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Enhanced Adhesion of Cu Film on a Low-k Material through Interfacial Modification
고연규,S. LEE,H. M. Lee,H. J. Yang,J. Y. Kim,J. Kim,J. H. Lee,신현정,남원종,J. G. Lee,C. Shim,D. Jung,E. G. Lee,C. M. Lee,P. J. Reucroft 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.3
The adhesion behavior of Cu lm on a low-k material has been investigated. A low-k flm that was deposited by using a mixture of hexamethyldisilane (HMDS) and para-xylene (p-xylene) had a dielectric constant as low as 2.7 and was thermally stable up to 400C. An interfacial Ti layer,boron dopant in the Cu flm, and N2-plasma treatment were all applied to improve adhesion betweenCu and the low-k flm. Adhesion was signicantly enhanced by the N2-plasma treatment on the low-k lm and by the boron dopant in the Cu flm. This enhanced adhesion was attributed to the formation of new binding states between Ti and the plasma-treated surface of the low-kflm and also to the diffusion of B from Cu to the Ti flm. Boron dopant in the Cu flm showed the best performance for adhesion among the three treatments. The Cu(B)/Ti/low-k flm composite annealed at 350 C withstood an applied load of about 23 N during a scratch test.
조예현,김영훈,Y. J. Jo,J. G. Seong,장시영,P. J. Reucroft,S. B. Kim,이원희 대한금속·재료학회 2015 METALS AND MATERIALS International Vol.21 No.2
Porous-surfaced Ti implant compacts, with a solid core surrounded by a porous layer, were self-assembled byelectro-discharge-sintering directly from spherical Ti powders. During an electro-discharge, instant high temperaturesthrough the Ti powder column ranged from 1093 to 4925 °C were generated in times as short as86-153 μsec. At the same time, pinch pressures ranging from 11 to 38 MPa were applied, especially to the middleof the Ti powder column. The solid core size depended on both the pinch pressure magnitude and theheat generated during a discharge. Both the pinch pressure (to squeeze and deform Ti powder particles), and theheat (to weld them together), were key factors in the production of porous-surfaced Ti implant compacts. It isthus suggested that the input energy at constant capacitance is a controllable electro-discharge parameteraffecting the porosity and strength of the porous-surfaced Ti implant compacts.