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An Oscillator and a Mixer for 140-GHz Heterodyne Receiver Front-End based on SiGe HBT Technology
Yoon, Daekeun,Song, Kiryong,Kaynak, Mehmet,Tillack, Bernd,Rieh, Jae-Sung The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.1
This paper reports a couple of key circuit blocks developed for heterodyne receiver front-ends operating near 140 GHz based on SiGe HBT technology. Firstly, a 123-GHz oscillator was developed based on Colpitts topology, which showed -5 dBm output power and phase noise of -107.34 dBc/Hz at 10 MHz. DC power dissipation was 25.6 mW. Secondly, a 135 GHz mixer was developed based on a modified Gilbert Cell topology, which exhibited a peak conversion gain of 3.6 dB at 1 GHz IF at fixed LO frequency of 134 GHz. DC power dissipation was 3 mW, which mostly comes from the buffer.
An Oscillator and a Mixer for 140-GHz Heterodyne Receiver Front-End based on SiGe HBT Technology
윤대근,송기룡,Mehmet Kaynak,Bernd Tillack,이재성 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.1
This paper reports a couple of key circuit blocks developed for heterodyne receiver front-ends operating near 140 GHz based on SiGe HBT technology. Firstly, a 123-GHz oscillator was developed based on Colpitts topology, which showed -5 dBm output power and phase noise of -107.34 dBc/Hz at 10 MHz. DC power dissipation was 25.6 mW. Secondly, a 135 GHz mixer was developed based on a modified Gilbert Cell topology, which exhibited a peak conversion gain of 3.6 dB at 1 GHz IF at fixed LO frequency of 134 GHz. DC power dissipation was 3 mW, which mostly comes from the buffer.
An Oscillator and a Mixer for 140-㎓ Heterodyne Receiver Front-End based on SiGe HBT Technology
Daekeun Yoon,Kiryong Song,Mehmet Kaynak,Bernd Tillack,Jae-Sung Rieh 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.1
This paper reports a couple of key circuit blocks developed for heterodyne receiver front-ends operating near 140 ㎓ based on SiGe HBT technology. Firstly, a 123-㎓ oscillator was developed based on Colpitts topology, which showed - 5 ㏈m output power and phase noise of -107.34 ㏈c/㎐ at 10 ㎒. DC power dissipation was 25.6 ㎽. Secondly, a 135 ㎓ mixer was developed based on a modified Gilbert Cell topology, which exhibited a peak conversion gain of 3.6 ㏈ at 1 ㎓ IF at fixed LO frequency of 134 ㎓. DC power dissipation was 3 ㎽, which mostly comes from the buffer.
Kim, Jungsoo,Yoon, Daekeun,Yun, Jongwon,Song, Kiryong,Kaynak, Mehmet,Tillack, Bernd,Rieh, Jae-Sung IEEE 2018 IEEE transactions on terahertz science and technol Vol.8 No.5
<P>In this paper, three-dimensional (3-D) terahertz (THz) tomography was demonstrated with a signal source and imagers based on transistor circuits fabricated with standard semiconductor technologies. For the signal source, a 300-GHz oscillator based on InP HBT technology was employed. For detection, two types of imagers operating near 300 GHz were employed, one direct and the other heterodyne, both realized with SiGe HBT technology. With a set of 2-D images taken from different angles, sinograms and tomograms were obtained, which led to a successful reconstruction of 3-D images of the target object based on the filtered back-projection algorithm. A systematic comparison was made for the direct imager and the heterodyne imager, for which the signal input power and the video bandwidth were varied for both imagers. The results revealed that the heterodyne imager shows a better sensitivity than the direct imager. However, a similar dynamic range of around 30 dB was achieved for both imagers because of a saturation observed for the heterodyne imager when the input power exceeds the threshold. The video bandwidth did not affect the image quality significantly for the bandwidth variation over four orders of magnitude for both imagers.</P>
Two 320 GHz Signal Sources Based on SiGe HBT Technology
Yun, Jongwon,Yoon, Daekeun,Jung, Seungyoon,Kaynak, Mehmet,Tillack, Bernd,Rieh, Jae-Sung THE INSTITUTE OF ELECTRICAL ENGINEERS 2015 IEEE Microwave and Wireless Components Letters Vol. No.
<P>Two 320 GHz signal sources, a push-push oscillator and an integrated oscillator-doubler, based on a 130 nm SiGe HBT technology are reported. Both signal sources adopt a common-base cross-coupled topology as an oscillator core. The doubler employs a <TEX>$G_{{m}}$</TEX>-boosting technique for improved conversion loss. The push-push oscillator exhibits an output power of <TEX>${-}6.3$</TEX> dBm and a phase noise of <TEX>${-}96.6$</TEX> dBc/Hz at 10 MHz offset. The output power and the phase noise of the integrated oscillator-doubler are 1.6 dBm and <TEX>${-}94.7$</TEX> dBc/Hz at 10 MHz offset, respectively. They dissipate dc power of 101.2 mW and 197.4 mW, leading to DC-to-RF efficiency of 0.2 % and 0.7 %, respectively.</P>
260-GHz differential amplifier in SiGe heterojunction bipolar transistor technology
Yoon, D.,Seo, M.-G.,Song, K.,Kaynak, M.,Tillack, B.,Rieh, J.-S. IET 2017 Electronics letters Vol.53 No.3
<P>A 260-GHz amplifier in a SiGe heterojunction bipolar transistor (HBT) technology is reported. It is based on three-stage differential cascode topology and adopts a passive shunt transistor pair at the output of each amplifying stage to relax instability caused by parasitic base inductance of amplifying transistor pair. The instability of the amplifier can be mitigated by tuning the base bias voltage of the shunt transistor pair. Peak gain of the amplifier was measured as 15 dB at 260 GHz. DC power dissipation is 112 mW. The chip occupies 300 x 160 m(2) excluding Baluns and probing pads.</P>
300-GHz Direct and Heterodyne Active Imagers Based on 0.13-μm SiGe HBT Technology
Yoon, Daekeun,Kim, Jungsoo,Yun, Jongwon,Kaynak, Mehmet,Tillack, Bernd,Rieh, Jae-Sung IEEE 2017 IEEE transactions on terahertz science and technol Vol.7 No.5
<P>300-GHz direct and heterodyne imagers based on a 0.13-mu m SiGe HBT technology were developed for active imaging applications in this work. The direct imager, which is based on the square-law principle, shows a maximum responsivity of 6121 V/W and a minimum noise equivalent power (NEP) of 21.2 pW/Hz(1/2) at 315 GHz. The heterodyne imager, which consists of a mixer, a local oscillator, an IF amplifier, and an IF detector, exhibits a maximum responsivity of 322 kV/W and a minimum NEP of 3.9 pW/Hz(1/2) at 300 GHz. Total dc power consumption of the direct imager is 0.6 mW, while the heterodyne imager consumes 21 mW. The chip areas of the direct and heterodyne imagers including the on-chip antenna are 460 x 410 and 610 x 610 mu m(2), respectively. To compare the performance of the two types of imagers for imaging applications, images from both imagers were acquired and compared with various output power levels of the signal source. It was demonstrated that the heterodyne imager shows much better image quality, especially when the signal source power is not sufficiently high.</P>