대기압 플라즈마를 이용한 P타입 태양전지 웨이퍼 도핑 연구

윤명수(Myoungsoo Yun),조태훈(Taehun Jo),박종인(Jongin Park),김상훈(Sanghun Kim),김인태(In Tae Kim),최은하(Eun Ha Choi),조광섭(Guangsup Cho),권기청(Gi-Chung Kwon) 한국태양광발전학회 2014 Current Photovoltaic Research Vol.2 No.3

Thermal doping method using furnace is generally used for solar-cell wafer doping. It takes a lot of time and high cost and use toxic gas. Generally selective emitter doping using laser, but laser is very high equipment and induce the wafer’s structure damage. In this study, we apply atmospheric pressure plasma for solar-cell wafer doping. We fabricated that the atmospheric pressure plasma jet injected Ar gas is inputted a low frequency (1 kHz ~ 100 kHz). We used shallow doping wafers existing PSG (Phosphorus Silicate Glass) on the shallow doping CZ P-type wafer (120 ohm/square). SIMS (Secondary Ion Mass Spectroscopy) are used for measuring wafer doping depth and concentration of phosphorus. We check that wafer’s surface is not changed after plasma doping and atmospheric pressure doping width is broaden by increase of plasma treatment time and current.

산소 이온 보조 분자선 증착법을 이용한 Al-doped ZnO박막제조 및 염료감응형 태양전지에의 응용

김성진 ( Sung Jin Kim ),최균 ( Kyoon Choi ),최세영 ( Se Young Choi ) 대한금속재료학회(구 대한금속학회) 2015 대한금속·재료학회지 Vol.53 No.12

Al-doped ZnO thin films were deposited on glass substrates at room temperature by ion-beam-assisted molecular beam epitaxy (MBE) deposition. The crystallinity, microstructure, surface roughness, and electrical, optical and mechanical prosperities of thin films were investigated as a function of the deposition parameter and the ion energy. The microstructure of the Al-doped ZnO crystalline films on amorphous glass substrates was closely related to oxygen ion bombardment on the growing surface. The effects on the film may be divided into two categories: 1) the enhancement of atom mobility at low energetic ion bombardment and 2) the surface damage by radiation damage at high energetic ion bombardment. A large sized grain structure was obtained in the films deposited at 300 eV. At a high energy ion bombardment of 600eV, however, only a smaller grain structure with high hardness was observed. The electrical properties of the deposited films were significantly related to the change of microstructure and crystallinity. The Al-doped ZnO films with a large size grain structure have better electrical properties than those with a smaller grain structure because the grain boundary scattering decreased in the large size structure compared with the small size grains. The optical photoluminescence of Al-doped ZnO thin films was dependent on the grain size. And then the dye-sensitized solar cell (DSSC) fabricated on the AZO film grown at ion beam energy 300eV condition, it exhibits superior conversion efficiency than the other condition sample. Therefore, transparent conductive glass applying in DSSCs must have a low sheet resistance, a high transmittance in the ultraviolet-visible-infrared region and an excellent surface microstructure.

채널 식각형 비정질 실리콘 박막 트랜지스터에서 배면에 수소 이온 도핑효과

장진,최종현,이경하,임병천,김창수 慶熙大學校 레이저 工學硏究所 1997 레이저공학 Vol.8 No.-

We have studied the effect of the hydrogen ion doping on the free surface of back channel etched a Si:H TFTs. The hydrogen ion doping on the back channel etched TFT reduces the off-state photo leakage current by one order of magnitude. The reduction of the photo-leakage current is due to the creation of defect states at the free surface by hydrogen ion doping. After hydrogen ion doping on the free surface, the field effect mobility change little, but the threshold voltage increases, which is due to the state creation in a-Si:H by ionized H ions. Furthermore, the off-state leakage current under frontlight illumination can be reduced by 2 orders magnitude by hydrogen ion doping on the back channel of a Si:H TFT.

리튬이온전지용 양극활물질 LiNi_0.83 Co_0.11Mn_0.06O₂의 전기화학적 특성에 미치는 Ce와 Nd 희토류 금속의 단독 혹은 이중 도핑효과

김유영,하종근,조권구,Kim, Yoo-Young,Ha, Jong-Keun,Cho, Kwon-Koo 한국분말재료학회 (*구 분말야금학회) 2019 한국분말재료학회지 (KPMI) Vol.26 No.1

Layered $LiNi_{0.83}Co_{0.11}Mn_{0.06}O_2$ cathode materials single- and dual-doped by the rare-earth elements Ce and Nd are successfully fabricated by using a coprecipitation-assisted solid-phase method. For comparison purposes, non-doping pristine $LiNi_{0.83}Co_{0.11}Mn_{0.06}O_2$ cathode material is also prepared using the same method. The crystal structure, morphology, and electrochemical performances are characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectrometer (EDS) mapping, and electrochemical techniques. The XRD data demonstrates that all prepared samples maintain a typical ${\alpha}-NaFeO_2$-layered structure with the R-3m space group, and that the doped samples with Ce and/or Nd have lower cation mixing than that of pristine samples without doping. The results of SEM and EDS show that doped elements are uniformly distributed in all samples. The electrochemical performances of all doped samples are better than those of pristine samples without doping. In addition, the Ce/Nd dual-doped cathode material shows the best cycling performance and the least capacity loss. At a 10 C-rate, the electrodes of Ce/Nd dual-doped cathode material exhibit good capacity retention of 72.7, 58.5, and 45.2% after 100, 200, and 300 cycles, respectively, compared to those of pristine samples without doping (24.4, 11.1, and 8.0%).

Enhancement of high temperature cycling stability in high-nickel cathode materials with titanium doping

Song, Jun-Ho,Bae, Joongho,Lee, Ko-woon,Lee, Ilbok,Hwang, Keebum,Cho, Woosuk,Hahn, Sang June,Yoon, Songhun THE KOREAN SOCIETY OF INDUSTRIAL AND ENGINEERING 2018 JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY -S Vol.68 No.-

<P><B>Abstract</B></P> <P>Titanium doping is employed to enhance the structural strength of a high-Ni layered cathode material in lithium ion batteries during high temperature cycling. After Ti-doping, the external morphology remains similar, but the lattice parameters of the layered structure are slightly shifted toward larger values. With application of the prepared materials as cathodes in lithium-ion batteries, the initial capacities are similar but the cycling performance at 25°C is enhanced by Ti-doping. During high temperature cycling at 60°C, furthermore, highly improved capacity retention is achieved with the Ti-doped material (95% of initial capacity at 50th cycles), while cycle fading is accelerated with the bare electrode. This enhancement is attributed to better retention of the compressive strength of the particles and retarded crack formation within the particles. In addition, impedance increase is reduced in the Ti-doped electrode, which is attributed to an improvement in the structural strength of the high-Ni cathode material with Ti-doping.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Ti doping of high Ni-layered cathode materials in lithium ion batteries. </LI> <LI> Improvement of high temperature cycling after Ti doping. </LI> <LI> Less crack formation and lower impedance in Ti doped cathode material. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>

The effect of cobalt ions doping in ZnCr2O4 spinel oxide for the catalytic activity of methane combustion

He Jia,Shao Xiaoqiang,Su Qin,Zhao Donglin,Feng Shaojie,오원춘 한국세라믹학회 2023 한국세라믹학회지 Vol.60 No.1

A series of novel cobalt ion-doped ZnCr2−xCoxO4 (x = 0, 0.1, 0.15, 0.2) spinel oxides were synthesized with the hydrothermal method. X-ray diffraction, scanning electron microscope, specific surface area, Raman spectroscopy, X-ray photoelectron spectroscopy, temperature-programmed desorption of oxygen, and other analytical techniques were used to characterize the structure, morphology, and catalytic performance of each sample. Experiment results showed that the doping of cobalt ion significantly promoted the phase crystallization of spinel oxide. Cobalt ion-doped ZnCr2−xCoxO4 (x = 0.1, 0.15, 0.2) nanoparticles with high specific surface area were synthesized at 773 K, with ZnCr2O4 forming a spinel phase at 1173 K. Catalytic experiments revealed that the catalytic activity of ZnCr2−xCoxO4 was effectively improved. Cobalt ion-doped ZnCr1.85Co0.15O4 catalyst catalyzed methane combustion reaction temperature at T90% (the temperature where 90% of methane was converted) of about 573 K, while the undoped ZnCr2O4 sample had the highest catalytic performance at T90% of about 773 K. The order of catalytic activity was: ZnCr1.85Co0.15O4 > ZnCr1.9Co0.1O4 > ZnCr1.8Co0.2O4 > ZnCr2O4. Results of catalytic experiments showed that the surface area of the catalyst increased after partial replacement of chromium ions by cobalt ions and that the increase in surface area of the catalyst provided more active sites, thus improving the reaction activity.

Fabrication of excimer laser annealed poly-si thin film transistor by using an elevated temperature ion shower doping

Park, Seung-Chul,Jeon, Duk-Young The Korean Institute of Electrical and Electronic 1998 전기전자재료 Vol.11 No.11

We have investigated the effect of an ion shower doping of the laser annealed poly-Si films at an elevated substrate temperatures. The substrate temperature was varied from room temperature to 300$^{\circ}C$ when the poly-Si film was doped with phosphorus by a non-mass-separated ion shower. Optical, structural, and electrical characterizations have been performed in order to study the effect of the ion showering doping. The sheet resistance of the doped poly-Si films was decreased from7${\times}$106 $\Omega$/$\square$ to 700 $\Omega$/$\square$ when the substrate temperature was increased from room temperature to 300$^{\circ}C$. This low sheet resistance is due to the fact that the doped film doesn't become amorphous but remains in the polycrystalline phase. The mildly elevated substrate temperature appears to reduce ion damages incurred in poly-Si films during ion-shower doping. Using the ion-shower doping at 250$^{\circ}C$, the field effect mobility of 120 $\textrm{cm}^2$/(v$.$s) has been obtained for the n-channel poly-Si TFTs.

다결정 실리콘 박막 위에 P이온 샤워 도핑 후 열처리 방법에 따르는 도펀트 활성화 및 결함 회복에 관한 효과

김동민,노재상,이기용,Kim, Dong-Min,Ro, Jae-Sang,Lee, Ki-Yong 한국전기화학회 2005 한국전기화학회지 Vol.8 No.1

Ion-Shower-Doping장비 및 $PH_/3M_2$혼합 가스를 사용하여 Phosphorous를 ELA방법으로 제조된 Poly-Si에 가속 전압 및 조사량을 변수로 이온 주입하였다. As-implanted된 시편의 결정도는 UV-transmittance spectroscopy를 사용하여 측정하였다. 이 때 UV-transmittance를 이용하여 측정한 값은 Raman spectroscopy를 이용해서 측정한 값과 서로 관련되어 있음을 알았다. 면 저항은 가속전압이 1kV에서 15kV까지 증가함에 따라 감소한다 그러나 가혹한 도핑조건하에서는 가속전압의 증가 시 면 저항이 증가한다. 이는 활성화 열처리 후 치유되지 않은 결함에 의해 전자가 포획되며 이에 따라 전하 운반자의 농도가 감소하는 때문이다. 활성화 열처리는 로열처리, RTA 열처리, ELA 열처리 등의 방법으로 수행하였고 열처리 방법에 따르는 도펀트의 활성화 및 결함의 회복의 거동을 연구하였다 Ion shower doping with a main ion source of $P_2H_x$ using a source gas mixture of $PH_3/H_2$ was conducted on excimer-laser-annealed (ELA) poly-Si.The crystallinity of the as-implanted samples was measured using a UV-transmittance. The measured value using UV-transmittance was found to correlate well with the one measured using Raman Spectroscopy. The sheet resistance decreases as the acceleration voltage increases from 1kV to 15kV at the moderate doping conditions. It, however, increases as the acceleration voltage increases under the severe doping conditions. The reduction in carrier concentration due to electron trapping at uncured damage after activation annealing seems to be responsible for the rise in sheet resistance. Three different annealing methods were investigated in terms of dopant-activation and damage-recovery, such as furnace annealing, excimer laser annealing, and rapid thermal annealing, respectively.

Dopant-Activation and Damage-Recovery of Ion-Shower-Doped Poly-Si through $PH_3/H_2$ after Furnace Annealing

Kim, Dong-Min,Kim, Dae-Sup,Ro, Jae-Sang,Choi, Kyu-Hwan,Lee, Ki-Yong The Korean Infomation Display Society 2004 Journal of information display Vol.5 No.1

Ion shower doping with a main ion source of $P_2H_x$ using a source gas mixture of $PH_3/H_2$ was conducted on excimer-laser- annealed (ELA) poly-Si. The crystallinity of the as-implanted samples was measured using a UV-transmittance. The measured value of as-implanted damage was found to correlate well with the one calculated through/obtained from TRIM-code simulation. The sheet resistance was found to decrease as the acceleration voltage increased from 1 kV to 15 kV at a doping time of 1 min. However, it increases as the acceleration voltage increases under severe doping conditions. Uncured damage after furnace annealing is responsible for the rise in sheet resistance.

K-doping effect of the superconductivity in K2xFeTe1-xSx (0.07 ≤ x ≤ 0.3)

Cheng Cheng,Zhenjie Feng,Qing Li,Tao Li,Qiang Hou,Fei Chen,Zhongmin Ou,Jun-Yi Ge,Shixun Cao,Jincang Zhang 한국물리학회 2019 Current Applied Physics Vol.19 No.4

Bulk samples of K doping K2xFeTe1-xSx with x=0.07, 0.1, 0.2, 0.3 are successfully prepared by using easy-to-use stable compound K2S as the reactant. The lattice constant calculated from X-ray diffraction patterns indicate that K ions enter the Fe-Te-S layers. K doping is beneficial enhance the superconductivity transition temperature from the R-T curves. The apparent diamagnetic signal is observed in M-T curves when the content of K is smaller than 0.1. However, differential curves (dM/dT) in K-rich samples appear sharp slope mutations, which means that the Meissner effect signal is covered by the increased excess ferromagnetic ions. The number of excess Fe magnetic ions is proportional to K content, which may play an important role in determining the superconductivity.