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RISS 인기검색어
- 검색키워드
- 저자 : P. Vanitha (검색결과 3 건)
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Triple Material Surrounding Gate (TMSG) Nanoscale Tunnel FET-Analytical Modeling and Simulation
Vanitha, P.,Balamurugan, N.B.,Priya, G. Lakshmi The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.6
In the nanoscale regime, many multigate devices are explored to reduce their size further and to enhance their performance. In this paper, design of a novel device called, Triple Material Surrounding Gate Tunnel Field effect transistor (TMSGTFET) has been developed and proposed. The advantages of surrounding gate and tunnel FET are combined to form a new structure. The gate material surrounding the device is replaced by three gate materials of different work functions in order to curb the short channel effects. A 2-D analytical modeling of the surface potential, lateral electric field, vertical electric field and drain current of the device is done, and the results are discussed. A step up potential profile is obtained which screens the drain potential, thus reducing the drain control over the channel. This results in appreciable diminishing of short channel effects and hot carrier effects. The proposed model also shows improved ON current. The excellent device characteristics predicted by the model are validated using TCAD simulation, thus ensuring the accuracy of our model.
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Triple Material Surrounding Gate (TMSG) Nanoscale Tunnel FET-Analytical Modeling and Simulation
P. Vanitha,N. B. Balamurugan,G. Lakshmi Priya 대한전자공학회 2015 Journal of semiconductor technology and science Vol.15 No.6
In the nanoscale regime, many multigate devices are explored to reduce their size further and to enhance their performance. In this paper, design of a novel device called, Triple Material Surrounding Gate Tunnel Field effect transistor (TMSGTFET) has been developed and proposed. The advantages of surrounding gate and tunnel FET are combined to form a new structure. The gate material surrounding the device is replaced by three gate materials of different work functions in order to curb the short channel effects. A 2-D analytical modeling of the surface potential, lateral electric field, vertical electric field and drain current of the device is done, and the results are discussed. A step up potential profile is obtained which screens the drain potential, thus reducing the drain control over the channel. This results in appreciable diminishing of short channel effects and hot carrier effects. The proposed model also shows improved ON current. The excellent device characteristics predicted by the model are validated using TCAD simulation, thus ensuring the accuracy of our model.
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Sujitha D.,Kumar H. G. Jalendra,Thapliayal Garima,Pal Garima,Vanitha P. A.,Uttarkar Akshay,Patil Mahesh,Reddy B. H. Rajashekar,Niranjan Vidya,Rayalcheruvu Usha,Govind Geetha,Udayakumar M.,Vemanna Ramu 한국식물생명공학회 2023 Plant biotechnology reports Vol.17 No.6
Reactive oxygen species (ROS) increases under stress and damages cellular processes leading to decrease in productivity. Many genes have been known to be involved in scavenging ROS. We report the identification of master regulators of oxidative stress responsive genes from contrasting rice genotypes. Using microarray analysis, we identified 52 differentially expressed transcription factors (TFs) from the contrasting rice genotypes under oxidative stress. Upregulation of these TFs induces the expression of many genes in resistant or sensitive genotypes. The promoters of these TFs are enriched with reactive oxygen species binding elements (ROSE). The promoter analysis of genes that respond to oxidative stress also revealed that these TF binding sites were present and that these genes expressed differently in contrasting rice genotypes. The transcript levels of TFs correlate with expression level of stress responsive genes coding for various pathways such as polyol, ABA, JA biosynthesis and signaling. Functional validation of HSF-C1a using virus-induced gene silencing (VIGS), showed reduced expression of its target genes. Our study demonstrates that identified TFs could act as major transcriptional regulators of oxidative stress tolerance. These TFs can be used as markers and are potential candidates to improve stress tolerance in plants.
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