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( F. Mcphee ),( L. Wei ),( Q. Xie ),( Y. Suzuki ),( J. Toyota ),( Y. Karino ),( K. Chayama ),( Y. Kawakami ),( M. L. Yu ),( S. H. Ahn ),( N. Zhou ),( H. Kumada ) 대한간학회 2016 춘·추계 학술대회 (KASL) Vol.2016 No.1
Aims: Daclatasvir (DCV) plus asunaprevir (ASV) has demonstrated highsustained virologic response (SVR) in HCV genotype (GT-)1b infection.NS5A-Y93H and NS5A-L31 resistance-associated polymorphisms(RAPs) to DCV are known to impact DCV+ASV response in GT-1b-infectedJapanese. The effect of RAPs on SVR at posttreatment week12 (SVR12) to DCV+ASV was explored in mainland Chinese, Korean,and Taiwanese.Methods: Pooled data from 2 studies of DCV (60 mg daily) + ASV(100 mg capsule, twice-daily) for 24 weeks in GT-1b-infected interferon/ribavirin-naive and -experienced patients from mainland China,Korea, and Taiwan. Similar Japanese data (4 studies; n=445) werepooled for comparison. SVR12 with versus without baseline Y93Hand/or L31 RAPs was compared by age (<65 vs ≥65 years), cirrhosisstatus, and baseline HCV-RNA.Results: SVR12 and baseline NS5A sequences were available for 282patients (126 mainland Chinese [45%〕, 80 Koreans [28%〕, 76Taiwanese [27%〕). NS5A-Y93H and/or -L31 RAPs were observed pretreatmentin 8% mainland Chinese, 14% Korean, and 18%Taiwanese patients, compared with 19% in Japanese. SVR12 in allnon-Japanese patients is shown (Figure); rates were broadly similarbetween countries and with Japanese data (Japanese: 96% overallwithout RAPs, 41% with RAPs). Responses were lower among patientswith baseline RAPs. By contrast, SVR12 in patients without RAPs washigh (92-100%), irrespective of cirrhosis, age, or baseline HCV-RNA.Conclusions: At least 95% of HCV GT-1b-infected patients from mainlandChina, Korea or Taiwan without baseline NS5A-Y93H or -L31polymorphisms who had HCV-RNA ≤7 log10 IU/mL achieved SVR12on DCV+ASV, regardless of cirrhosis status and age.
Technologies and Future Trends of Large-capacity Inverters for Grid-Scale PV Plants and BESS Plants
N. Kawakami,R. Inzunza,H. Li,Y. Mitsugi 전력전자학회 2023 ICPE(ISPE)논문집 Vol.2023 No.-
This paper presents an overview of the main technologies adopted in grid connected inverters for large scale photovoltaic (PV) plants and battery energy storage system (BESS) plants. The overview starts presenting the circuit topology, cooling system and the on-site integration and deployment of the system followed by the trends of grid forming control and frequency stabilization function expected for inverters in power systems that have introduced large-scale renewable energy power generations.
Dual Partial Dye Doping for Chromaticity Tuning and Performance Enhancement of White OLEDs
Jongwoon Park,Suganuma, N.,Kawakami, Y. IEEE 2008 Journal of display technology Vol.4 No.1
<P>In general, a guest dopant is doped into a single host matrix for white-light emission with two complementary colors. In this work, however, we have fabricated a white organic light-emitting diode (WOLED) based on dual partial dye doping in which a guest dopant is partially doped into two different host emitters; namely, orange-red emitting 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminos-tyryl)-4H-pyran (DCM) is partially doped into both blue-emitting 4, 4'-bis(2,2'-diphenylvinyl)-1,1'-biphenyl (DPVBi) and green-emitting Tris-(8-hydroxyquinoline) aluminum (Alq<SUB>3</SUB>). We demonstrate that dual partial dye doping allows us to finely tune the Commission Internationale d'Eclairage (CIE) chromaticity coordinates to the equienergy white point (x = 0.33, y = 0.33). In addition, it enhances device performance further, compared to WOLEDs based on DCM partially doped into a single host matrix (either DPVBi or Alq<SUB>3</SUB>). Moreover, the dual partial doping scheme is shown to provide a way of suppressing the self-quenching effect (singlet-singlet annihilation). For a systematic study, we have implemented a comprehensive numerical model and performed simulations of the OLED structure, providing a clear understanding with regard to the underlying physics of OLEDs. We also carry out an investigation of the effects of key design parameters such as the doped layer position and thickness and dye.</P>
Strongly correlated electrons on frustrated lattices
Tsunetsugu, H,Hattori, K,Ohashi, T,Kawakami, N,Momoi, T Institute of Physics 2009 Journal of physics. Conference series Vol.145 No.1
<P>We review our two recent theoretical works on strongly correlated electrons on typical frustrated lattices. The first topic is about a Mott transition in the single-band Hubbard model on anisotropic triangular lattice, and we discuss a reentrant behaviour of metal-insulator transition, consistent with that in a κ-type BEDT-TTF salt. The second topic is about heavy fermion behaviour in the vanadium spinel LiV<SUB>2</SUB>O<SUB>4</SUB>. We study the 3-orbital t<SUB>2<I>g</I></SUB> Hubbard model on the pyrochlore lattice at quarter filling and derive its low-energy effective model. The correlations of spin and orbital degrees of freedom are discussed.</P>
HIGH TEMPERATURE STRENGTH OF HYDROGEN ANNEALED SILICON WAFER
Matsushita, J.,Xin, P.,Hayashi, K.,Fujii, O.,Kawamura, N.,Kawakami, T.,Numano, M.,Kubota, H.,Matsushita, Y. 한국재료학회 1995 Fabrication and Characterization of Advanced Mater Vol.1 No.1
High temperature strength of hydrogen annealed silicaon wafer was investiaged. Wafers were 150mm in diameter, Czochralski-grown(100) silicon crystal. Silicon wafers were annealed at $1200^{\circ}C$ for 1 hour in a hydrogen atmosphere with a heating rate of $10^{\circ}C/min$ and $20^{\circ}C/min$ in an hot-wall furnace. Oxygen precipitate density in slow heating rate sample and rapid heating rate sample were $2{\times}10^{9}/cm^3$ and $3{\times}10^{7}/cm^3$, respectively. Decreasing the heating rate increases the oxygen precipitate density. The strength was measured by the three-point bending test at $1000^{\circ}C$ using strip-shpaped samples cult from silicon wafer. The maximum resolved shear stress($T_{max}$) at the specimen surface converted from the maximum load was dependent on strain rate and oxygen precipitate density constained in the silicon wafer. The $T_{max}$, 20.5 MPa for as-received samples, was reduced to 17.9MPa in slow heating rate sample. On the other hand, the $T_{max}$ was almost the same as 20.3 MPa in rapid heating rate sample under a strain rate of $6.9{\times}10^{-6}/s$ at $1000^{\circ}C$.
Design and Development of a High-Speed Data-Acquisition System for the Korean VLBI Network
Oh, S.-J.,Roh, D.-G.,Wajima, K.,Kawaguchi, N.,Byun, D.-Y.,Yeom, J.-H.,Je, D.-H.,Han, S.-T.,Iguchi, S.,Kawakami, K. UNIVERSAL ACADEMY PRESS, INC. 2011 Publications of the Astronomical Society of Japan Vol.63 No.6