide (SiC) MOSFETs. First, a variation coefficient is introduced and used as the evaluating norm for the parametersspread. Then a sample of 30 SiC MOSFET devices from the same batch of a well-known company is selected and tested underthe same conditions as those on datasheet. It is found that there is big difference among parameters spread. Furthermore,comprehensive theoretical and simulation analyses are carried out to study the sensitivity of the current imbalance to variationsof the device parameters. Based on the concept of the control variable method, the influence of each device parameter on thesteady-state and transient current distributions of paralleled SiC MOSFETs are verified separately by experiments. Finally, somescreening suggestions of devices or chips before parallel-connection are provided in terms of different applications and differentdriver configurations.
Sayan Acharya,Anup Anurag,Nithin Kolli,Subhashish Bhattacharya 전력전자학회 2019 ICPE(ISPE)논문집 Vol.2019 No.5
To ramp up the adaptation of the highly optimized high current 1.2 kV Sillicon Carbide (SiC) based Metal Oxide Semiconductor Field Effect Transistor (MOSFET) power modules, a high power three-phase two-level power block is designed which is rated at 100 kVA and operates with 800 V DC bus. The power modules combined with low inductance busbar and optimized loop thermo-syphon based heatsink extracts the full performance of the power electronic switches. In this paper, the design details of the power block is presented. Furthermore, the performance of the power block is qualified by a back-to-back pump back test set up where two power blocks are interconnected via inductors. Furthermore, closed loop voltage and current control are implemented to circulate the desired amount of AC current between the power blocks. Moreover, heat run tests are carried out to quantify the thermal performance of the thermal management system. The experimental results demonstrate the performance benefits of the power block.
3.3kV SiC MOSFET 설계 및 제작을 위한 JFET 및 FLR 최적화 연구
구상모,강예환,이현우 한국반도체디스플레이기술학회 2023 반도체디스플레이기술학회지 Vol.22 No.3
The potential performance benefits of Silicon Carbide(SiC) MOSFETs in high power, high frequency power switching applications have been well established over the past 20 years. In the past few years, SiC MOSFET offerings have been announced by suppliers as die, discrete, module and system level products. In high-voltage SiC vertical devices, major design concerns is the edge termination and cell pitch design Field Limiting Rings(FLR) based structures are commonly used in the edge termination approaches. This study presents a comprehensive analysis of the impact of variation of FLR and JFET region on the performance of a 3.3 kV SiC MOSFET during. The improvement in MOSFET reverse bias by optimizing the field ring design and its influence on the nominal operating performance is evaluated. And, manufacturability of the optimization of the JFET region of the SiC MOSFET was also examined by investigating full-map electrical characteristics.
Paul Sochor,Andreas Huerner,Qing Sun,Rudolf Elpelt 전력전자학회 2023 ICPE(ISPE)논문집 Vol.2023 No.-
Compact models of SiC MOSFETs for circuit simulation have evolved significantly in recent years in terms of accuracy, computation speed and convergence robustness. Circuit designers benefit from models that they can use in computer simulation to understand, troubleshoot and optimize the static and dynamic device behavior of applications through virtual prototyping. Among the various compact models available there can be significant differences in structure, complexity, and considered device properties that can impact their usefulness in virtual prototyping. SiC MOSFETs have certain unique behavioral aspects due to their particular device structure and material characteristics that must be considered for its compact model it to be effective. This paper discusses several key characteristics of SiC MOSFETs that are also essential for their compact models such as short-channel effects, body diode recovery and snappiness, dead time dependency, and threshold voltage hysteresis.