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RISS 인기검색어
- 검색키워드
- 저자 : W.Z. Dou (검색결과 2 건)
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UHV/CVD i-Si epitaxy and ion implantation doping for sub-micrometer N−Collector of SiGeHBT
W. Zhang,H.W. Lin,L. Yue,C.C. Chen,Z.H. Liu,Y.S. Lu,W.Z. Dou,P.H. Tsien 한양대학교 세라믹연구소 2006 Journal of Ceramic Processing Research Vol.7 No.4
A method for sub-micrometer N−collector layer fabricated by Ultra-High Vacuum Chemical Vapor Deposition i-Si epitaxy and ion implantation doping is presented in this paper. The characteristics of this sub-micrometer N−collector layer are investigated. The Spreading Resistance Probe figures show that the transition region of the N−collector dopant profile is steep and the measure by an Atomic Force Microscope shows that the surface roughness is strongly related to the growth condition of the i-Si. The rocking curve by X-Ray Diffraction and the performance of SiGe Heterojunction Bipolar Transistor device demonstrate the good quality of the SiGe layer grown on this kind of N−collector layer. The BVcbo of the SiGeHBT with this sub-micrometer N−collector is 23.5V high, and the fT is 11 GHz. A method for sub-micrometer N−collector layer fabricated by Ultra-High Vacuum Chemical Vapor Deposition i-Si epitaxy and ion implantation doping is presented in this paper. The characteristics of this sub-micrometer N−collector layer are investigated. The Spreading Resistance Probe figures show that the transition region of the N−collector dopant profile is steep and the measure by an Atomic Force Microscope shows that the surface roughness is strongly related to the growth condition of the i-Si. The rocking curve by X-Ray Diffraction and the performance of SiGe Heterojunction Bipolar Transistor device demonstrate the good quality of the SiGe layer grown on this kind of N−collector layer. The BVcbo of the SiGeHBT with this sub-micrometer N−collector is 23.5V high, and the fT is 11 GHz.
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Xu, X.M.,Hua, J.L.,Jia, W.W.,Huang, W.,Yang, C.R.,Dou, Z.Y. Asian Australasian Association of Animal Productio 2007 Animal Bioscience Vol.20 No.10
These experiments were carried out to optimize the parameters of electrical activation, methods of parthenogenetic activation and embryo culture in vitro and meanwhile to isolate embryonic stem cells-like (ESCs) derived from porcine parthenogenetic blastocysts (pPBs). These results showed that, as the electric field strength increased from 1.0 to 2.7 kV/cm, the cleavage rate of parthenogenetic embryos increased gradually but the rate of oocyte lysis was significantly increased when using 2.7 kV/cm field strength. The rate of cleavage in 2.2 and 2.7 kV/cm groups was significantly increased in comparison with that of the 1.0 kV/cm group. A voltage field strength of 2.2 kV/cm DC was used to investigate blastocyst development following activation with a single pulse of 30 or $60-{\mu}sec$ pulse duration. The optimum pulse duration was 30-${\mu}sec$, with a blastocyst rate of 20.7%. Multiple pulses were inferior to a single pulse for blastocyst yield (8.0% vs. 29.9) (p<0.05). For porcine oocyte parthenogenetic activation methods, the rates of cleavage (79.0% vs. 59.8%) and blastocysts (19.4% vs. 3.4%) were significantly increased in electrical activation in contrast to chemical activation with ionomycin/6-DMAP (p<0.05). Rates of cleavage and blastocyst formation in NCSU-23 and PZM-3 embryo media were higher than those of G1.3/G2.3 serial culture media, but there was no significant difference among the three groups. The total cell number of blastocysts in PZM-3 embryo culture media containing $5{\mu}g/ml$ insulin was significantly higher than that of the control (no insulin) ($44.3{\pm}9.1$ vs. $33.9{\pm}11.7$). For isolation of PESCs-like, the rates of porcine blastocysts attached to feeder layers and ICM colony formation in Method B (nude embryo culture) were better than those in Method A (intact embryo culture).
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