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2.5-Gb/s/ch Long Wavelength Transmitter Modules for Chip-to-Chip Optical PCB Applications
Ukaegbu, I. A.,Do-Won Kim,Mu Hee Cho,Tae-Woo Lee,Hyo-Hoon Park IEEE 2011 Photonics Technology Letters Vol.23 No.19
<P>We have fabricated 2.5-Gb/s/ch long wavelength optical transmitter modules in planar and multichip module structures for chip-to-chip optical printed-circuit board (OPCB) applications. Their performance has been analyzed and compared with two types of short wavelength structures. The long wavelength multichip module showed a 3-dB bandwidth of 2.46 GHz while the planar showed 2.16 GHz. The modules showed clear eye openings at 2.5 Gb/s with a bit-error rate less than 10<SUP>-12</SUP> and can be used for optical interconnections in OPCBs.</P>
Small-area and high-inductance semi-stacked spiral inductor with high Q factor
Ukaegbu, I. A.,Choi, K-S,Hidayov, O.,Sangirov, J.,Lee, T-W,Park, H-H IET 2012 IET microwaves, antennas & propagation Vol.6 No.8
<P>In this study, the authors describe the characterisation of spiral inductors and the design of a novel semi-stacked spiral inductor based on low-temperature co-fired ceramics (LTCC). Owing to its semi-stacked nature, the authors obtained a peak quality factor (<I>Q</I><SUB>max</SUB>) of 43.3 and an effective inductance <I>L</I><SUB>eff</SUB> of 14.41 nH. The authors LTCC spiral inductor occupies a smaller area when compared with conventional LTCC planar inductors of similar number of turns.</P>
A Study of Ferroelectric Properties of the Oscillator Model of PZT-22
Ikechi Augustine Ukaegbu,Vladimir Nikolaevich Borodulin 한국전자통신연구원 2011 ETRI Journal Vol.33 No.1
In this letter, we study the contemporary technologies for making ferroelectric films and the possibility of using the oscillator model of PZT-22 to analyze its ferroelectric properties. The material showed permittivity dispersion at 65 KHz and 88.5 KHz. We obtained relative attenuation γ, relaxation time τ, and max of the material as 0.0008319, 0.5 s, and 603.438, respectively.
Jamshid Sangirov,Ikechi Augustine Ukaegbu,Tae-Woo Lee,Mu Hee Cho,박효훈 한국전자통신연구원 2012 ETRI Journal Vol.34 No.1
A video signal through a high-density optical link has been demonstrated to show the reliability of optical link for high- data-rate transmission. To reduce optical point-to-point links, an electrical link has been utilized for control and clock signaling. The latency and flicker with background noise occurred during the transferring of data across the optical link due to electrical-to-optical with optical-to-electrical conversions. The proposed synchronization technology combined with a flicker and denoising algorithm has given good results and can be applied in high-definition serial data interface (HD-SDI), ultra-HD-SDI, and HD multimedia interface transmission system applications.
On-chip temperature compensation for optical transmitter modules
Sangirov, J.,Park, T-W,Ukaegbu, I. A.,Lee, T-W,Park, H-H IET 2013 Electronics letters Vol.49 No.3
<P>On-chip temperature compensation (TC) for optical transmitter (Tx) modules is reported. The TC block is integrated in common silicon (Si)-substrate with the Tx and demonstrates the ability to maintain a constant VCSEL output light power without an additional monitoring photodiode. Designed and fabricated in a 0.13 μm technology, the Tx with a TC block operates at up to 5 Gbit/s. A BER of less than 10<SUP>-12</SUP> is achieved at a received input power of - 3 dBm, with a 1.3 dBm variation of received power for a temperature increase of 20-100°C at 5 Gbit/s data rate. The percentage error of the temperature compensated Tx output light power is ± 3%. The Tx module consumes a power of 20 mW at 1.3 V, including the TC block.</P>
10 Gbps Transimpedance Amplifier-Receiver for Optical Interconnects
Jamshid Sangirov,이태우,박효훈,Ikechi Augustine Ukaegbu,조무희 한국광학회 2013 Current Optics and Photonics Vol.17 No.1
A transimpedance amplifier (TIA)-optical receiver (Rx) using two intersecting active feedback system with regulated-cascode (RGC) input stage has been designed and implemented for optical interconnects. The optical TIA-Rx chip is designed in a 0.13 μm CMOS technology and works up to 10 Gbps data rate. The TIA-Rx chip core occupies an area of 0.051 mm2 with power consumption of 16.9 mW at 1.3V. The measured input-referred noise of optical TIA-Rx is 20 pA/√Hz with a 3-dB bandwidth of 6.9 GHz. The proposed TIA-Rx achieved a high gain-bandwidth product per DC power figure of merit of 408 GHzΩ/mW.