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Review on Cu2SnS3, Cu3SnS4, and Cu4SnS4 thin films and their photovoltaic performance
Vasudeva Reddy Minnam Reddy,Mohan Reddy Pallavolu,Phaneendra Reddy Guddeti,Sreedevi Gedi,Kishore Kumar Yarragudi Bathal Reddy,Babu Pejjai,김우경,Thulasi Ramakrishna Reddy Kotte,박진호 한국공업화학회 2019 Journal of Industrial and Engineering Chemistry Vol.76 No.-
The rapid progress on the Cu–Sn–S (Cu2SnS3, Cu3SnS4, and Cu4SnS4) solar cells has opened a new avenueto generate the electrical energy at ultra-low-cost. Therefore, the progress in the deposition of Cu2SnS3,Cu3SnS4, and Cu4SnS4 thinfilms by various chemical and physical methods is reviewed comprehensively. This article briefly describes (i) the phase diagrams of Cu–Sn–S, (ii) the bulk properties of Cu2SnS3,Cu3SnS4, and Cu4SnS4, (iii) the effect of deposition conditions on the phase formation, (iv) the physicalproperties of Cu2SnS3, Cu3SnS4, and Cu4SnS4 thinfilms, and (v) the photovoltaic performance of Cu2SnS3,Cu3SnS4, and Cu4SnS4 solar cells.
Minnam Reddy, Vasudeva Reddy,Cho, Haeyun,Gedi, Sreedevi,Reddy, K.T. Ramakrishna,Kim, Woo Kyoung,Park, Chinho Elsevier 2019 JOURNAL OF ALLOYS AND COMPOUNDS Vol.806 No.-
<P><B>Abstract</B></P> <P>Earth-abundant tin monosulfide (SnS) thin films have attracted considerable interest for eco-friendly and low-cost thin film solar cells. However, less attention has been paid on the fabrication of SnS solar cell by the industrial processes. In view of that the current study aimed to fabricate the SnS solar cells via two-stage (sputtering + sulfurization) industrial process. For the preparation of SnS thin films, first tin metallic precursor layers were deposited by DC sputtering and then sulfurized using the rapid thermal effusion cell evaporation process. The effect of sulfurization temperature on the physical properties of SnS thin films and the efficiency of SnS solar cells was examined. Formation of the single phase SnS thin films was confirmed when the tin metallic precursor layers sulfurized in the range of 450–470 °C, whereas secondary phases of Sn, SnS<SUB>2</SUB>, and Sn<SUB>2</SUB>S<SUB>3</SUB> were noticed at the sulfurization temperature lower than 450 °C and re-evaporation of deposited SnS thin films was observed at the sulfurization temperature higher than 470 °C. Solar cell fabricated with SnS absorber sulfurized at a temperature of 470 °C showed the conversion efficiency of ∼ 2.3%. The causes for lower efficiency of these solar cells were recombination in the SnS absorber and non-uniform compositional distribution of Cd, S and Sn as a function of depth in the CdS/SnS/Mo structure.</P> <P><B>Highlights</B></P> <P> <UL> <LI> SnS films were grown via sulfurization using effusion cell evaporation method. </LI> <LI> Effect of sulfurization temperature on the efficiency of SnS solar cells was examined. </LI> <LI> A high efficiency of ∼2.3% for SnS solar cells was achieved at 470 °C. </LI> <LI> The causes for lower efficiency of these solar cells were investigated. </LI> </UL> </P>
Development of sulphurized SnS thin film solar cells
MINNAM REDDY VASUDEVA REDDY,Sreedevi Gedi,박진호,Miles R.W,Ramakrishna Reddy K.T 한국물리학회 2015 Current Applied Physics Vol.15 No.5
Thin films of tin sulphide (SnS) have been grown by sulphurization of sputtered tin precursor layers in a closed chamber. The effect of sulphurization temperature (Ts) that varied in the range of 150-450 ℃ for a fixed sulphurization time of 120 min on SnS film was studied through various characterization techniques. X-ray photoelectron spectroscopy analysis demonstrated the transformation of metallic tin layers into SnS single phase for Ts between 300 ℃ and 350 ℃. The X-ray diffraction measurements indicated that all the grown films had the (111) crystal plane as the preferred orientation and exhibited orthorhombic crystal structure. Raman analysis showed modes at 95 cm-1, 189 cm-1 and 218 cm-1 are related to the Ag mode of SnS. AFM images revealed a granular change in the grain growth with the increase of Ts. The optical energy band gap values were estimated using the transmittance spectra and found to be varied from 1.2 eV to 1.6 eV with Ts. The Hall effect measurements showed that all the films were p-type conducting nature and the layers grown at 350 ℃ showed a low electrical resistivity of 64 Ω-cm, a net carrier concentration of 2 × 1016 cm3 and mobility of 41 cm2 V-1 s-1. With the use of sprayed Zn0.76Mg0.24O as a buffer layer and the sputtered ZnO:Al as window layer, the SnS based thin film solar cell was developed that showed a conversion efficiency of 2.02%.
Influence of deposition temperature on the efficiency of SnS solar cells
Gedi, Sreedevi,Minnam Reddy, Vasudeva Reddy,Alhammadi, Salh,Reddy Guddeti, Phaneendra,Kotte, Tulasi Ramakrishna Reddy,Park, Chinho,Kim, Woo Kyoung Elsevier Science B.V., Amsterdam. 2019 SOLAR ENERGY -PHOENIX ARIZONA THEN NEW YORK- Vol.184 No.-
<P><B>Abstract</B></P> <P>In this paper, studies on the photovoltaic performance of the orthorhombic SnS device with respect to bath temperature are reported. Firstly, the effect of bath temperature on the physical properties of SnS layers was analyzed using appropriate characterization techniques. The deposited films exhibited an orthorhombic crystal structure with an intense (1 1 1) reflection of SnS. The band gap of 1.3 eV for good solar radiation absorption and a minimum value of electrical resistivity of 38 Ω-cm for easy carrier transport were obtained at 70 °C. In addition, the films had compact morphology with uniformly distributed large grains of approximately 220 nm. Finally, the optimal SnS absorber exhibited a high efficiency of 0.94%. This work gives a new insight into the efficient deposition of SnS solar absorbers with low material wastage and low environmental pollution.</P> <P><B>Highlights</B></P> <P> <UL> <LI> SnS films prepared by cost effective technique CBD. </LI> <LI> Bath temperature was optimized for PV absorber. </LI> <LI> Single phase orthorhombic SnS films with good morphology were prepared. </LI> <LI> SnS solar cell showed a conversion efficiency of 0.94%. </LI> <LI> The efficiency of present device is higher than reported CBD SnS (Orthorhombic)-devices. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>