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Modified Sliding Mode Control for Mismatched Uncertain Large-Scale Systems
Van Van Huynh,Bach Hoang Dinh 보안공학연구지원센터 2016 International Journal of Grid and Distributed Comp Vol.9 No.6
In this paper, a modified sliding mode control is proposed to stabilize a class of large-scale systems with mismatched uncertainties, unknown exogenous disturbances and without the measurements of the states. Based on the Lyapunov method, appropriate linear matrix inequality stability conditions are derived to guarantee the stability of the system. Then, a modified adaptive sliding mode control law is proposed to guarantee the finite time reachability of the system states by using output feedback only. Final, a double-inverted pendulums system connected by a spring is simulated to demonstrate the efficacy of the proposed method.
Huynh Van Thao,Bui Thi Chuyen,Pham Van Toan,Tran Sy Nam,Nguyen Van Cong 환경독성보건학회 2023 환경독성보건학회지 Vol.38 No.4
Fenobucarb is one of most common insecticides applied to rice crops in the Vietnamese Mekong Delta. Paddy fields are preferred habitats for snakehead fish (Channa striata). Therefore, the probability of exposure risks and growth effects is highly. This paper aimed to examine the effects of using fenobucarb based – Excel Basa 50EC on the brain cholinesterase (ChE) of snakehead fish. Two rice fields, in which a single dose of Excel Basa 50EC was applied to one field, whilst the other acted as a control. Each field was subdivided into three plots by earthen dikes. In each plot, one fish cage (1.2 m x 1.2 m x 1.2 m) was installed that was stocked with 20 snakehead fish. The Excel Basa 50EC was applied once at the indication dose. The results highlighted that the concentration of fenobucarb in water at 1 hr after application was 116.72 ppb ± 12.64, which decreased to 23.96 ± 6.61 ppb after d and then to below detection limits (0.02 ppb). For fish living in this field, no mortality was seen, but ChE was significantly inhibited for 31 % on the first day and recovery following 7 days of exposure. Residues of fenobucarb in soil and fish should also be investigated furthermore.
Van, Ngoc Huynh,Lee, Jae-Hyun,Whang, Dongmok,Kang, Dae Joon Springer Berlin Heidelberg 2015 Nano-micro letters Vol.7 No.1
<P>A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-type Si nanowire coated with omega-shaped gate organic ferroelectric poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)). We overcame the interfacial layer problem by incorporating P(VDF-TrFE) as a ferroelectric gate using a low-temperature fabrication process. Our memory devices exhibited excellent memory characteristics with a low programming voltage of ±5 V, a large modulation in channel conductance between ON and OFF states exceeding 10<SUP>5</SUP>, a long retention time greater than 3 × 10<SUP>4</SUP> s, and a high endurance of over 10<SUP>5</SUP> programming cycles while maintaining an <I>I</I><SUB>ON</SUB>/<I>I</I><SUB>OFF</SUB> ratio higher than 10<SUP>2</SUP>.</P>
Reliability analysis of Residual longitudinal strength of damaged ships.
Huynh Van-Vu,Cho Sang-Rai 대한조선학회 2011 대한조선학회 학술대회자료집 Vol.2011 No.6
In the present study, based on the value of residual longitudinal strength of damaged ships was predicted by the Smith's method, the reliability analysis has been carried out for both vertical and horizontal bending moments. The limit state function was derived based on the interaction equation. Four cases of still water bending moment and two Monte Carlo simulations which different samples have been performed. This study focused on Bulk Carrier and Double Hull VLCC in ISSC 2000.
Effect of longitudinal extents of damage on Residual longitudinal strength of damaged ships.
Huynh Van-Vu,Cho Sang-Rai 대한조선학회 2011 대한조선학회 학술대회자료집 Vol.2011 No.6
Based on the Smith's method, while calculating the residual longitudinal strength of damaged ship hull girders, the longitudinal extents of damage was not taken into account. Just only the two dimensional transverse section, which is transverse and vertical extents according to an assumption of rules, was considered. The longitudinal extent of damage assumed occurring on an overall length of bays. Therefore, for estimating the effect of longitudinal extents of damage, the residual longitudinal strength under vertical bending moment of damaged ships will be performed by a nonlinear finite element method (FEM) analysis which using many three dimensional models have taken as longitudinal extent of damage differences. This study has been analyzed on the commercial software ABAQUS with modified RIKS method and it to be applied on two models MST-3 and MSD of Nishihara experiments, the 1/3-scale Frigate model and the Double Hull VLCC in ISSC 2000.
Fairness CSMA/CA MAC Protocol for VLC Networks
Huynh, Vu Van,Jang, Yeong-Min The Institute of Internet 2012 Journal of Advanced Smart Convergence Vol.1 No.1
This paper presents a fair MAC protocol based on the CSMA/CA algorithm in visible light communication (VLC) networks. The problem of bandwidth sharing among differentiated priority in VLC networks can be solved by using number of backoff time and backoff exponent parameters with AIFS. The proposed algorithm can achieve fair allocation of the bandwidth resource among differentiated priority. The two dimension Markov chain is assisted for analyzing the proposed mechanism about throughput and delay metrics. Numerical results show that our proposed algorithm improves the fairness among different traffic flows.
Huynh Van, Ngoc,Lee, Jae-Hyun,Whang, Dongmok,Kang, Dae Joon The Royal Society of Chemistry 2015 Nanoscale Vol.7 No.27
<▼1><▼1><P>Nanowire-based ferroelectric-complementary metal–oxide–semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells.</P></▼1><▼2><P>Nanowire-based ferroelectric-complementary metal–oxide–semiconductor (NW FeCMOS) nonvolatile memory devices were successfully fabricated by utilizing single n- and p-type Si nanowire ferroelectric-gate field effect transistors (NW FeFETs) as individual memory cells. In addition to having the advantages of single channel n- and p-type Si NW FeFET memory, Si NW FeCMOS memory devices exhibit a direct readout voltage and ultralow power consumption. The reading state power consumption of this device is less than 0.1 pW, which is more than 10<SUP>5</SUP> times lower than the ON-state power consumption of single-channel ferroelectric memory. This result implies that Si NW FeCMOS memory devices are well suited for use in non-volatile memory chips in modern portable electronic devices, especially where low power consumption is critical for energy conservation and long-term use.</P></▼2></▼1>