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S. S. Sehgal,Krishnan Murugesan,S. K. Mohapatra 대한기계학회 2012 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.26 No.9
Microchannels based heat sinks are considered as potential thermal management solution for electronic devices. The overall thermal performance of a microchannel heat sink depends on the flow characteristics within microchannels as well as within the inlet and outlet plenum and these flow phenomena are influenced by channel aspect ratio, plenum aspect ratio and flow arrangements at the inlet and outlet plenums. In the present research work an experimental investigation has been carried out to understand how the heat transfer and pressure drop attributes vary with different plenum aspect ratio and channel aspect ratio under different flow arrangements. For this purpose microchannel test pieces with two channel aspect ratios, 4.72 and 7.57 and three plenum aspect ratios, 2.5, 3.0 and 3.75 have been tested under three flow arrangements, namely U-, S- and P-types. Test runs were performed by maintaining three constant heat inputs,125 W, 225 W and 375 W in the range 224.3 ≤ Re ≤ 1121.7. Reduction in channel width (increase in aspect ratio, defined as depth to width of channel) in the present case has shown about 126 to 165% increase in Nusselt number, whereas increase in plenum length (reduction in plenum aspect ratio defined as width to length of plenum) has resulted in 18 to 26% increase in Nusselt number.
N.S.K. Gowthaman,Debananda Mohapatra,P. Arul,Wei Sea Chang 한국공업화학회 2023 Journal of Industrial and Engineering Chemistry Vol.117 No.-
This paper describes the decoration of AuNPs on carbon nano-onions (CNO) followed by its fabrication onelectrode surface for the sensitive determination of environmental pollutant hydrazine (HZ). A greenultrasonication approach was employed to decorate the AuNPs on CNOs and it follows electroless deposition. HR-TEM results reveal that spherical 10 nm-sized AuNPs were well dispersed on 30 nm-sizedCNOs. The obtained 3.7 eV spin–orbit coupling in the XPS Au4f region suggests the successful decorationof Au(0) on CNO. The Au@CNO nanostructure was then directly attached on GC electrode surface by simpleimmersion and achieved through p–p stacking interaction and the resultant electrode exhibited highelectroactive surface area and lower resistivity when compared to the CNO fabricated electrode. TheAu@CNO electrode was utilized to determine HZ in effluent samples and delivered higher electrocatalyticactivity by showing lower onset potential than the bare and CNO fabricated electrodes. The increasedelectroactive area and high electronic conductivity of Au@CNO nanostructure are attributed to theoffered lowest detection limit of 12 109 M (S/N = 3) and larger sensitivity of 485.7 lA/mM cm2. The green and environmentally benign approached Au@CNO nanostructure leads to their successfulimplementation in the determination of HZ in effluent samples.
Singh, V.,Sivaramaiah, G.,Mohapatra, M.,Rao, J. L.,Singh, N.,Pathak, M. S.,Singh, P. K.,Dhoble, S. J. Springer Science + Business Media 2017 Journal of Electronic Materials Vol.46 No.2
<P>GdAlO3 phosphor samples have been prepared by a solution combustion method. X-ray diffraction analysis revealed that the GdAlO3 phosphor stabilized in orthorhombic phase. The optical absorption spectrum showed bands due to Gd3+ ions as well as defect level in the host. The excitation spectrum exhibited a dominant band with maximum at 273 nm. Upon excitation at 273 nm, ultraviolet-B (UV-B) emission with maximum at 312 nm was observed from the undoped sample, being attributed to P-6(7/2) -> S-8(7/2) transition of Gd3+ ion. The UV-B emission was enhanced at liquid-nitrogen temperature (77 K), most probably due to increased ground-state population according to the Boltzmann distribution law. Electron spin resonance spectra of samples at both room and liquid-nitrogen temperature exhibited resonance signals at g ae 2, attributed to Gd3+ ions arranged with octahedral symmetry linked via oxygen bridges. Various magnetic and thermodynamic parameters for the phosphor system were evaluated by standard procedures. Correlation of these values with the optical properties suggested that the GdAlO3 phosphor can be effectively used as an UV-B light source for industrial applications at room temperature.</P>
Singh, V.,Sivaramaiah, G.,Rao, J. L.,Singh, N.,Mohapatra, M.,Singh, P. K.,Pathak, M. S.,Dhoble, S. J. Minerals, Metals & Materials Society and the Insti 2017 Journal of Electronic Materials Vol. No.
<P>LiAl5O8 doped with Fe was synthesized by a propellant combustion route at furnace temperature of 773 K. The phosphor was characterized using powder x-ray diffraction, optical absorption, electron paramagnetic resonance (EPR) and photoluminescence spectroscopic techniques. The optical absorption spectrum exhibits a broad band at 242 nm characteristic of charge transfer between Fe3+-O2-. On excitation with 293 nm, emission band for the Fe3+ ion was observed at 687 nm. The CIE (International Commission on Illumination or Commission Internationale de l'Elcairage) coordinates for the system were evaluated adopting standard procedure which suggested that the system can be effective as a deep red emitting phosphor. The EPR spectrum of this phosphor exhibits a number of resonance signals characteristic of Fe3+ ions. The resonance signals at g = 3.16, 2.27 are attributed to Fe3+ present at tetrahedral site with an axial symmetry. The resonance signals at g = 1.98 and 1.43 are attributed to Fe3+ ions in octahedral site with an axial symmetry. Various EPR parameters such as the number of spins, Gibbs free energy, magnetic susceptibility, Curie constant and effective magnetic moment values are calculated and compared at room temperature and 110 K.</P>
Mohapatra, R.K.,Ghosh, S.,Naik, P.,Mishra, S.K.,Mahapatra, A.,Dash, D.C. Korean Chemical Society 2012 대한화학회지 Vol.56 No.1
A series of homo binuclear complexs of the type $[M_2(L/L^')(NO_3)n].mH_2O$, [where $M=U{O_2}^{2+},\;Th^{4+},\;ZrO^{2+}$] and $[(VO)_2(L/L^')(SO_4)_2]{\cdot}2H_2O$, L=1,5,6,9,12,15,16,20 octaaza-7,813,14-tetraphenyl-2,4,17,19-tetramethyl-1,4,6,8,12,14,16,19-docosaoctene (OTTDO) or L'=10:11;21:22-dibenzo-1,5,6,9,12,15,16,20-octaaza-7,813,14-tetraphenyl-2,4,17,19-tetramethyl-1,4,6,8,12,14,16,19-docosaoctene (DOTTOT), n=4 for $U{O_2}^{2+}$, $ZrO^{2+}$ n=8 for $Th^{4+}$ m=1,2,3 respectively, have been synthesized in template method from ethylenediamine/orthophenylene diamine, benzil monohydrazone and acetyl acetone and characterized on the basis of elemental analysis, thermal analysis, molar conductivity, magnetic moment, electronic, infrared, $^1H$-NMR studies. The results indicate that the VO(IV) ion is penta co-ordinated yielding paramagnetic complexes; $UO_2(VI)$, ZrO(IV) ions are hexa co-ordinated where as Th(IV) ion is octa co-ordinated yielding diamagnetic complexes of above composition. The fungi toxicity of the ZrO(IV) and VO(IV) complexes against some fungal pathogen has been studied.
Some Device Design Considerations to Enhance the Performance of DG-MOSFETs
S K Mohapatra,K P Pradhan,P K Sahu 한국전기전자재료학회 2013 Transactions on Electrical and Electronic Material Vol.14 No.6
When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC))and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically,leakage current (Ioff), on current (Ion), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.
Mohapatra, R.K.,Mishra, U.K.,Mishra, S.K.,Mahapatra, A.,Dash, D.C. Korean Chemical Society 2011 대한화학회지 Vol.55 No.6
A series of complexes of the type [$ML_2Cl_2$], where L=2-(o-anisylidene-2'-imino) amino benzimidazole (AIAB) and 2-(furfurylidene imino) amino benzimidazole (FIAB), M=Cu(II), Co(II), Ni(II) and Zn(II), have been synthesized and characterized on the basis of elemental analysis, thermal analysis, molar conductivity, magnetic moment, electronic, infrared, $^1H$-NMR spectral studies. The results are in consistent with bidentate chelation of ligand with azomethine nitrogen and ring nitrogen donors. All these Schiff bases and their complexes have also been screened for their antibacterial (Bacillus subtilis, Bacillus stearothermophilus, Escherichia coli and Salmonella typhi) and antifungal activities (Aspergillus niger and Aspergillus flavus).
Some Device Design Considerations to Enhance the Performance of DG-MOSFETs
Mohapatra, S.K.,Pradhan, K.P.,Sahu, P.K. The Korean Institute of Electrical and Electronic 2013 Transactions on Electrical and Electronic Material Vol.14 No.6
When subjected to a change in dimensions, the device performance decreases. Multi-gate SOI devices, viz. the Double Gate MOSFET (DG-MOSFET), are expected to make inroads into integrated circuit applications previously dominated exclusively by planar MOSFETs. The primary focus of attention is how channel engineering (i.e. Graded Channel (GC)) and gate engineering (i.e. Dual Insulator (DI)) as gate oxide) creates an effect on the device performance, specifically, leakage current ($I_{off}$), on current ($I_{on}$), and DIBL. This study examines the performance of the devices, by virtue of a simulation analysis, in conjunction with N-channel DG-MOSFETs. The important parameters for improvement in circuit speed and power consumption are discussed. From the analysis, DG-DI MOSFET is the most suitable candidate for high speed switching application, simultaneously providing better performance as an amplifier.
A Study of SCEs and Analog FOMs in GS-DGMOSFET with Lateral Asymmetric Channel Doping
P. K Sahu,S. K. Mohapatra,K. P. Pradhan 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.6
The design and analysis of analog circuit application on CMOS technology are a challenge in deep sub-micrometer process. This paper is a study on the performance value of Double Gate (DG) Metal Oxide Semiconductor Field Effect Transistor (MOSFET) with Gate Stack and the channel engineering Single Halo (SH), Double Halo (DH). Four different structures have been analysed keeping channel length constant. The short channel parameters and different sub-threshold analog figures of merit (FOMs) are analysed. This work extensively provides the device structures which may be applicable for high speed switching and low power consumption application.
ENHANCEMENT OF FERROMAGNETISM IN NANOCRYSTALLINE Zn_(1-x)Cu_xO (0.03 ≤ x ≤ 0.07)
JYOSHNARANI MOHAPATRA,D. K. MISHRA,P. K. MISHRA,B. P. BAG,S. K. SINGH 성균관대학교(자연과학캠퍼스) 성균나노과학기술원 2011 NANO Vol.6 No.4
We report room temperature ferromagnetism (RTFM) in nanocrystalline Zn1-xCuxO (0.03 ≤ x ≤ 0.07) materials synthesized by autocombustion technique. The average particle sizes are in the range of 60 nm. The saturation magnetization and coercivity of 7% Cu-doped ZnO is enhanced significantly in comparison to 3% and 5% Cu-doped ZnO. There is not much variation in the optical band gap due to Cu doping, thus suggesting the uniform distribution of Cu in the ZnO matrix. Micro-Raman and photoluminescence analysis predict the presence of clusters of oxygen vacancies in Cu-doped system which improves with the increase in Cu concentration. This study provides further evidence that oxygen vacancies play an important role in the enhancement of room temperature ferromagnetic property in Cu-doped ZnO.