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Leakage current transport mechanism under reverse bias in Au/Ni/GaN Schottky barrier diode
Peta, Koteswara Rao,Kim, Moon Deock Elsevier 2018 Superlattices and microstructures Vol.113 No.-
<P><B>Abstract</B></P> <P>The leakage current transport mechanism under reverse bias of Au/Ni/GaN Schottky diode is studied using temperature dependent current-voltage (I-V-T) and capacitance-voltage (C-V) characteristics. I-V measurement in this study is in the range of 140 K–420 K in steps of 10 K. A reduction in voltage dependent barrier height and a strong internal electric field in depletion region under reverse bias suggested electric field enhanced thermionic emission in carrier transport via defect states in Au/Ni/GaN SBD. A detailed analysis of reverse leakage current revealed two different predominant transport mechanisms namely variable-range hopping (VRH) and Poole-Frenkel (PF) emission conduction at low (<260 K) and high (>260 K) temperatures respectively. The estimated thermal activation energies (0.20–0.39 eV) from Arrhenius plot indicates a trap assisted tunneling of thermally activated electrons from a deep trap state into a continuum of states associated with each conductive threading dislocation.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Leakage current transport mechanism under reverse bias in Au/Ni/GaN SBDs is reported. </LI> <LI> Variable-Range Hopping and Poole-Frenkel emission are the two mechanisms are identified in reverse leakage current. </LI> <LI> The estimated thermal activation energy of an electron is in the range 0.20 eV–0.39 eV from Arrhenius analysis. </LI> </UL> </P>
Ahn, Hung Bae,Kim, Young Heon,Kim, Moon Deock,Kim, Chang Soo,Lee, Jeong Yong Elsevier 2010 Chemical physics letters Vol.499 No.1
<P>An In2O3 sheath layer was formed on an InN nanostructure by a rapid thermal oxidation process. Rounding and bursting phenomena were observed as the progression of the oxidation process was followed. InN/In2O3 core-shell structures were identified as intermediate structures. After a 20 min oxidation, the InN nanostructures were completely transformed to an In2O3 phase. InN and In2O3 had wurtzite (WZ) and body-centered cubic (BCC) structures, respectively. The preferred orientation relationship of <1 1 <(2)over bar> 0>(WZ)//<1 1 0>(BCC) and {0 0 0 1}(WZ)//{(1) over bar 1 1}(BCC) was observed between InN and In2O3. Cracks in burst nanostructures were generated at the corners and penetrated along the < 1 1 <(2)over bar> 2 0> directions. (C) 2010 Elsevier B.V. All rights reserved.</P>
Ko, Kwang-Man,Seo, Jung-Han,Kim, Dong-Eun,Lee, Sang-Tae,Noh, Young-Kyun,Kim, Moon-Deock,Oh, Jae-Eung IOP Pub 2009 Nanotechnology Vol.20 No.22
<P>It is found that the surface migration and nucleation behaviors of InSb quantum dots on AlSb/Si substrates, formed by molecular beam epitaxy in Stranski–Krastanov (SK) growth mode, are dependent on the substrate temperature. At relatively high temperatures above 430 °C, quantum dots are migrated and preferentially assembled onto the surface steps of high defect AlSb layers grown on Si substrates, while they are uniformly distributed on the surface at lower temperatures below 400 °C. It is also found that quantum dots located on the defect sites lead to effective termination of the propagation of micro-twin-induced structural defects into overlying layers, resulting in the low defect material grown on a largely mismatched substrate. The resulting 1.0 µm thick Al<SUB><I>x</I></SUB>Ga<SUB>1−<I>x</I></SUB>Sb (<I>x</I> = 0.8) layer grown on the silicon substrate shows atomically flat (0.2 nm AFM mean roughness) surface and high crystal quality, represented by a narrow full width at half-maximum of 300 arc s in the x-ray rocking curve. The room-temperature electron mobility of higher than 16 000 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> in InAs/AlGaSb FETs on the Si substrate is obtained with a relatively thin buffer layer, when a low defect density (∼10<SUP>6</SUP> cm<SUP>−2</SUP>) AlGaSb buffer layer is obtained by the proposed method. </P>
이봉춘,하덕호,김기문,Lee, Bong-Choon,Ha, Deock-Ho,Kim, Ki-Moon 한국정보통신학회 2008 한국정보통신학회논문지 Vol.12 No.9
현대 사회에서 차량은 사람과 물류를 이동시키는 주요한 역할을 담당하고 경제활동에서 필수적인 매체로 사용되고 있으며 그 대수와 이용가치가 날로 증가하는 추세에 있다. 하지만 차량 이용자의 편의성과 관리체계는 기술발전에 비해 아주 미흡한 실정이다. 본 논문에서는 현재 세대 당 1대 정도로 보유하고 있는 차량 이용자가 경유하는 행정 프로세스의 여러 경로를 우선 탐색하고 분산되어 있는 정보이용 체계를 구체화 한다. 또한, RFID를 활용한 Ubiquitous 기술과 자가 광통신망을 활용하여 각종 차량등록정보시스템을 구축한다. 특히, 차량을 관리하는 각종 행정기관 등의 중간 이용과정에서 폐차까지의 활용주기 전체를 일원화하고 첨단방식으로 관리 할 수 있는 차량정보 공동관리 모델을 개발한다. 아울러 자동차와 관련되어 다양하게 출시되고 있는RFID 활용분야의 중복 투자 방지와 표준화 추진을 위한 차량문화 선진화 정책 방안을 제시한다. In the present age, a vehicle works important part in our lives and economical domain that transport people, freights, and everything. And both of its number and value are increasing more and more. But user's convenience, control system could not be archived improvement than technological success. In this paper, we suggest some kinds of administrative agendas; simplifying executive processes, designing vehicle information system using by RFID which includes Ubiquitous skill and optical communication network. Especially, this paper suggests public vehicle control model which ran simplify every executive processes of vehicle's life in the newest method. There are many kinds of RFID applicative products about transportation. And a dual invest should be interrupted for economical purpose. So we also proposes some way for problems of these types.
Reddeppa, Maddaka,Park, Byung-Guon,Kim, Moon-Deock,Peta, Koteswara Rao,Chinh, Nguyen Duc,Kim, Dojin,Kim, Song-Gang,Murali, G. Elsevier 2018 Sensors and actuators. B, Chemical Vol.264 No.-
<P><B>Abstract</B></P> <P>In this work, reduced graphene oxide (rGO)/GaN nanorods (NRs) hybrid structure based sensors for hydrogen (H<SUB>2</SUB>) and hydrogen sulfide (H<SUB>2</SUB>S) gases has been demonstrated at room temperature. The morphological, elemental, and structural analyses were carried out by using scanning electron microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. The electrical characterization of rGO/GaN NRs hybrid structures showed good rectifying behavior compared to pristine GaN NRs. The H<SUB>2</SUB> and H<SUB>2</SUB>S gas sensing measurements at different gas concentrations revealed that the rGO/GaN NRs exhibit superior sensing properties compared to pristine GaN NRs. In order to find the gas sensing mechanism of rGO/GaN NRs, hybrid structure sensor is also tested with NO<SUB>x</SUB> gas. Our experimental results revealed that the rGO/GaN NRs are good candidates for selective detection of H<SUB>2</SUB>S gas. The rGO/GaN NRs showed remarkably improved response under ultra-violet (λ = 365 nm) illumination, the photogenerated carriers could be responsible for increasing response of the gas sensor at 30 °C under UV illumination. In addition, humidity test of the rGO/GaN NRs sensor was also conducted in this work. Our experimental results suggested that decorating GaN NRs with solution-processable rGO is one of the effective ways to enhance the response of GaN nanostructures.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The 2-dimentional rGO layer spin coated on the GaN NRs and used for improving the gas sensing properties. </LI> <LI> The rGO/GaN NRs showed higher response to the H<SUB>2</SUB> and H<SUB>2</SUB>S gases compared to pristine GaN NRs. </LI> <LI> UV illumination enhances the response of rGO/GaN NRs. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>