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Anti-Reflection Properties of In-Situ Doped Spin-On Film
U. Gangopadhyay,Kim, Kyung-Hae,Park, J.H.,S.K. Dhungel,D. Mangalaraj,J. Yi,H. Saha,Kim, D.W. The Korean Institute of Electrical and Electronic 2003 Transactions on Electrical and Electronic Material Vol.4 No.6
Anti-reflection properties of post diffusion doped spin-on source (in-situ AR coating) have been investigated in some detail. A simple experiment for reflectivity study using oblique incidence of light and necessary modification of the theory of minimum reflectivity at oblique incidence has been established. The comparative study of the in-situ AR coating with available spin-on AR film on silicon Solar Cell Surface have been investigated.
Porous Silicon as Pressure Sensing Material
U. Gangopadhyay,이준신,C. Pramanik,H. Saha,김경해 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.3
In this paper, the pressure-sensing property of porous silicon is reported. The motivation behind this study is to modify silicon to make it more sensitive in the low-pressure range. The sensitivity of a porous silicon membrane towards pressure has been studied and observed to be three times greater than that of mono-crystalline silicon, since there is the possibility of improvement in piezoresistance due to quantum confinement in the porous silicon nanostructure. The piezoresistive coefficient of porous silicon has also been estimated from experimental observations and stress calculations.
Biracial Silicon Solar Cells with Spin-on Doping and Electroless Plating
U. Gangopadhyay,Kim, Kyung-Hae,S.K. Dhungel,D. Mangalaraj,Park, J.H.,J. Yi The Korean Institute of Electrical and Electronic 2004 Transactions on Electrical and Electronic Material Vol.5 No.1
A new method for fabrication of transistor like structure of the bifacial solar cell using spin-on doping and electroless plating has been proposed and the basic characteristics of the bifacial cell have been investigated. It is found that 9% increase in short circuit current is achieved with bifacial connection than the unifacial connection. Some unwanted effect of the series resistance on collection efficiency under different mode of illumination has been pointed out. Loss mechanisms inherent in the transistor like bifacial structure have also been discussed.
Gangopadhyay, U,Dhungel, S K,Kim, K,Manna, U,Basu, P K,Kim, H J,Karunagaran, B,Lee, K S,Yoo, J S,Yi, J Institute of Physics 2005 Semiconductor science and technology Vol.20 No.9
<P>Multi-crystalline silicon surface etching without grain-boundary delineation is a challenging task for the fabrication of high efficiency solar cells. The use of sodium hydroxide–sodium hypochlorite (NaOH–NaOCl) solution for texturing a multi-crystalline silicon wafer surface in a solar cell fabrication line is reported in this paper. The optimized etching solution of NaOH–NaOCl does not have any effect on multi-crystalline silicon grain boundaries and it also has excellent isotropic etch characteristics, which ultimately helps to achieve higher values of performance parameters, especially the open circuit voltage (<I>V</I><SUB>oc</SUB>) and fill factor (FF), than those in the case of conventional silicon texturing. Easy control over the reaction of the NaOH–NaOCl solution is also one of the major advantages due to which sophistication in controlling the temperature of the etching bath is not required for the industrial batch process. The FTIR analysis of the silicon surface after etching with the current approach shows the formation of Si–Cl bonds, which improves the quality of the diffused junction due to chlorine gettering during diffusion. We are the first to report 14–14.5% efficiency of very large area (150 mm ? 150 mm) multi-crystalline silicon solar cells using a NaOH–NaOCl texturing approach in an industrial production line with a yield greater than 95%.</P>
Current Status of Layer Transfer Process in Thin Silicon Solar Cell : a review
U. Gangopadhyay,K. Chakrabarty,S.K. Dhungel,Kim, Kyung-Hae,Yi, Jun-Sin,D. Majumdar,H. Saha The Korean Institute of Electrical and Electronic 2004 Transactions on Electrical and Electronic Material Vol.5 No.2
Layer transfer process has emerged as a promising tool in the field of thin silicon solar cell technology. This process can use mono-crystalline silicon as a surface for the epitaxial growth of a thin layer of silicon. It requires some sort of surface conditioning of the substrate due to which the surface become suitable for homo-epitaxy and lift off after solar cell fabrication. The successful reuse of substrate has been reported. The use of the conditioned surface without any kind of epitaxial layer growth is also the issue to be addressed. This review paper basically describes the five most cost effective methods on which works are in progress. Several types of possible problems envisaged by different research groups are also incorporated here with necessary discussion. Work in Korea has already started in this area in collaboration IC Design and Fabrication Centre, Jadavpur University, India and that also has been mentioned.
Bifacial Silicon Solar Cells with Spin-on Doping and Electroless Plating
U. Gangopadhyay,김경해,S. K. Dhungel,D. Mangalaraj,J. H. Park,이준신 한국전기전자재료학회 2004 Transactions on Electrical and Electronic Material Vol.5 No.1
A new method for fabrication of transistor like structure of the bifacial solar cell using spin-on doping and electroless plating has been proposed and the basic characteristics of the bifacial cell have been investigated. It is found that 9% increase in short circuit current is achieved with bifacial connection than the unifacial connection. Some unwanted effect of the series resistance on collection efficiency under different mode of illumination has been pointed out. Loss mechanisms inherent in the transistor like bifacial structure have also been discussed.
U. Gangopadhyay,Kim, Kyung-Hea,S.K. Dhungel,D. Mangalaraj,Park, J.H.,J. Yi The Korean Institute of Electrical and Electronic 2004 Transactions on Electrical and Electronic Material Vol.5 No.1
Zinc sulfide is a semiconductor with wide band gap and high refractive index and hence promising material to be used as ARC on commercial silicon solar cells. Uniform deposition of zinc sulfide (ZnS) by using chemical bath deposition (CBD) method over a large area of silicon surface is an emerging field of research because ZnS film can be used as a low cost antireflection coating (ARC). The main problem of the CBD bath process is the huge amount of precipitation that occurs during heterogeneous reaction leading to hamper the rate of deposition as well as uniformity and chemical stoichiometry of deposited film. Molar concentration of thiorea plays an important role in varying the percentage of reflectance and refractive index of as-deposited CBD ZnS film. Desirable rate of film deposition (19.6 ${\AA}$ / min), film uniformity (Std. dev. < 1.8), high value of refractive index (2.35), low reflectance (0.655) have been achieved with proper optimization of ZnS bath. Decrease in refractive index of CBD ZnS film due to high temperature treatment in air ambiance has been pointed out in this paper. Solar cells of conversion efficiency 13.8 % have been successfully achieved with a large area (103 mm ${\times}$ 103 mm) mono-crystalline silicon wafers by using CBD ZnS antireflection coating in this modified approach.
U. Gangopadhyay,Kim, Kyung-Hae,S.K. Dhungel,D. Mangalaraj,Park, J.H.,J. Yi The Korean Institute of Electrical and Electronic 2003 Transactions on Electrical and Electronic Material Vol.4 No.5
A low-cost, large area, random, maskless texturing scheme independent of crystal orientation is expected to have significant impact on terrestrial photovoltaic technology. We investigated silicon surface microstructures formed by reactive ion etching (R IE) in Multi-Hollow cathode system. Desirable texturing effect has been achieved when radio-frequency (rf) power of about 20 Watt per one hollow cathode glow is applied for our RF Multi -Hollow cathode system. The black silicon etched surface shows almost zero reflectance in the visible region as well as in near IR region. The etched silicon surface is covered by columnar microstructures with diameters from 50 to 100 nm and depth of about 500 nm. We have successfully achieved 11.7 % efficiency of mono-crystalline silicon solar cell and 10.2 % for multi-crystalline silicon solar cell.
Screen printed contacts formation by rapid thermal annealing in multicrystalline silicon solar cells
Kyung hae Kim,U. Gangopadhyay,Chang soon Han,K. Chakrabarty,J. Yi 한국진공학회(ASCT) 2002 Journal of Korean Vacuum Science & Technology Vol.6 No.3
The aim of the present work is to optimized the annealing parameter in both front and back screen printed contacts realization on p-type multicrystalline silicon and with phosphorus diffused. The RTA treatments were carried out at various temperatures from 600 to 850℃ and annealing time ranging from 3 min to 5 min in air, O₂ and N₂ ambiance. The contacts parameters are obtained according to Transmission Line Model measurements. A good RTA cycle is obtained with a temperature plateau of 700℃ - 750℃ and annealing ambiance of air. Several processing parameters required for good cell efficiency are discussed with an emphasis placed on the critical role of the glass frit in the aluminum paste. A anamolus behaviour of Aluminum n-doping on p-type Si wafer, contact at high temperature have also been studied.