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- 저자 : Sayan Acharya (검색결과 2 건)
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Sayan Acharya,Anup Anurag,Nithin Kolli,Subhashish Bhattacharya 전력전자학회 2019 ICPE(ISPE)논문집 Vol.2019 No.5
To ramp up the adaptation of the highly optimized high current 1.2 kV Sillicon Carbide (SiC) based Metal Oxide Semiconductor Field Effect Transistor (MOSFET) power modules, a high power three-phase two-level power block is designed which is rated at 100 kVA and operates with 800 V DC bus. The power modules combined with low inductance busbar and optimized loop thermo-syphon based heatsink extracts the full performance of the power electronic switches. In this paper, the design details of the power block is presented. Furthermore, the performance of the power block is qualified by a back-to-back pump back test set up where two power blocks are interconnected via inductors. Furthermore, closed loop voltage and current control are implemented to circulate the desired amount of AC current between the power blocks. Moreover, heat run tests are carried out to quantify the thermal performance of the thermal management system. The experimental results demonstrate the performance benefits of the power block.
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Anup Anurag,Sayan Acharya,Subhashish Bhattacharya 전력전자학회 2019 ICPE(ISPE)논문집 Vol.2019 No.5
MV solid state transformers enabled by SiC semiconductor devices is a promising replacement to conventional low frequency transformers. However, when MV SiC devices are used in converter applications, they are exposed to a high peak stress (5 kV to 10 kV) and a very high dv / dt (10 kV/μs to 100 kV/μs). Operating these semiconductor devices at these high peak stresses require careful designing from the packaging point of view, as well as designing the auxiliary systems such as the gate drivers and busbars, to handle the peak stress conditions. Recently, an extra high voltage (XHV) power module has been developed by Wolfspeed to package the 10 kV SiC MOSFETs for continuous and reliable operation. This paper aims at testing these modules in continuous operation for qualifying their operation in a MV solid state transformer. Reliable operation of these modules require the development of reliable auxiliary parts including gate drivers, bus bars and inductors. Design and development of the auxiliary system is also carried out. Successful tests demonstrating operation at MV levels are also shown. These tests serve as a qualification method for using these devices in a MV solid state transformer. It is envisaged that successful operation of these devices would accelerate the growth and deployment of MV SiC devices for field operation.
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