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Park, Woon Ik,Yoon, Jong Moon,Park, Moonkyu,Lee, Jinsup,Kim, Sung Kyu,Jeong, Jae Won,Kim, Kyungho,Jeong, Hu Young,Jeon, Seokwoo,No, Kwang Soo,Lee, Jeong Yong,Jung, Yeon Sik American ChemicalSociety 2012 Nano letters Vol.12 No.3
<P>We report the direct formation of ordered memristor nanostructureson metal and graphene electrodes by a block copolymer self-assemblyprocess. Optimized surface functionalization provides stacking structuresof Si-containing block copolymer thin films to generate uniform memristordevice structures. Both the silicon oxide film and nanodot memristors,which were formed by the plasma oxidation of the self-assembled blockcopolymer thin films, presented unipolar switching behaviors withappropriate set and reset voltages for resistive memory applications.This approach offers a very convenient pathway to fabricate ultrahigh-densityresistive memory devices without relying on high-cost lithographyand pattern-transfer processes.</P><P><B>Graphic Abstract</B> <IMG SRC='http://pubs.acs.org/appl/literatum/publisher/achs/journals/content/nalefd/2012/nalefd.2012.12.issue-3/nl203597d/production/images/medium/nl-2011-03597d_0003.gif'></P><P><A href='http://pubs.acs.org/doi/suppl/10.1021/nl203597d'>ACS Electronic Supporting Info</A></P>