http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Ni and CoO spin cantings induced by Fe layer in Ni/CoO/Fe/vicinal MgO(001)
Li, Q.,Yang, M.,N'Diaye, A. T.,Dong, Q. Y.,Scholl, A.,Young, A. T.,Gao, N.,Arenholz, E.,Hwang, C.,Li, J.,Qiu, Z. Q. American Physical Society 2017 Physical Review B Vol.96 No.21
<P>Using element-resolved x-raymagnetic circular dichroism and x-raymagnetic linear dichroism measurements, we studied Ni/CoO/vicinal MgO(001) and Ni/CoO/Fe/vicinal MgO(001) systems at 350 and 78 K. Above the CoO Neel temperature, the Ni magnetization is fully in plane and parallel to the atomic steps in both systems due to step-induced magnetic anisotropy. Below the CoO Neel temperature, the CoO spins in Ni/CoO/vicinal MgO(001) are fully in plane and parallel to the atomic steps and the Ni magnetization is fully in plane and perpendicular to the atomic steps due to the 90 degrees Ni/CoO magnetic coupling. The CoO spins in Ni/CoO/Fe/vicinal MgO(001), however, develop an out-of-plane canted spin component in addition to the in-plane component parallel to the atomic steps. Consequently, the Ni magnetization is canted towards the out-of-plane direction by an appreciable angle. Photoemission electron microscopy imaging shows a 90 degrees interfacial magnetic coupling at both the Ni/CoO and the CoO/Fe interfaces and an absence of a direct interlayer coupling, showing that the Ni spin canting is due to its coupling to the canted CoO spin components which is caused by the underlying ferromagnetic Fe layer in Ni/CoO/Fe/vicinal MgO(001).</P>
Activation of antiferromagnetic domain switching in exchange-coupled Fe/CoO/MgO(001) systems
Li, Q.,Chen, G.,Ma, T. P.,Zhu, J.,N'Diaye, A. T.,Sun, L.,Gu, T.,Huo, Y.,Liang, J. H.,Li, R. W.,Won, C.,Ding, H. F.,Qiu, Z. Q.,Wu, Y. Z. American Physical Society 2015 Physical review. B, Condensed matter and materials Vol.91 No.13
Field dependence of antiferromagnetic domain switching in epitaxial Fe/CoO/MgO(001) systems
Li, Q.,Ma, T. P.,Yang, M.,Sun, L.,Huang, S. Y.,Li, R. W.,Won, C.,Qiu, Z. Q.,Wu, Y. Z. American Physical Society 2017 Physical Review B Vol.96 No.2
<P>Utilizing the magneto-optic Kerr effect and Kerr microscopy measurements, we investigated the antiferro-magnetic (AFM) domain switching process at different magnetic fields in a single-crystalline Fe/CoO bilayer grown on MgO(001) substrate. In spite of the zero-net magnetic moment in the CoO layer, we find that the activation energy barrier of CoO AFM domain switching decreased at larger magnetic field. To separate the different behaviors of domain nucleation and domain wall motion during the CoO spin switching process, a new analytical method was developed. Using this method, we found that the CoO domain nucleation energy barrier exhibited a jump at a critical magnetic field while the CoO domain wall motion experienced only a tiny energy barrier variation. The field-dependent behaviors of the energy barriers were attributed to the formation of a spiral domain wall in the Fe layer during its magnetization reversal and this was supported by micromagnetic simulations.</P>
Yang, M.,Li, Q.,N'Diaye, A.T.,Dong, Q.Y.,Gao, N.,Arenholz, E.,Hwang, C.,Wu, Y.Z.,Qiu, Z.Q. Elsevier 2018 Journal of magnetism and magnetic materials Vol.460 No.-
<P><B>Abstract</B></P> <P>Using X-ray Magnetic Linear Dichroism (XMLD) measurement, we investigate the antiferromagnetic (AFM) NiO spin reorientation transition (SRT) in epitaxial NiO/CoO/MgO(0 0 1) system at room temperature and constructed a complete NiO spin phase diagram. Then utilizing Magneto-Optic Kerr Effect (MOKE) combined with a rotation magnetic field (ROTMOKE), we investigated the effect of NiO SRT on the magnetic anisotropy of a ferromagnetic (FM) Py overlayer in Py/NiO/CoO/MgO(0 0 1) system. We find that the Py coercivity and anisotropy only slightly enhanced for Py on top of out-of-plane NiO spins but greatly enhanced for Py on top of in-plane NiO spins. Both the uniaxial and fourfold anisotropies of the Py showed a clear dependence on the NiO spin orientation.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Spin reorientation transition (SRT) of antiferromagnetic NiO. </LI> <LI> Direct measurement of antiferromagnetic spins using XMLD. </LI> <LI> Quantitative determination of Py magnetic anisotropy using ROTMOKE. </LI> <LI> Demonstration of the effect of the NiO SRT on the Py magnetic anisotropy. </LI> </UL> </P>
Z. P. Zhang,J. D. Liu,K. Q. Qiu,Y. Y. Huang,J. G. Li,X. G. Wang,J. L. Liu,M. Wang,M. K. Zou,Y. Z. Zhou 대한금속·재료학회 2023 METALS AND MATERIALS International Vol.29 No.2
A novel fourth-generation nickel-based single crystal superalloy was bonded by vacuum brazing at 1230 °C, 1260 °C and1290 °C for 60 min using a new type of Co-based filler alloy. The effects of the brazing temperature on the microstructureand mechanical properties of the brazed joint were investigated. The brazed joint was mainly composed of the non-isothermalsolidification zone (M3B2 type-boride, CrB boride, Ni3Bboride and MC carbide), isothermal solidification zone (γ and γ'Phase) and base metal. With the increase of brazing temperature, the volume fraction of borides and γ' phase in the centerof the joint decreased and increased, respectively. The high-temperature tensile test results show that the tensile strength ofthe joints was improved with increasing brazing temperature, and the maximum tensile strength of the joint was 766 MPaafter brazing at 1290 °C for 60 min. Fracture observation shows that the fracture modes of the joints were the same, whichbelongs to the typical quasi cleavage fracture. The element distribution in the joint was homogenized to a certain extent at1290 °C. The segregation of Si and Ru was found, but they were still dissolved in the γ solid solution. The experimentalresults help to better understand the microstructure characteristics of the novel fourth-generation nickel-based single crystalsuperalloy and provide guidance for further optimizing the process parameters of the brazed joint.
L. P. Zhu,X. Q. Gu,H. P. He,F. Huang,M. X. Qiu,Z. Z. Ye,Y. Z. Zhang,B. H. Zhao 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.5
A ZnO/Zn0.85Mg0.15O single quantum well (SQW) was fabricated on a Si(111) substrate by using a pulsed laser deposition (PLD) technique. Photoluminescence (PL) measurements were carried out in the range of 10 − 290 K in order to investigate the mechanism of carrier dynamics. At 10 K, the sample exhibited two predominant ultraviolet emissions, one at 3.57 eV and the other at 3.38 eV, which were attributed to recombinations of localized excitons (LE band) in the barrier and the well layers, respectively. The quantum well emission showed a blue shift of nearly 20 meV with respect to the epitaxial ZnO films. We also observed that the carrier localization resulted in an “S-shaped” red-blue-red shift of the ∽3.38 eV emission with increasing temperature. A ZnO/Zn0.85Mg0.15O single quantum well (SQW) was fabricated on a Si(111) substrate by using a pulsed laser deposition (PLD) technique. Photoluminescence (PL) measurements were carried out in the range of 10 − 290 K in order to investigate the mechanism of carrier dynamics. At 10 K, the sample exhibited two predominant ultraviolet emissions, one at 3.57 eV and the other at 3.38 eV, which were attributed to recombinations of localized excitons (LE band) in the barrier and the well layers, respectively. The quantum well emission showed a blue shift of nearly 20 meV with respect to the epitaxial ZnO films. We also observed that the carrier localization resulted in an “S-shaped” red-blue-red shift of the ∽3.38 eV emission with increasing temperature.