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Reddy, P.R. Sekhar,Janardhanam, V.,Jyothi, I.,Chang, Han-Soo,Lee, Sung-Nam,Lee, Myung Sun,Reddy, V. Rajagopal,Choi, Chel-Jong Elsevier 2017 Superlattices and microstructures Vol.111 No.-
<P><B>Abstract</B></P> <P>Au-CuPc nanocomposite films were prepared by simultaneous evaporation of Au and CuPc with various Au and CuPc concentrations. Microstructural analysis of Au-CuPc films revealed elongated Au cluster formation from isolated Au nanoclusters with increasing Au concentration associated with coalescence of Au clusters. Au-CuPc films with different compositions were employed as interlayer in Al/n-Si Schottky diode. Barrier height and series resistance of the Al/n-Si Schottky diode with Au-CuPc interlayer decreased with increasing Au concentration. This could be associated with the enhancement of electron tunneling between neighboring clusters due to decrease in spacing of Au clusters and formation of conducting paths through the composite material. Interface state density of the Al/n-Si Schottky diode with Au-CuPc interlayer increased with increasing Au concentration. This might be because the inclusion of metal decreases the crystallinity and crystal size of the polymer matrix accompanied by the formation of local defect sites at the places of metal nucleation.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Au-CuPc nanocomposite films with varying Au and CuPc content were formed by co-evaporation. </LI> <LI> Au-CuPc nanocomposite films were employed as interlayer in Schottky diode. </LI> <LI> Elongated Au clusters were formed from isolated Au nanoclusters with increasing Au content. </LI> <LI> Au-CuPc interlayer with higher CuPc content showed higher barrier and series resistance. </LI> <LI> Electron tunneling increased due to formation of conducting paths between clusters. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Reddy, Mudumala Veeranarayana,Lien, Nguyen Thi Kim,Reddy, Gangireddy Chandra Sekhar,Lim, Kwon Taek,Jeong, Yeon Tae The Royal Society of Chemistry 2016 GREEN CHEMISTRY Vol.18 No.15
<P>A novel poly(oligoethylene glycol methacrylate)-g-supported layered double hydroxides (LDHs-g-POEGMA) with high surface area with easy accessibility of active sites was successfully prepared for the first time via an efficient sequential synthetic procedure and characterized by FT-IR spectroscopy, XPS spectra, thermogravimetric analysis (TGA), powder X-ray diffraction (XRD), scanning electron microscopy (SEM), and NMR spectroscopy. The obtained green catalyst was used as an effective, inexpensive, environmentally friendly, and highly active reusable heterogeneous solid catalyst for synthesis of chromene incorporated dihydroquinoline derivatives via a one-pot three-component condensation of 4-hydroxy-2H-chromen-2-one, aromatic amines, and various aldehydes under solvent-free conditions. The notable features of this 'green' reaction are good to excellent yields, shorter reaction times, avoidance of toxic solvents, and substrate diversity. Herein we also observed that the LDHs-g-POEGMA is highly stable under reaction conditions and can be separated easily from the reaction mixture, and, therefore, can be reused for several consecutive runs without any apparent loss in its catalytic activity.</P>
Reddy, P.R. Sekhar,Janardhanam, V.,Jyothi, I.,Yuk, Shim-Hoon,Reddy, V. Rajagopal,Jeong, Jae-Chan,Lee, Sung-Nam,Choi, Chel-Jong The Institute of Electronics and Information Engin 2016 Journal of semiconductor technology and science Vol.16 No.5
The electrical properties of Ti/p-type InP Schottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the space-charge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.
Veeranarayana Reddy, M.,Chandra Sekhar Reddy, G.,Thi Kim Lien, N.,Kim, D.W.,Jeong, Y.T. Pergamon Press 2017 Tetrahedron Vol.73 No.10
A facile and efficient method for the synthesis of benzo[4,5]imidazo[1,2-a]pyrimidines has been achieved via highly active and reusable heterogeneous poly acrylic acid-supported layered double hydroxides (PAA-g-LDHs) catalyst promoted one-pot reaction of 1H-benzo[d]imidazol-2-amine, with α,β-unsaturated carbonyl compounds under solvent-free conditions. PAA-g-LDHs catalyst was successfully synthesized via reversible addition-fragmentation chain-transfer polymerization using grafting reaction and was characterized by different analytical techniques. The significant features of this reaction include expedient one-pot process, short reaction time, excellent yields, wide substrate scope and operational simplicity. Also, the catalyst could be reused for several consecutive runs without any apparent loss in its catalytic activity.
P. R. Sekhar Reddy,V. Janardhanam,I. Jyothi,Shim-Hoon Yuk,V. Rajagopal Reddy,Jae-Chan Jeong,Sung-Nam Lee,Chel-Jong Choi 대한전자공학회 2016 Journal of semiconductor technology and science Vol.16 No.5
The electrical properties of Ti/p-type InP Schottky diodes with and without polyaniline (PANI) interlayer was investigated using current–voltage (I–V) and capacitance–voltage (C–V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the space-charge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.
Nandanapalli, Koteeswara Reddy,Mudusu, Devika,Lingandhinne, Raja Mohan Reddy,Mitta, Sekhar Babu,K. Reddy, Gunasekhar,Karuppannan, Ramesh,Whang, Dongmok Elsevier 2019 JOURNAL OF ALLOYS AND COMPOUNDS Vol.770 No.-
<P><B>Abstract</B></P> <P>Tin (II) sulfide (SnS), one of the most abundant materials, is being considered as an absorber material for the development of low-cost and nontoxic solar cell devices. In this direction, we have developed nanocrystalline films of SnS with uniform morphology on different substrates by adopting two-step thermal evaporation process. The surface studies show that irrespective of substrate nature, the as-grown SnS films possess uniform surface-morphology with well-defined facets. Structural studies reveal that SnS films grown on various substrates possess an orthorhombic crystal structure. However, as compared to other substrates, the structures developed on sapphire and copper exhibit 〈010〉 as preferential growth direction. From the electrical measurements, it is noticed that the films deposited on highly-conductive substrates consist of low electrical resistance, whereas the films are slightly resistive on insulating substrates. Based on these investigations it is emphasized that high-quality SnS films can be developed with uniform morphology on any substrates by adopting our two-step process.</P> <P><B>Highlights</B></P> <P> <UL> <LI> SnS films were developed with uniform morphology by using two-step process. </LI> <LI> The films grown on different substrates possess nanocrystallites with well-defined facets. </LI> <LI> These films consist of excellent chemical stoichiometry and phase purity. </LI> <LI> SnS films grown on different substrates have either 〈111〉 or 〈010〉 growth direction. </LI> </UL> </P>
Sekhar, Kondapalli Venkata Gowri Chandra,Rao, Vajja Sambasiva,Reddy, Aravalli Satish,Sunandini, Ravada,Satuluri, V S A Kumar Korean Chemical Society 2010 Bulletin of the Korean Chemical Society Vol.31 No.5
A simple and efficient method has been developed for conversion of arenecarbaldehyde-3-methylquinoxalin-2-ylhydrazones to 3-(2-methylquinoxalin-3-yl)-2-(substitutedphenyl)thiazolidin-4-ones in good yields using microwave irradiation technique on silica as solid support under solvent free conditions. The synthesized compounds were characterized by elemental microanalysis, infrared spectroscopy, $^1H$ NMR, and mass spectroscopy. All the synthesized thiazolidinones were investigated for their antimicrobial and antifungal activities. The results of the biological activities revealed that the compounds 3b, 3d, 3f and 3h exhibited excellent antibacterial activities while 3d and 3h exhibited good antifungal activity.
Solution-based spin-coated tin sulfide thin films for photovoltaic and supercapacitor applications
Reddy, B. Purusottam,Sekhar, M. Chandra,Vattikuti, S.V. Prabhakar,Suh, Youngsuk,Park, Si-Hyun Elsevier 2018 Materials research bulletin Vol.103 No.-
<P><B>Abstract</B></P> <P>In this study, tin sulfide (SnS<SUB>x</SUB>) thin films were prepared using a solution-based spin-coating method. The annealing temperature was observed to play a dominant role in determining the phase, crystallinity, and morphology of the SnS<SUB>x</SUB> thin films. The results obtained from X-ray diffraction, as well as optical and electrical measurements, revealed that the films annealed at 500 °C exhibit a pure SnS phase, with a carrier concentration and direct band gap of ∼10<SUP>12</SUP> and 1.4 eV, respectively. To explore the applications of SnS in supercapacitors, electrochemical measurements were performed in a 0.2 M NaOH solution. The results indicated that films with a pure SnS phase have a high specific capacitance of 42 F g<SUP>―1</SUP> at a current density of 2 A g<SUP>―1</SUP>. The synthesized SnS thin films demonstrate potential for applications in electrochemical capacitors and solar cells.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Tin sulfide (SnS<SUB>x</SUB>) thin films were prepared by solution-based spin coating. </LI> <LI> The SnS<SUB>x</SUB> films annealed at 500 °C exhibited a pure SnS phase. </LI> <LI> The films exhibited direct band gap of 1.4 eV which is near to solar maximum. </LI> <LI> The films with the pure SnS phase exhibited a specific capacitance of 42 F g<SUP>―1</SUP>. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>