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Navamathavan, R.,Ra, Yong-Ho,Song, Ki-Young,Kim, Dong-Wook,Lee, Cheul-Ro Elsevier 2011 Current Applied Physics Vol.11 No.1
<P><B>Abstract</B></P><P>Gallium nitride (GaN) nanowire (NW) arrays were grown on a gold-coated Si(111) substrate by metalorganic chemical vapor deposition (MOCVD). Here we adopted two different experimental procedures to grow GaN NWs namely, with and without Ga predeposition on Au-coated Si(111) substrate before annealing. Comparative studies based on the morphology and growth behavior of GaN NWs were performed by using Au catalyst and Au + Ga solid solution nano-droplets. The grown GaN NWs were characterized by field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray (EDX) spectroscopy, photoluminescence (PL), cathodoluminescence (CL), high-resolution transmission electron microscopy (HR-TEM) and Raman spectroscopy. The nucleation of GaN NWs was explained in terms of Ga predeposition. As a result, we showed that the advantages of using the Au + Ga solid solution nano-droplets for growing GaN NWs.</P>
Thin-Film Transistors Based on ZnO Fabricated by Using Radio-Frequency Magnetron Sputtering
Rangaswamy Navamathavan,Seong-Ju Park,김백현,황대규,Hyun-Sik Kim,Jae-Hong Lim,장재형,Jin-Ho Yang,Jin-Yong Oh 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.II
We report on enhancement-mode thin-film transistors (TFTs) using ZnO as an active channel layer deposited by radio-frequency (rf) magnetron sputtering at 350 C. The TFT structure consisted of ZnO as a channel, SiNx as a gate insulator, and indium tin oxide (ITO) as a gate, which were deposited onto a Corning glass substrate. Atomic force microscopic images showed an atomically flat morphology of ZnO channel layer with a root-mean-square roughness of 0.7 nm. The X-ray diffraction pattern revealed a dense columnar structure of closely packed ZnO nano grains along the c-axis. The transfer characteristics of a typical ZnO TFT exhibited a field effect mobility of 1.698 cm2/V·s, a drain current on/off ratio of 105, a low off-current value on the order of 10.10 A, and a threshold voltage of 2.5 V.
Studies of Low-Dielectric-Constant SiOC(-H) Thin Films Deposited by Using MTES/O2-PECVD
Rangaswamy Navamathavan,Chi Kyu Choi,Kwang Man Lee 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.6
Low-dielectric-constant SiOC(-H) films were deposited on p-type Si (100) substrates by using plasma-enhanced chemical- vapor deposition with methyltriethoxysilane and oxygen gas as precursors. SiOC(-H) films are prepared with different radio frequency (rf) powers and annealed at different temperatures in an Ar ambient for 30 min. The film thickness and the refractive index were measured by using field emission scanning electron microscopy and ellipsometry, respectively. The bonding characteristics and the relative concentrations of the bonds in the films were investigated by using Fourier transform infrared spectroscopy in the absorbance mode. The dielectric constant of the SiOC(-H) film was evaluated by using C-V measurements on the metal-insulator-semiconductor, Al/SiOC(-H)/p-Si structure, and the experimental lowest dielectric constant of the SiOC(-H) film was found to be 2.28 at an annealing temperature 500 C. These results reveal the promising characteristics of SiOC(-H) films deposited by using methyltriethoxysilane and oxygen gases.
Preparation and Properties of Low-dielectric-constant SiOC(-H) Thin Films Deposited by Using PECVD
R. Navamathavan,이철로,R. Nirmala,김창영,Chi Kyu Choi 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.3
Low-dielectric-constant SiOC(-H) films were deposited on p-type Si(100) substrates by using plasma enhanced chemical vapor deposition (PECVD) with methyltriethoxysilane (MTES) and oxygen gas as the precursors. The SiOC(-H) films were deposited at various substrate temperatures while all the other experimental parameters were kept constant. The SiOC(-H) film’s properties,such as the deposition rate, refractive index, thickness, current-voltage (C-V) characteristics and the dielectric constant, were evaluated. The deposition rate decreased with increasing substrate temperature. The activation energies of the SiOC(-H) films were found to be -0.036 and -0.021 eV,for lower substrate temperature (RT - 200 C) and higher substrate temperature (beyond 200 C),respectively. When the substrate temperature was increased, the precursor molecules dissociated completely due to a breaking of the cage structures (voids), resulting in the formation of denser SiOC(-H) films. The dielectric constant of the SiOC(-H) film increased from 2.53 to 2.96 with increasing substrate temperature from RT to 350 ℃.
R. Navamathavan,Yong-Ho Ra,Ki-Young Song,Dong-Wook Kim,이철로 한국물리학회 2011 Current Applied Physics Vol.11 No.1
Gallium nitride (GaN) nanowire (NW) arrays were grown on a gold-coated Si(111) substrate by metalorganic chemical vapor deposition (MOCVD). Here we adopted two different experimental procedures to grow GaN NWs namely, with and without Ga predeposition on Au-coated Si(111) substrate before annealing. Comparative studies based on the morphology and growth behavior of GaN NWs were performed by using Au catalyst and Au + Ga solid solution nano-droplets. The grown GaN NWs were characterized by field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray (EDX)spectroscopy, photoluminescence (PL), cathodoluminescence (CL), high-resolution transmission electron microscopy (HR-TEM) and Raman spectroscopy. The nucleation of GaN NWs was explained in terms of Ga predeposition. As a result, we showed that the advantages of using the Au + Ga solid solution nanodroplets for growing GaN NWs.
Rangaswamy Navamathavan,Chi Kyu Choi,An Soo Jung,Hyun Seung Kim,Kwang-Man Lee,Yong Jun Jong 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.50 No.6
The SiOC(-H) films were deposited on \emph{p}-type Si(100) substrates by using UV-source-assisted plasma-enhanced chemical-vapor deposition from methyltrimethoxysilane (MTMS) and oxygen precursors. The bonding configuration and the chemical structures of the SiOC(-H) films were investigated by using Fourier- transform infrared spectroscopy in the absorbance mode. UV irradiation of the MTMS+Ar+O$_{2}$ bulk plasma enhanced the selective dissociation of precursor molecules, leading to good film formation. At the same time, the carbon content increased about 2 \% for the film deposited with UV irradiation compared to the film deposited without UV irradiation. The dielectric constant of the SiOC(-H) film deposited with UV irradiation decreased compared to that of the film deposited without UV. The lowest dielectric constant, about 2.13, was obtained for the SiOC(-H) film deposited with UV irradiation and annealed at 400 $^\circ$C with a MTMS/O$_{2}$ flow rate ratio of 80 \% at an rf power of 500 W.