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- 저자 : Minji Bang(방민지) (검색결과 5 건)
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황혜진,오종수,방민지,원은수,이강수,최태규,이상혁,Hwang, Hye Jin,Oh, Jongsoo,Bang, Minji,Won, Eunsoo,Lee, Kang Soo,Choi, Tai Kiu,Lee, Sang-Hyuk 대한생물정신의학회 2019 생물정신의학 Vol.26 No.2
Objectives The objective of this study is to investigate differences in clinical characteristics between female panic disorder (PD) patients with abortion history (PD+A) and without abortion history (PD-A). Methods We examined data from 341 female patients diagnosed with PD. We divided the patients with PD into PD+A (82 patients) and PD-A (259 patients) to compare demographic and clinical characteristics. The following instruments were applied : stress coping strategies, NEO-neuroticism, the Anxiety Sensitivity Index-Revised (ASI-R), the Albany Panic and Phobia Questionnaire (APPQ), the Beck Depression Inventory, the Beck Anxiety Inventory (BAI) and the Sheehan Disability Scale. Results Compared to the PD-A, the PD+A group showed no significant difference in coping strategies. However, significantly higher scores in neuroticism, the ASI-R, the APPQ and the BAI were observed. In terms of health-related disability, the PD+A group did not show significant difference. Conclusions Our results suggest that the PD+A group may differ from the PD-A group in trait markers such as neuroticism and anxiety sensitivity, and abortion history may be associated with panic-related symptom severity. Our study suggests that further consideration is needed on such clinical characteristics in PD patients with abortion history.
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초발 조현병, 만성 조현병과 건강 대조군의 뇌활과 분계섬유줄 연결성 비교
이아리라,윤미림,육기환,최태규,이강수,방민지,이상혁,Lee, Arira,Yun, Mirim,Yook, Ki Hwan,Choi, Tai Kiu,Lee, Kang Soo,Bang, Minji,Lee, Sang-Hyuk 대한생물정신의학회 2019 생물정신의학 Vol.26 No.1
Objectives Disrupted integrities of the fornix and stria terminalis have been suggested in schizophrenia. However, very few studies have focused on the fornix and stria terminalis comparing first-episode schizophrenia (FESZ), chronic schizophrenia (CS), and healthy controls (HCs) with the application of diffusion-tensor imaging (DTI) technique. The objective of this study is to compare the connectivity of the fornix and stria terminalis among FESZ, CS, and HCs. Methods We included the 44 FESZ patients, 39 CS patients and 20 HCs in this study. Voxel-wise statistical analysis of the fractional anisotropy (FA) data was performed using Tract-Based Spatial Statistics to analyze the connectivity of fornix and stria terminalis. In addition, the Scale for the Assessment of Positive Symptoms (SAPS) and the Scale for the Assessment of Negative Symptoms (SANS) were used to evaluate clinical symptom severities. Results There were no significant differences between the FESZ, CS, and HCs in age, sex, education years. The SAPS and SANS scores of the schizophrenia groups showed no significant differences. FA values of the right fornix cres/stria terminalis in the CS group were significantly lower than those in FESZ and HCs. There were no significant differences of FA values of the right fornix cres/stria terminalis between the FESZ and the HCs. Pearson correlation analyses revealed that significant correlation between FA values of the right fornix cres/stria terminalies of the the FESZ group and positive, negative symptom scales, and FA values of the right fornix cres/stria terminalis of the CS group and negative symptom scales. Conclusions This study shows that FA values of the fornix and stria terminalis in the CS were lower than in the FESZ and the HCs. These results suggest that the fornix and stria terminalis can play a role in pathophysiology of schizophrenia. Thus current study can broaden our understanding of the pathophysiology of schizophrenia.
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Co-60 선원 감마선을 이용한 DDR4 DRAM에서의 Total Ionizing Dose 영향 연구
이경엽(Gyeongyeop Lee),서민기(Minki suh),하종현(Jonghyeon Ha),방민지(Minji Bang),김정식(Jungsik Kim) 대한전자공학회 2022 대한전자공학회 학술대회 Vol.2022 No.11
본 논문은 Dynamic Random Access Memory(DRAM)에서 bias 및 unbias에 대한 total ionizing dose(TID) effect를 감마선을 이용하여 연구하였다. 이온화 방사선에 의한 TID effect는 절연체에 트랩을 발생시켜, transistor의 누설 전류를 증가시킨다. 동일한 원리로 DRAM에서 누설 전류가 증가하기 때문에 DRAM 동작에서 다양한 오류를 보인다. 이 연구에서는 DDR4 SODIMM의 unbias와 bias 상태에 대한 감마선 열화 영향을 평가하였다. 결과는 unbias대비, bias상태에서 약 4.8배 이상의 증가된 error density를 보였다. 그 이유는 bias 상태에 따라 interface trap이 생성되는 정도가 달라지기 때문이다. Unbias 상태에서의 oxide trap 축적은 electrostatic barrier 역할을 하여 H+의 interface(oxide/channel) 방향으로 이동을 방해한다. 그러나 bias 상태에서는 강한 전계에 의해 H+의 이동이 방해 받지 않기 때문에 interface trap의 농도가 증가하게 된다. 결론적으로, bias 상태에서 더 많은 interface trap이 생성되기 때문에 error density가 증가한다.
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심층신경망을 이용한 Nanowire FETs의 공정 조건 특성 예측
하종현(Jonghyeon Ha),이경엽(Gyeongyeop Lee),서민기(Minki Suh),방민지(Minji Bang),김태형(Tae Heoung Kim),김정식(Jungsik Kim) 대한전자공학회 2022 전자공학회논문지 Vol.59 No.12
FinFET(Fin Field Effect Transistor) 이후 차세대 logic 반도체 GAAFET (Gate All Around Field Effect Transistor)인 NWFET (Nanowire FET) 그리고 NSFET (Nanosheet FET)이 주목받고 있다. 우수한 성능을 지닌 GAAFET은 이전 logic 반도체들보다 매우 높은 수준의 공정 난이도를 지닌다. 공정 난이도가 높아질수록 개발단계에서 더 많은 공정 시간 및 금액이 발생한다. 이러한 높은 비용이 투입되는 반도체 개발에 머신러닝을 도입하면 더 적은 비용 및 시간으로 공정을 진행할 수 있다. 본 논문에서는 Synopsys 사 TCAD (Technology Computed-Aided Design) Sentaurus tool과 QTX tool을 활용하여 추출한 NWFET dataset을 DNN (Deep Neural Network) 통해 반도체 소자의 parameter 변화에 따른 전기적 특성 변동에 대해 forward prediction 및 reverse prediction 사용하여 예측 및 분석하였다. Forward prediction에서는 낮은 MSE (Mean Square Error) loss 로 예측을 잘 하였지만, reverse prediction 내 D (원의 직경), W<SUB>top</SUB> (사다리꼴 윗변), Shape (Nanowire 모양), Scattering 예측과 달리 cDir (채널 격자 방향) 및 nSubbands (subband의 개수) 예측에서 cDir 및 nSubbands 변화에 따른 전기적 특성 변동 비율이 낮아 분포가 고르게 나타나지 않아 낮은 예측률을 보였다. Since FinFET (Fin Field Effect Transistor), NWFET (Nanowire FET), the next-generation logic semiconductor GAAFET (Gate All Around Field Effect Transistor), and NSFET (Nanosheet FET) have been in the spotlight. GAAFET with excellent performance has a very high level of process difficulty compared to previous logic semiconductors. As the difficulty level of the process increases, more process time and amount of money are generated in the development stage. If machine learning is introduced into such high-cost semiconductor development, the process can proceed with less cost and time. In this paper, the NWFET dataset extracted using Synopsys TCAD (Technology Computed-Aided Design) Sentaurus tool and QTX tool was predicted and analyzed using forward prediction and reverse prediction for the variation of electrical characteristics according to parameter change of semiconductor devices through DNN (Deep Neural Network). Forward prediction is well predicted with low MSE (Mean Square Error) loss, but Unlike the predictions of D (diameter of circle), W<SUB>top</SUB> (top of trapezoid), Shape (Nanowire shape), and Scattering in the Reverse prediction, the rate of change in electrical characteristics because change in cDir (channel direction) and nSubbands (the number of subbands) was low in the predictions of cDir and nSubbands, and thus the distribution was not uniform.
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