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서문숙;김건수;박재옥;이규혜 한양대학교 2007 韓國 生活 科學 硏究 Vol.27 No.1
Many recent research reported that men, different from the past, want to represent their individualities through clothing and become important shoppers. The market for men is gradually extended. In this study, a well known relationship between clothing values and brand orientation were tested for male consumers. Data from 334 adult male consumers living in a metropolitan area were collected and analyzed. Results indicated that male consumers with various demographic characteristics such as age, marital status, income, and clothing expense showed different level of clothing values. Regression analysis results indicated that among hedonic clothing value factors, confidence in clothing and fashion orientation had significant influence on brand loyalty. Among utilitarian factors symbolic values expressed through clothing had a strong influence on brand loyalty of male consumers.
Fabrication of 3-Dimensional LiMn<sub>2</sub>O<sub>4</sub> Thin Film
Park, Bo-Gun,Ryu, Jea Hyeok,Choi, Won Youl,Park, Yong-Joon Korean Chemical Society 2009 Bulletin of the Korean Chemical Society Vol.30 No.3
3-Dimensionally ordered macroporous $LiMn_2O_4$ thin film was prepared by a sol-gel and dip coating method on Pt/Ti/$SiO_2$/Si substrate. An opal structure consisting of mono dispersed polystyrene beads (300 nm) was used as a template. After solution containing Mn and Li precursors was coated on the template-deposited substrate, the template and organic materials in the precursors was removed by calcination at 400 ${^{\circ}C}$. And then the 3-dimensional $LiMn_2O_4$ thin film with spinel structure was fabricated by heat treatment at 700 ${^{\circ}C}$. The structural and electrochemical property was investigated by XRD, SEM and charge-discharge cycler.
Jea-gun Park,이곤섭,Kyo-suck Chae,Takahiro Miyata,Yoon-joong Kim 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6
An organic bi-stable device (OBD) was developed and exhibited non-volatile memory characteristics with a current conduction bi-stability of 1 × 102 and a threshold voltage of 2.8 V for the writing state. The OBD was fabricated with the following structure: aluminum (Al) layer / conductive organic layer / Al nano-crystals surrounded by amorphous Al2O3 / conductive organic layer / Al layer, where the organic material was 2-amino-4, 5-imidazoledicarbonitrile (AIDCN). The Al nano-crystals surrounded by the amorphous Al2O3 were several nanometers in size, with a density of 1 × 1011/cm2. The OBD could only achieve current conduction bi-stability with an Al evaporation rate of less than 0.3 °A/s.
Park, Jea-Gun,Nam, Woo-Sik,Seo, Sung-Ho,Kim, Yool-Guk,Oh, Young-Hwan,Lee, Gon-Sub,Paik, Un-Gyu American Chemical Society 2009 NANO LETTERS Vol.9 No.4
<P>Four-level nonvolatile small-molecule 4F(2) memory cells were developed with a sandwiched device structure consisting of an upper Al electrode, upper small-molecule layer (Alq(3), aluminum tris(8-hydroxyquinoline)), Ni nanocrystals surrounded by NiO tunneling barrier, lower small-molecule layer, and bottom Al electrode. In particular, an in situ O(2)-plasma oxidation process following Ni evaporation was developed to produce uniformly stable 10 nm Ni nanocrystals surrounded by a NiO tunneling barrier embedded in the small-molecule layer. They presented a memory margin (I(on)/I(off) ratio) of approximately 1 x 10(3), a retention time of more than 10(5) s, an endurance of more than 5 x 10(2) erase-and-program cycles, and multilevel cell (MLC) operation, being a terabit nonvolatile memory-cell. A vertically double-stacked 4F(2) multilevel nonvolatile memory cell was also developed, showing a memory margin of approximately 1 x 10(3) in both the top and bottom memory cells and eight-level cell operation.</P>
Fabrication of 3-Dimensional LiMn2O4 Thin Film
Bo Gun Park,Jea Hyeok Ryu,Won Youl Choi,Yong Joon Park 대한화학회 2009 Bulletin of the Korean Chemical Society Vol.30 No.3
3-Dimensionally ordered macroporous LiMn2O4 thin film was prepared by a sol-gel and dip coating method on Pt/Ti/SiO2/Si substrate. An opal structure consisting of mono dispersed polystyrene beads (300 nm) was used as a template. After solution containing Mn and Li precursors was coated on the template-deposited substrate, the template and organic materials in the precursors was removed by calcination at 400 °C . And then the 3-dimensional LiMn2O4 thin film with spinel structure was fabricated by heat treatment at 700 °C . The structural and electrochemical property was investigated by XRD, SEM and charge-discharge cycler.
Dielectric function of Si<sub>1−x</sub>Ge<sub>x</sub> films grown on silicon-on-insulator substrates
Park, In-Sung,Chan Jung, Yong,Ahn, Jinho,Shim, Tae-Hun,Lee, Du-Yeong,Park, Jea-Gun American Institute of Physics 2014 Journal of Applied Physics Vol.115 No.23
The dielectric functions of undoped and P-doped Si1-xGex (SiGe) films with a compressive strain on silicon-on-insulator (SOI) substrates are obtained by using spectroscopic ellipsometry. The respective Kato-Adachi and Tauc-Lorentz models are best fitted to the undoped and P-doped SiGe films to obtain their complex dielectric functions. The undoped SiGe films are characterized by multimodal peaks in the dielectric function, whereas the P-doped SiGe films exhibit only a broad peak. Further, the E-0 and E-1 critical points (CPs) of the undoped SiGe films are strongly dependent on the Ge concentration, whereas the E-2 CPs are independent of concentration. The E-0 and E-2 CPs in the undoped SiGe films on an SOI substrate are lower than those of SiGe on a bulk-Si substrate owing to the higher strain. For P doping in SiGe, its dose causes non-monotonic variations in E-g and E-0. (C) 2014 AIP Publishing LLC.
Park Jun-Seong,Shim Tae-Hun,Park Jea-Gun 한국물리학회 2020 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.77 No.11
The relationship of free surface area with temperature, power, and oxygen concentration in a silicon ingot grown by Czochralski method for solar cells was investigated by simulating the growing process of 4-, 6-, and 8-inch diameter ingots with a 24-inch quartz crucible. It was confirmed that the temperature at auto-temperature-control (ATC) sensor of 4-inch diameter ingot was higher than 6- and 8-inch diameter ingot due to the longer distance between triple point and ATC sensor, i.e., larger area of the free surface. In addition, it was observed that the power consumption for growing 4-inch diameter ingot was greater than 6-and 8-inch diameter ingot because of its smaller heat capacity resulted from smaller charge size. In particular, it was confirmed that the oxygen concentration of 4-inch diameter ingot was lower than those of 6- and 8-inch diameter ingots since the larger free surface area and weaker melt convection led to the lower oxygen concentration in 4-inch ingot. This understanding of the relationship of free surface area with oxygen concentration in a silicon ingot can be applicable directly to control oxygen concentration in growing different diameter of silicon ingots.