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Debdulal Roy,M. E. Welland,S. H. Leong 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.1
A reflection-mode, apertureless (scattering type) scanning near-field optical icroscope (SSNOM) in reflection geometry with a tip focus monitoring facility has been developed and used for imaging dielectric contrast at the nanoscale in both direct-detection and heterodyne interferometric mode. The approach curves (plot of near-field signal with tip-sample separation) were obtained and these were used to predict extent of near-field signal collection. The quality of the images obtained by adopting the heterodyne interferometric technique has been compared with those obtained by direct detection. For the former, independent phase imaging was also possible and performed.
Linda Duffy,Bahman Baluch,Sarah Welland,Evren Raman 한국운동재활학회 2017 JER Vol.13 No.3
The presented study investigated the extent to which engaging in a therapeutic sporting programme in males with severe autism spectrum disorder (ASD) improves the debilitating behaviours commonly associ-ated with ASD. Furthermore, the views of parents of the autistic partici-pants were assessed concerning the effectiveness of the programme. Participants were eight 13- to 20-year-old males born in the United Kingdom from a school and sports college for pupils with severe learn-ing difficulties. The selection was using volunteer sampling from the “Monday Club” initiative, run by Saracens Sports Foundation in part-nership with a local school and specialist sports college. The Gilliam Autism Rating Scale, 3rd edition was administered to identify and mea-sure the severity of ASD behaviours at four time periods namely: at pro-gramme entry as the baseline (Time 1, T1), a second time after 8 weeks (Time 2, T2), a third time after 16 weeks (Time 3, T3), and a fourth time post programme (Time 4, T4). The results showed that for the more se-vere cases of ASD (Autism Index >101) there was no positive change in subscale performance from T1 to T2. For milder cases (Autism Index, 71.100) there were subtle non-significant improvements on the sub-scale scores from T1 to T2. Of the 6 subscales at T2, emotional respons-es, cognitive style, and maladaptive speech approached significance at the P=0.05 level. At T3 and T4, there was also no statistically significant improvement in ASD behaviours compared to the baseline for either condition. Finally parents’ were “very satisfied” with their child’s partici-pation in the physical activity programme.
Nikhil Tiwale,Satyaprasad P. Senanayak,Juan Rubio-Lara,Yury Alaverdyan,Mark E. Welland 대한금속·재료학회 2019 ELECTRONIC MATERIALS LETTERS Vol.15 No.6
Solution processing of metal oxide-based semiconductors is an attractive route for low-cost fabrication of thin flms devices. ZnO thin flms were synthesized from one-step spin coating-pyrolysis technique using zinc neodecanoate precursor. X-raydifraction (XRD), UV–visible optical transmission spectrometry and photoluminescence spectroscopy suggested conversionto polycrystalline ZnO phase for decomposition temperatures higher than 400 °C. A 15 % precursor concentration was foundto produce optimal TFT performance on annealing at 500 °C, due to generation of sufcient charge percolation pathways. Thedevice performance was found to improve upon increasing the annealing temperature and the optimal saturation mobility of0.1 cm2V−1 s−1 with ION/IOFF ratio~107was achieved at 700 °C annealing temperature. The analysis of experimental resultsbased on theoretical models to understand charge transport envisaged that the grain boundary depletion region is major sourceof deep level traps and their efective removal at increased annealing temperature leads to evolution of transistor performance.
Jo, Gunho,Hong, Woong-Ki,Sohn, Jung Inn,Jo, Minseok,Shin, Jiyong,Welland, Mark E.,Hwang, Hyunsang,Geckeler, Kurt E.,Lee, Takhee WILEY-VCH Verlag 2009 Advanced Materials Vol.21 No.21
<B>Graphic Abstract</B> <P>A new layout of complementary logic circuits based on p-channel carbon nanotube and n-channel zinc oxide nanowire transistors is presented, providing a hybrid approach to combine advantageous characteristic functions for the modulation of the current and operating voltage in transistors through proton radiation-generated charges, which allow a simple way to design favorable logic circuits. <img src='wiley_img/09359648-2009-21-21-ADMA200803510-content.gif' alt='wiley_img/09359648-2009-21-21-ADMA200803510-content'> </P>
Hong, Woong-Ki,Jo, Gunho,Sohn, Jung Inn,Park, Woojin,Choe, Minhyeok,Wang, Gunuk,Kahng, Yung Ho,Welland, Mark E.,Lee, Takhee American Chemical Society 2010 ACS NANO Vol.4 No.2
<P>We demonstrated a controllable tuning of the electronic characteristics of ZnO nanowire field effect transistors (FETs) using a high-energy proton beam. After a short proton irradiation time, the threshold voltage shifted to the negative gate bias direction with an increase in the electrical conductance, whereas the threshold voltage shifted to the positive gate bias direction with a decrease in the electrical conductance after a long proton irradiation time. The electrical characteristics of two different types of ZnO nanowires FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate and photoluminescence (PL) studies of the ZnO nanowires provide substantial evidence that the experimental observations result from the irradiation-induced charges in the bulk SiO<SUB>2</SUB> and at the SiO<SUB>2</SUB>/ZnO nanowire interface, which can be explained by a surface-band-bending model in terms of gate electric field modulation. Our study on the proton-irradiation-mediated functionalization can be potentially interesting not only for understanding the proton irradiation effects on nanoscale devices, but also for creating the property-tailored nanoscale devices.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/ancac3/2010/ancac3.2010.4.issue-2/nn9014246/production/images/medium/nn-2009-014246_0006.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nn9014246'>ACS Electronic Supporting Info</A></P>
Density control of ZnO nanowires grown using Au-PMMA nanoparticles and their growth behavior
Shin, Hyeon Suk,Sohn, Jung Inn,Kim, Dong Chung,Huck, Wilhelm T S,Welland, Mark E,Choi, Hee Cheul,Kang, Dae Joon IOP Pub 2009 Nanotechnology Vol.20 No.8
<P>Au nanoparticles stabilized by poly(methyl methacrylate) (PMMA) were used as a catalyst to grow vertically aligned ZnO nanowires (NWs). The density of ZnO NWs with very uniform diameter was controlled by changing the concentration of Au-PMMA nanoparticles (NPs). The density was in direct proportion to the concentration of Au-PMMA NPs. Furthermore, the growth process of ZnO NWs using Au-PMMA NPs was systematically investigated through comparison with that using Au thin film as a catalyst. Au-PMMA NPs induced polyhedral-shaped bases of ZnO NWs separated from each other, while Au thin film formed a continuous network of bases of ZnO NWs. This approach provides a facile and cost-effective catalyst density control method, allowing us to grow high-quality vertically aligned ZnO NWs suitable for many viable applications. </P>
Sohn, Jung Inn,Joo, Heung Jin,Ahn, Docheon,Lee, Hyun Hwi,Porter, Alexandra E,Kim, Kinam,Kang, Dae Joon,Welland, Mark E American Chemical Society 2009 NANO LETTERS Vol.9 No.10
<P>We demonstrate that the Mott metal-insulator transition (MIT) in single crystalline VO(2) nanowires is strongly mediated by surface stress as a consequence of the high surface area to volume ratio of individual nanowires. Further, we show that the stress-induced antiferromagnetic Mott insulating phase is critical in controlling the spatial extent and distribution of the insulating monoclinic and metallic rutile phases as well as the electrical characteristics of the Mott transition. This affords an understanding of the relationship between the structural phase transition and the Mott MIT.</P>