http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Case Reports : Acute Generalized Exanthematous Pustulosis Caused by Daptomycin
( Teoh Yee Leng ),( Mark Koh Jean Aan ),( Michelle Chan ),( Liu Tsun Tsien ) 대한피부과학회 2011 Annals of Dermatology Vol.23 No.3s
Daptomycin, a lipopeptide antibiotic with similar action as vancomycin, is used to treat complicated skin and soft tissue infections caused by resistant Gram-positive bacteria, including methicillin-resistant Staphylococcus aureus, penicillin-resistant streptococci, and vancomycin-resistant enterococci. Acute generalized exanthematous pustulosis (AGEP), characterized by acute onset of numerous sterile, non- follicular pinhead sized pustules, is common secondary to drugs, in particular, antibiotics. We present the first case of AGEP following the use of daptomycin. (Ann Dermatol 23(S3) S288~S289, 2011)
Harata, Nobutoshi C.,Choi, Sukwoo,Pyle, Jason L.,Aravanis, Alexander M.,Tsien, Richard W. Elsevier 2006 Neuron Vol.49 No.2
<P><B>Summary</B></P><P>The kinetics of exo-endocytotic recycling could restrict information transfer at central synapses if neurotransmission were entirely reliant on classical full-collapse fusion. Nonclassical fusion retrieval by kiss-and-run would be kinetically advantageous but remains controversial. We used a hydrophilic quencher, bromophenol blue (BPB), to help detect nonclassical events. Upon stimulation, extracellular BPB entered synaptic vesicles and quenched FM1-43 fluorescence, indicating retention of FM dye beyond first fusion. BPB also quenched fluorescence of VAMP (synaptobrevin-2)-EGFP, thus indicating the timing of first fusion of vesicles in the total recycling pool. Comparison with FM dye destaining revealed that kiss-and-run strongly prevailed over full-collapse fusion at low frequency, giving way to a near-even balance at high frequency. Quickening of kiss-and-run vesicle reuse was also observed at higher frequency in the average single vesicle fluorescence response. Kiss-and-run and reuse could enable hippocampal nerve terminals to conserve scarce vesicular resources when responding to widely varying input patterns.</P>
Acute Generalized Exanthematous Pustulosis Caused by Daptomycin
Teoh Yee Leng,Mark Koh Jean Aan,Michelle Chan,Liu Tsun Tsien 대한피부과학회 2011 Annals of Dermatology Vol.23 No.-
Daptomycin, a lipopeptide antibiotic with similar action as vancomycin, is used to treat complicated skin and soft tissue infections caused by resistant Gram-positive bacteria, including methicillin-resistant Staphylococcus aureus, penicillin-resistant streptococci, and vancomycin-resistant enterococci. Acute generalized exanthematous pustulosis (AGEP),characterized by acute onset of numerous sterile, nonfollicular pinhead sized pustules, is common secondary to drugs, in particular, antibiotics. We present the first case of AGEP following the use of daptomycin. (Ann Dermatol 23(S3) S288∼S289, 2011)
AMPA receptor exchange underlies transient memory destabilization on retrieval
Hong, Ingie,Kim, Jeongyeon,Kim, Jihye,Lee, Sukwon,Ko, Hyoung-Gon,Nader, Karim,Kaang, Bong-Kiun,Tsien, Richard W.,Choi, Sukwoo National Academy of Sciences 2013 PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF Vol.110 No.20
<P>A consolidated memory can be transiently destabilized by memory retrieval, after which memories are reconsolidated within a few hours; however, the molecular substrates underlying this destabilization process remain essentially unknown. Here we show that at lateral amygdala synapses, fear memory consolidation correlates with increased surface expression of calcium-impermeable AMPA receptors (CI-AMPARs), which are known to be more stable at the synapse, whereas memory retrieval induces an abrupt exchange of CI-AMPARs to calcium-permeable AMPARs (CP-AMPARs), which are known to be less stable at the synapse. We found that blockade of either CI-AMPAR endocytosis or NMDA receptor activity during memory retrieval, both of which blocked the exchange to CP-AMPARs, prevented memory destabilization, indicating that this transient exchange of AMPARs may underlie the transformation of a stable memory into an unstable memory. These newly inserted CP-AMPARs gradually exchanged back to CI-AMPARs within hours, which coincided with the course of reconsolidation. Furthermore, blocking the activity of these newly inserted CP-AMPARs after retrieval impaired reconsolidation, suggesting that they serve as synaptic “tags” that support synapse-specific reconsolidation. Taken together, our results reveal unexpected physiological roles of CI-AMPARs and CP-AMPARs in transforming a consolidated memory into an unstable memory and subsequently guiding reconsolidation.</P>
GluA1 phosphorylation at serine 831 in the lateral amygdala is required for fear renewal
Lee, Sukwon,Song, Beomjong,Kim, Jeongyeon,Park, Kyungjoon,Hong, Ingie,An, Bobae,Song, Sangho,Lee, Jiwon,Park, Sungmo,Kim, Jihye,Park, Dongeun,Lee, C Justin,Kim, Kyungjin,Shin, Ki Soon,Tsien, Richard W Nature Publishing Group, a division of Macmillan P 2013 NATURE NEUROSCIENCE Vol.16 No.10
Fear renewal, a widely pursued model of post-traumatic stress disorder and phobias, refers to the context-specific relapse of conditioned fear after extinction. However, its molecular mechanisms are largely unknown. We found that renewal-inducing stimuli, generally believed to be insufficient to induce synaptic plasticity, enhanced excitatory synaptic strength, activity of synaptic GluA2-lacking AMPA receptors and Ser831 phosphorylation of synaptic surface GluA1 in the lateral nucleus of the amygdala (LAn) of fear-extinguished rats. Consistently, the induction threshold for LAn synaptic potentiation was considerably lowered after extinction, and renewal occluded this low-threshold potentiation. The low-threshold potentiation (a potential cellular substrate for renewal), but not long-term potentiation, was attenuated by dialysis into LAn neurons of a GluA1-derived peptide that competes with Ser831-phosphorylated GluA1. Microinjections of the same peptide into the LAn attenuated fear renewal, but not fear learning. Our findings suggest that GluA1 phosphorylation constitutes a promising target for clinical treatment of aberrant fear-related disorders.
UHV/CVD i-Si epitaxy and ion implantation doping for sub-micrometer N−Collector of SiGeHBT
W. Zhang,H.W. Lin,L. Yue,C.C. Chen,Z.H. Liu,Y.S. Lu,W.Z. Dou,P.H. Tsien 한양대학교 세라믹연구소 2006 Journal of Ceramic Processing Research Vol.7 No.4
A method for sub-micrometer N−collector layer fabricated by Ultra-High Vacuum Chemical Vapor Deposition i-Si epitaxy and ion implantation doping is presented in this paper. The characteristics of this sub-micrometer N−collector layer are investigated. The Spreading Resistance Probe figures show that the transition region of the N−collector dopant profile is steep and the measure by an Atomic Force Microscope shows that the surface roughness is strongly related to the growth condition of the i-Si. The rocking curve by X-Ray Diffraction and the performance of SiGe Heterojunction Bipolar Transistor device demonstrate the good quality of the SiGe layer grown on this kind of N−collector layer. The BVcbo of the SiGeHBT with this sub-micrometer N−collector is 23.5V high, and the fT is 11 GHz. A method for sub-micrometer N−collector layer fabricated by Ultra-High Vacuum Chemical Vapor Deposition i-Si epitaxy and ion implantation doping is presented in this paper. The characteristics of this sub-micrometer N−collector layer are investigated. The Spreading Resistance Probe figures show that the transition region of the N−collector dopant profile is steep and the measure by an Atomic Force Microscope shows that the surface roughness is strongly related to the growth condition of the i-Si. The rocking curve by X-Ray Diffraction and the performance of SiGe Heterojunction Bipolar Transistor device demonstrate the good quality of the SiGe layer grown on this kind of N−collector layer. The BVcbo of the SiGeHBT with this sub-micrometer N−collector is 23.5V high, and the fT is 11 GHz.