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Electrosynthesis of copper phosphide thin films for efficient water oxidation
Pawar, Sambhaji M.,Pawar, Bharati S.,Babar, Pravin T.,Aqueel Ahmed, Abu Talha,Chavan, Harish S.,Jo, Yongcheol,Cho, Sangeun,Kim, Jongmin,Inamdar, Akbar I.,Kim, Jin Hyeok,Kim, Hyungsang,Im, Hyunsik Elsevier 2019 Materials letters Vol.241 No.-
<P><B>Abstract</B></P> <P>A copper phosphide (Cu<SUB>3</SUB>P) thin film is synthesized on a Ni foam using a one-step electrodeposition method at room temperature and annealed at 300 °C in Ar atmosphere. The Cu<SUB>3</SUB>P film is amorphous and has a flat morphology with surface voids. It works as an electrocatalyst for water oxidation in an alkaline 1 M KOH electrolyte. It exhibits excellent catalytic oxygen evolution reaction with an overpotential of 310 mV, Tafel slope of 88 mV/dec, and good stability over 20 h of operation at 10 mA/cm<SUP>2</SUP>. The excellent OER performance is due to its large electrochemically active surface area and low charge transfer resistance at the catalyst-electrolyte interface after the annealing.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Amorphous copper phosphide OER catalyst is synthesized by one-step electrodeposition. </LI> <LI> A smooth morphology with surface void is obtained after annealing. </LI> <LI> An overpotential of 310 mV at 10 mA/cm<SUP>2</SUP> with a Tafel slope of 88 mV/dec is demonstrated. </LI> <LI> Excellent long-term electrochemical durability is observed. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Pawar Pravin S.,Neerugatti KrishnaRao Eswar,Heo Jaeyeong 한국물리학회 2021 Current Applied Physics Vol.21 No.-
SnS is a layered material that crystallizes in an orthorhombic structure. This hinders the formation of a dense, pinhole-free morphology. The present study demonstrated the deposition of SnS thin films on soda-lime glass (SLG) and SLG/Mo substrates by spin-coating approach. The developed films were subsequently applied for the fabrication of a thin-film solar cell. The effect of the annealing temperature on the structural, optical, and morphological properties of the deposited SnS films was analyzed. The precursor concentrations and the annealing temperature played a critical role in determining the phase composition and morphological characteristics of the SnS thin films. TFSC with SLG/Mo/SnS/CdS/i-ZnO/AZO/Al configuration was fabricated using the optimal precursor ratio, i.e., Sn:S = 1:1.2, and this device showed a photoconversion efficiency of 0.076%. The reasons for the poor performance of the device were addressed in detail, and the scope for future research to optimize the device performance was elucidated.
Pawar, Sambhaji M.,Pawar, Bharati S.,Babar, Pravin T.,Ahmed, Abu Talha Aqueel,Chavan, Harish S.,Jo, Yongcheol,Cho, Sangeun,Kim, Jongmin,Hou, Bo,Inamdar, Akbar I.,Cha, SeungNam,Kim, Jin Hyeok,Kim, Tae Elsevier 2019 APPLIED SURFACE SCIENCE - Vol.470 No.-
<P><B>Abstract</B></P> <P>Efficient and low‐cost multifunctional electrodes play a key role in improving the performance of energy conversion and storage devices. In this study, ultrathin nanoporous CuCo<SUB>2</SUB>O<SUB>4</SUB> nanosheets are synthesized on a nickel foam substrate using electrodeposition followed by air annealing. The CuCo<SUB>2</SUB>O<SUB>4</SUB> nanosheet electrode exhibits a high specific capacitance of 1473 F g<SUP>─1</SUP> at 1 A g<SUP>─1</SUP> with a capacity retention of ∼93% after 5000 cycles in 3 M KOH solution. It also works well as an efficient oxygen evolution reaction electrocatalyst, demonstrating an overpotential of 260 mV at 20 mA cm<SUP>─2</SUP> with a Tafel slope of ∼64 mV dec<SUP>─1</SUP>. in 1 M KOH solution, which is the lowest reported among other copper-cobalt based transition metal oxide catalysts. The catalyst is very stable at >20 mA cm<SUP>─2</SUP> for more than 25 h. The superior electrochemical performance of the CuCo<SUB>2</SUB>O<SUB>4</SUB> nanosheet electrode is due to the synergetic effect of the direct growth of 2D nanosheet structure and a large electrochemically active surface area associated with nanopores on the CuCo<SUB>2</SUB>O<SUB>4</SUB> nanosheet surface.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Ultrathin nanoporous CuCo<SUB>2</SUB>O<SUB>4</SUB> nanosheets electrode synthesized by electrodeposition. </LI> <LI> High specific capacitance and good cycling stability were obtained. </LI> <LI> Highly efficient OER electrocatalyst with an overpotential of 260 mV at 20 mA/cm<SUP>2</SUP>. </LI> <LI> Excellent long-term electrochemical durability. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Effect of intrinsic ZnO thickness on the performance of SnS/CdS-based thin-film solar cells
Yadav Rahul Kumar,Pawar Pravin S.,Neerugatti KrishnaRao Eswar,Nandi Raju,조재유,허재영 한국물리학회 2021 Current Applied Physics Vol.31 No.-
Tin monosulfide (SnS) has promising properties as an absorber material for thin-film solar cells (TFSCs). SnS/ CdS-based TFSCs have the following device structure: SLG/Mo/SnS/CdS/i-ZnO/AZO/Al. The optimization of thickness of intrinsic zinc oxide (i-ZnO) for SnS-absorber layers and its impact on SnS/CdS heterojunction TFSCs has been investigated at different thicknesses ranging from 39 nm to 73 nm. With the increase in thickness of i- ZnO from 39 nm to 45 nm, the overall performance improved. The highest PCE of 3.50% (with VOC of 0.334 V, JSC of 18.9 mA cm 2, and FF of 55.5%) was observed for 45 nm-thick i-ZnO layers. Upon a further increase in the i-ZnO thickness to 73 nm, the device performance deteriorated, indicating that the optimum thickness of the i- ZnO is 45 nm. The device performances were analyzed comprehensively for different i-ZnO thicknesses.
( Vinay G Zanwar ),( Sunil V Pawar ),( Pravir A Gambhire ),( Samit S Jain ),( Ravindra G Surude ),( Vinaya B Shah ),( Qais Q Contractor ),( Pravin M Rathi ) 대한장연구학회 2016 Intestinal Research Vol.14 No.4
Background/Aims: The existence of non-celiac gluten sensitivity has been debated. Indeed, the intestinal and extra-intestinal symptoms of many patients with irritable bowel syndrome (IBS) but without celiac disease or wheat allergy have been shown to improve on a gluten-free diet. Therefore, this study set out to evaluate the effects of gluten on IBS symptoms. Methods: We performed a double-blind randomized placebo-controlled rechallenge trial in a tertiary care hospital with IBS patients who fulfilled the Rome III criteria. Patients with celiac disease and wheat allergy were appropriately excluded. The participants were administered a gluten-free diet for 4 weeks and were asked to complete a symptom-based questionnaire to assess their overall symptoms, abdominal pain, bloating, wind, and tiredness on the visual analog scale (0-100) at the baseline and every week thereafter. The participants who showed improvement were randomly assigned to one of two groups to receive either a placebo (gluten-free breads) or gluten (whole cereal breads) as a rechallenge for the next 4 weeks. Results: In line with the protocol analysis, 60 patients completed the study. The overall symptom score on the visual analog scale was significantly different between the two groups (P <0.05). Moreover, the patients in the gluten intervention group scored significantly higher in terms of abdominal pain, bloating, and tiredness (P <0.05), and their symptoms worsened within 1 week of the rechallenge. Conclusions: A gluten diet may worsen the symptoms of IBS patients. Therefore, some form of gluten sensitivity other than celiac disease exists in some of them, and patients with IBS may benefit from gluten restrictions. (Intest Res 2016;14:343-350)
Se Incorporation in VTD-SnS by RTA and Its Influence on Performance of Thin Film Solar Cells
Rahul Kumar Yadav,Yong Tae Kim,Pravin S. Pawar,Jaeyeong Heo 한국태양광발전학회 2022 Current Photovoltaic Research Vol.10 No.2
Planner configuration thin film solar cells (TFSCs) with SnS/CdS heterojunction performed a lower short-circuit current (JSC). In this study, we have demonstrated a path to overcome deficiency in JSC by the incorporation of Se in the SnS absorber. We carried out the incorporation of Se in VTD grown SnS absorber by rapid thermal annealing (RTA). The diffusion of Se is mostly governed by RTA temperature (TRTA), also it is observed that film structure changes from cube-like to plate-like structure with TRTA. The maximum JSC of 23.1 mA cm<SUP>-2</SUP> was observed for 400°C with an open-circuit voltage (VOC) of 0.140 V for the same temperature. The highest performance of 2.21% with JSC of 18.6 mA cm<SUP>-2</SUP>, VOC of 0.290 V, and fill factor (FF) of 40.9% is observed for a TRTA of 300°C. In the end, we compare the device performance of Se- incorporated SnS absorber with pristine SnS absorber material, increment in JSC is approximately 80% while a loss in VOC of about 20% has been observed.