http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Noda, Minoru,Kodama, Kazushi,Kitai, Satoshi,Takahashi, Mitsue,Kanashima, Takeshi,Okuyama, Masanori The Korean Institute of Electrical and Electronic 2003 전기전자재료 Vol.16 No.9
A metal-ferroelectric [SrBi$_2$Ta$_2$O$\_$9/ (SBT)-high-k-insulator(PrOx)-semiconductor(Si) structure has been fabricated and evaluated as a key part of metal-ferroelectric-insulator-semiconductor-field-effect-transistor MFIS-FET memory, aiming to improve the memory retention characteristics by increasing the dielectric constant in the insulator layer and suppressing the depolarization field in the SBT layer. A 20-nm PrOx film grown on Si(100) showed both a high of about 12 and a low leakage current density of less than 1${\times}$ 10e-8 A/$\textrm{cm}^2$ at 105 MV/cm. A 400-nm SBT film prepared on PrOx/Si shows a preferentially oriented (105) crystalline structure, grain size of about 130 nm and subface roughness of 3.2 nm. A capacitance-voltage hysteresis is confirmed on the Pt/SBT/PrOx/Si diode with a memory window of 0.3V at a sweep voltage width of 12 V. The memory retention time was about 1 104s, comparable to the conventional Pt/SBT/SiO$\_$x/N$\_$y/(SiO$\_$N/)/Si. The gradual change of the capacitance indicates that some memory degradation mechanism is different from that in the Pt/SBT/SiON/Si structure.
Miniature Ultrasonic and Tactile Sensors for Dexterous Robot
Okuyama, Masanori,Yamashita, Kaoru,Noda, Minoru,Sohgawa, Masayuki,Kanashima, Takeshi,Noma, Haruo The Korean Institute of Electrical and Electronic 2012 Transactions on Electrical and Electronic Material Vol.13 No.5
Miniature ultrasonic and tactile sensors on Si substrate have been proposed, fabricated and characterized to detect objects for a dexterous robot. The ultrasonic sensor consists of piezoelectric PZT thin film on a Pt/Ti/$SiO_2$ and/or Si diaphragm fabricated using a micromachining technique; the ultrasonic sensor detects the piezoelectric voltage as an ultrasonic wave. The sensitivity has been enhanced by improving the device structure, and the resonant frequency in the array sensor has been equalized. Position detection has been carried out by using a sensor array with high sensitivity and uniform resonant frequency. The tactile sensor consists of four or three warped cantilevers which have NiCr or $Si:B^+$ piezoresistive layer for stress detection. Normal and shear stresses can be estimated by calculation using resistance changes of the piezoresitive layers on the cantilevers. Gripping state has been identified by using the tactile sensor which is installed on finger of a robot hand, and friction of objects has been measured by slipping the sensor.
Carrier Transfer in Closely Stacked GaAs/AlGaAs Quantum Dots Grown by Using Droplet Epitaxy
Martin Elborg,Yuanzhao Yao,Takeshi Noda,Takaaki Mano,Yoshiki Sakuma,Raman Bekarevich,Kazutaka Mitsuishi 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.72 No.11
We investigate the carrier transfer in stacked droplet epitaxially grown GaAs quantum dots (QDs) in experiments and calculations. While in the Stranski-Krastanov growth mode, QDs align due to stain propagation, droplet epitaxy QDs pose a difficulty for achieving coupled stacked QDs due to their random positioning. We demonstrate that carrier transfer is possible in such structures by designing their size and areal density. We achieve a significant geometrical overlap between stacked QDs by employing an areal density of 3.9×1010 dots/cm2 and an average QD diameter of 45.5 nm. A clear redshift in the position of the photoluminescence peak is observed when the separation layer’s thickness is reduced from 16 nm to 2.5 nm. Theoretical calculations of the electronic states of the stacked QDs with varying degrees of misalignment confirm that this red-shift is mainly caused by a lowering of the ground state energy due to coupling. To separately analyze the effect of vertical carrier transfer between QDs, we investigate samples with two layers of stacked QDs of different sizes. We demonstrates in photoluminescence experiments that carriers readily transfer to the larger QD when the barrier thickness is reduced to a degree where tunneling is possible.
Miniature Ultrasonic and Tactile Sensors for Dexterous Robot
Masanori Okuyama,Kaoru Yamashita,Minoru Noda,Masayuki Sohgawa,Takeshi Kanashima,Haruo Noma 한국전기전자재료학회 2012 Transactions on Electrical and Electronic Material Vol.13 No.5
Miniature ultrasonic and tactile sensors on Si substrate have been proposed, fabricated and characterized to detect objects for a dexterous robot. The ultrasonic sensor consists of piezoelectric PZT thin film on a Pt/Ti/SiO2 and/or Si diaphragm fabricated using a micromachining technique; the ultrasonic sensor detects the piezoelectric voltage as an ultrasonic wave. The sensitivity has been enhanced by improving the device structure, and the resonant frequency in the array sensor has been equalized. Position detection has been carried out by using a sensor array with high sensitivity and uniform resonant frequency. The tactile sensor consists of four or three warped cantilevers which have NiCr or Si:B+ piezoresistive layer for stress detection. Normal and shear stresses can be estimated by calculation using resistance changes of the piezoresitive layers on the cantilevers. Gripping state has been identified by using the tactile sensor which is installed on finger of a robot hand, and friction of objects has been measured by slipping the sensor.
Md. Emrul Kayesh,Kiyoto Matsuishi,Towhid H. Chowdhury,Ryuji Kaneko,Takeshi Noda,Ashraful Islam 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.6
In this letter, we have introduced copper chloride (CuCl 2 ) as an additive in the CH 3 NH 3 PbI 3 precursor solution to improvethe surface morphology and crystallinity of CH 3 NH 3 PbI 3 fi lms in a single solvent system. Our optimized perovskite solarcells (PSCs) with 2.5 mol% CuCl 2 additive showed best power conversion effi ciency (PCE) of 15.22%. The PCE of the PSCsfabricated by CuCl 2 (2.5 mol%) additive engineering was 56% higher than the PSC fabricated with pristine CH 3 NH 3 PbI 3 .
Chowdhury, Towhid H.,Akhtaruzzaman, Md.,Kayesh, Md. Emrul,Kaneko, Ryuji,Noda, Takeshi,Lee, Jae-Joon,Islam, Ashraful Elsevier 2018 SOLAR ENERGY -PHOENIX ARIZONA THEN NEW YORK- Vol.171 No.-
<P><B>Abstract</B></P> <P>Low temperature processed Perovskite solar cells (PSCs) are popular due to their potential for scalable production. In this work, we report reduced Graphene Oxide (r-GO)/copper (I) thiocyanate (CuSCN) as an efficient bilayer hole transport layer (HTL) for low temperature processed inverted planar PSCs. We have systematically optimized the thickness of CuSCN interlayer at the r-GO/MAPbI<SUB>3</SUB> interface resulting in bilayer HTL structure to enhance the stability and photovoltaic performance of low temperature processed r-GO HTL based PSCs with a standard surface area of 1.02 cm<SUP>2</SUP>. With matched valence band energy level, the r-GO/CuSCN bilayer HTL based PSCs showed high power conversion efficiency of 14.28%, thanks to the improved open circuit voltage (V<SUB>OC</SUB>) compared to the only r-GO based PSC. Moreover, enhanced stability has been observed for the r-GO/CuSCN based PSCs which retained over 90% of its initial efficiency after 100 h light soaking measured under continuous AM 1.5 sun illumination.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Novel r-GO/CuSCN bilayer HTL was fabricated for inverted planar perovskite solar cells (PSCs). </LI> <LI> The r-GO/CuSCN bilayer HTL based PSC showed power conversion efficiency up to 14.28%. </LI> <LI> The r-GO/CuSCN bilayer HTL based PSC showed stable photovoltaic performance for 100 h. </LI> </UL> </P>
Kaneko, Ryuji,Chowdhury, Towhid H.,Wu, Guohua,Kayesh, Md. Emrul,Kazaoui, Said,Sugawa, Kosuke,Lee, Jae-Joon,Noda, Takeshi,Islam, Ashraful,Otsuki, Joe Elsevier 2019 SOLAR ENERGY -PHOENIX ARIZONA THEN NEW YORK- Vol.181 No.-
<P><B>Abstract</B></P> <P>We have synthesized cobalt-doped NiO<I> <SUB>x</SUB> </I> nanoparticles containing 0.5, 1, 2, 5 and 10 mol% cobalt ions and have investigated their electronic properties, which can be processed into smooth and pinhole-free layers at low temperature (<150 °C) as hole transport layers (HTLs) for perovskite solar cells (PSCs). We have revealed that the relationship between conductivity of HTLs and hole extraction properties to improve the photovoltaic performance. The thin film of cobalt-doped NiO<I> <SUB>x</SUB> </I> nanoparticles showed higher conductivities compared to pristine NiO<I> <SUB>x</SUB> </I> nanoparticles. Consequently, PSCs with power conversion efficiencies over 14.5%, an improvement from 11.5% for those with the pristine NiO<I> <SUB>x</SUB> </I>-based HTL, have been obtained. This work will contribute to the development of doped metal oxide HTLs, which are processable at low temperature.</P> <P><B>Highlights</B></P> <P> <UL> <LI> NiO<I> <SUB>x</SUB> </I> nanoparticles with different concertation of cobalt ions are synthesized. </LI> <LI> Co-NiO<I> <SUB>x</SUB> </I> layers are fabricated at low-temperature process as a hole transport layer. </LI> <LI> The band alignment is optimized by decreased work function of Co-NiO<I> <SUB>x</SUB> </I> layer. </LI> <LI> The conductivity of Co-NiO<I> <SUB>x</SUB> </I> films is improved to 6.20 × <SUP> 10 - 6 </SUP> S <SUP> c m - 1 </SUP> . </LI> <LI> Conversion efficiency is improved to 14.5% using 1 mol% Co-NiO<I> <SUB>x</SUB> </I>. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Emrul Kayesh, Md.,Matsuishi, Kiyoto,Chowdhury, Towhid H.,Kaneko, Ryuji,Lee, Jae-Joon,Noda, Takeshi,Islam, Ashraful Elsevier 2018 THIN SOLID FILMS - Vol.663 No.-
<P><B>Abstract</B></P> <P>The stability of perovskite solar cells (PSCs) are critically related to the perovskite crystal morphology and film quality, hence controlling the perovskite film formation is one of the key concerns. In this study, we have used four anti-solvents- toluene, chlorobenzene, <I>p</I>-xylene and ether to fabricate high quality CH<SUB>3</SUB>NH<SUB>3</SUB>PbI<SUB>3</SUB> perovskite films. We investigated the surface morphology, optical and structural properties of the corresponding perovskite films. Consequently, PSCs with variation of these anti-solvents were fabricated and the respective photovoltaic performances over a period of 30 days in dark and under air mass 1.5G sunlight conditions have been observed. Our analyses onto the post fabrication of PSCs highlight that, the perovskite films formed by toluene, chlorobenzene and <I>p</I>-xylene treatment results in high efficient and stable PSCs in dark. Interestingly, the ether treated PSC had no photovoltaic response after 10 days. The toluene and chlorobenzene treated PSCs showed stable device performance and retained ̴ 90% of their initial power conversion efficiency even after 30 days light soaking. The <I>p</I>-xylene treated PSCs showed unstable performance during the same light soaking period.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Anti-solvent dependent properties of perovskite films have been studied. </LI> <LI> PSCs based on four anti-solvents treatment with high PCE have been fabricated. </LI> <LI> Stability dependent photovoltaic response on anti-solvents has been observed. </LI> </UL> </P>