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Plasmonically enhanced emission from a group-III nitride nanowire emitter
Mastro, Michael A,Freitas Jr, Jaime A,Glembocki, Orest,Eddy Jr, Charles R,Holm, R T,Henry, Rich L,Caldwell, Josh,Rendell, Ronald W,Kub, Fritz,Kim, J IOP Pub 2007 Nanotechnology Vol.18 No.26
<P>The plasmonic response from a nanotextured silver coating was utilized to enhance the transfer of ultraviolet light generated in a group-III nitride nanowire emitter. A two-step approach was developed in a metal–organic chemical vapour deposition system to grow nanowires initially vertically by the vapour–liquid–solid mechanism and, subsequently, laterally by increasing the growth temperature and the group-V/III reactant ratio. This controllably produced a 20 nm GaN:Si core with a 200 nm outer-diameter AlGaN:Mg sheath structure. Solvothermal chemistry based on an ethylene glycol solvent was employed to deposit a silver coating that approximated a dense packing of metallic nanospheres. Nanoscale emission and plasmonically enhanced transfer of this energy were simulated to aid the development and understanding of this system.</P>
Luminescence characteristics of zinc oxide nanocrystals deposited on glass via a solution method
Mastro, M.A.,Freitas, J.A.,Eddy, C.R.,Kub, F.,Ahn, J.,Kim, H.Y.,Kim, J. North-Holland 2009 Physica E, Low-dimensional systems & nanostructure Vol.41 No.3
A simple solution growth process was employed to deposit ZnO nanowires on glass slides. The batch process was scaled from one to multiple glass slides with no apparent scaling limit observed. Strong green emission, distinctive of the ZnO surface luminescence, was measured and visualized in individual nanowires. This technique can be used to grow high-quality ZnO nanowires on any substrate.
Polarization and Space-Charge-Limited Current in III-Nitride Heterostructure Nanowires
Mastro, M. A.,Hong-Youl Kim,Jaehui Ahn,Simpkins, B.,Pehrsson, P.,Jihyun Kim,Hite, J. K.,Eddy, C. R. IEEE 2011 IEEE transactions on electron devices Vol.58 No.10
<P>An undoped AlGaN/GaN nanowire (NW) demonstrated p-type conductivity solely based on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this NW displayed a low-voltage transition from ohmic to space-charge-limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross section, which creates a doublet peak in the piezoelectric-induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces, as well as an interaction with the opposing polarization fields at two semipolar {- 110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on the configuration of the multilayer structure, and it is not amenable to an analytical model.</P>
Michael A. Mastro,김병재,정영훈,Jennifer K. Hite,Charles R. Eddy Jr.,김지현 한국물리학회 2011 Current Applied Physics Vol.11 No.3
Gallium nitride light emitting diodes were deposited on a sapphire substrate that was pre-patterned with an ordered two-dimensional structure. The size and arrangement of the substrate surface pattern was designed to increase the diffraction and extraction of light from the device as well as define the grain size and thus dislocation density of the GaN crystal. A close-packing of self-assembled SiO_2 nanospheres was used as the sacrificial etch mask. The etch process transferred a two-dimensional pattern into the sapphire substrate with a peak-to-peak dimension of approximately 250 nm. The distance was selected to match the emission wavelength in the crystal for optimal light scattering. Additionally, the dimensions of the crystal artificially defined the grain size of the GaN in contrast to the kinetically controlled grain size in a standard GaN on sapphire growth process.
Group III-nitride radial heterojunction nanowire light emitters
Michael A. Mastro,Josh Caldwell,Mark Twigg,Blake Simpkins,Orest Glembocki,Ron T. Holm,Charles R. Eddy, Jr.,Fritz Kub,김홍렬,Jaehui Ahn,김지현 한양대학교 세라믹연구소 2008 Journal of Ceramic Processing Research Vol.9 No.6
Heterojunction nanowires were fabricated via a vapor-liquid-solid growth mechanism in a metal organic chemical vapor deposition system. The structure consisted of a n-type GaN:Si core surrounding by a distinct p-type AlGaN:Mg shell. Transmission electron microscopy revealed that the nanowires were free of extended defects. Photoluminescence measured a strong UV emission peak. Additionally, sources of mid-gap transitions are linked to surface states on the nanowire surface.
Electromagnetic propagation in nanostructures
Michael A. Mastro,Charles R. Eddy Jr.,김지현,R. T. Holm 한양대학교 세라믹연구소 2008 Journal of Ceramic Processing Research Vol.9 No.1
Future integrated circuit technology will feature a fusion of optical and optoelectronic components with traditional electronic devices. Information can be rapidly transmitted as light in dielectric waveguides, photonic crystal guides and metallic nanoarrays. This paper presents a description of electromagnetic propagation in semiconductor and metallic nanostructures. Diffraction effects will dominate the propagation of light when the dimension of the cavity or device approaches its wavelength. The plasmonic effect circumvents this problem by propagating the light wave through highly localized conduction electrons in a noble metal [1]. Future integrated circuit technology will feature a fusion of optical and optoelectronic components with traditional electronic devices. Information can be rapidly transmitted as light in dielectric waveguides, photonic crystal guides and metallic nanoarrays. This paper presents a description of electromagnetic propagation in semiconductor and metallic nanostructures. Diffraction effects will dominate the propagation of light when the dimension of the cavity or device approaches its wavelength. The plasmonic effect circumvents this problem by propagating the light wave through highly localized conduction electrons in a noble metal [1].
Rechargeable zinc oxide / carbon nano-structures
M. A. Mastro,M. J. Tadjer,F. J. Kub,K. D. Hobart,C. R. Eddy, Jr,김지현,M.R. Papantonakis 한양대학교 세라믹연구소 2010 Journal of Ceramic Processing Research Vol.11 No.1
A simple solution growth process was employed to deposit ZnO nanowires on carbon nanotubes and nano-structured carbon paper. Vertical ZnO nanowires formed on the carbon paper with a hexagonal orientation. On the carbon nanotubes, the ZnO nanowires and platelets integrated as an agglomerated sphere. Electric charge flow was measured in both structures upon probe contact, and would decay over several hours. A mechanical perturbation was found to recharge the structure, which was attributed to the piezoelectric ZnO nanowires. Continuous as well as intermittent vibration coupled with an electrochemical storage mechanism to create a perpetual current source.
이홍식,이광수,류동표,V. Mastro 한국응용곤충학회 2011 한국응용곤충학회 학술대회논문집 Vol.2011 No.05
매미나방(Lymantria dispar (Linne))는 나비목(Lepidoptera) 독나방과(Lymantriidae) 에 속하며 한국을 포함하여 유럽부터 일본에 이르는 구북구지역에 분포하는 해충 이다. 자연 상태에서는 많은 천적과 병원체로 인하여 크게 피해를 주지 않는 것으 로 알려있으나 유럽계통 매미나방의 유입으로 미국 북동부, 캐나다 남동부에 막대 한 피해를 주고 있어 북미식물보호기구(North American Plant Protection Organization) 는 새로운 지역으로의 유입을 막고자 심혈을 기울이고 있어 검역적으로 중 요한 해충이다. 본 연구에서는 매미나방의 생활사를 구명하고자 2009년과 2010년 에 산란된 난괴를 사육용기에 넣고 온도 25℃, 습도 60%, 명암 14L:10D인 항온항 습실에서 실내사육하였다. 먹이는 인공사료를 냉장보관하며 공급하였으며, 유충 의 충태별 형태와 두폭 및 생육기간 등 생활사를 조사하였다. 매미나방 1령~ 5령 및 6령(암컷)에 대한 두폭크기는 0.63, 1.17, 1.90, 3.31, 4.35 및 5.65㎜이며, 변이 계수는 2.52, 2.07, 6.32, 11.82, 4.25, 및 0.72%였다. 암컷의 1령에서부터 번데기 까지의 생육기간은 6.5± 0.9, 4.2± 0.8, 3.4± 1.2, 4.5± 1.2, 5.3± 2.3, 8.7± 3.5, 13.2± 1.8일이고, 수컷은 6.8± 1.1, 4.0± 0.6, 3.6± 1.3, 5.9± 1.5, 10.8± 2.6, 14.9± 0.3일이며, 총 발육기간은 암컷 44.7± 2.5일, 수컷 45.1± 2.0일이다. 3령까지는 암 수가 비슷한 발육기간을 가지다가 4령부터 암컷의 성장이 빨라지고 먹이섭식이 왕성해지며 한 단계의 영기를 더 가지게 되지만 수컷이 4령부터 번데기 시기의 생 육기간이 길어져 실제 우화시기는 일치하는 것으로 보아 실제 자연 상태에서 성충 의 발생시기는 일치한다는 것을 알 수 있다.
Kim, Janghyuk,Mastro, Michael A.,Tadjer, Marko J.,Kim, Jihyun American Chemical Society 2017 ACS APPLIED MATERIALS & INTERFACES Vol.9 No.25
<P>beta-gallium oxide (beta-Ga2O3) and hexagonal boron nitride (h-BN) heterostructure-based quasi-two-dimensional metal-insulator-semiconductor field-effect transistors (MISFETs) were demonstrated by integrating mechanical exfoliation of (quasi)-two-dimensional materials with a dry transfer process, wherein nanothin flakes of beta-Ga2O3 and h-BN were utilized as the channel and gate dielectric, respectively, of the MISFET. The h-BN dielectric, which has an extraordinarily flat and clean surface, provides a minimal density of charged impurities on the interface between beta-Ga2O3 and h-BN, resulting in superior device performances (maximum transconductance, on/off ratio, subthreshold swing, and threshold voltage) compared to those of the conventional back-gated configurations. Also, double-gating of the fabricated device was demonstrated by biasing both top and bottom gates, achieving the modulation of the threshold voltage. This heterostructured wide-band-gap nanodevice shows a new route toward stable and high-power nanoelectronic devices.</P>