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SCHOTTKY PROPERTIES OF ION BEAM DEPOSITED W-Si-N REFRACTORY CONTACTS ON GaAs
Park, C. S.,Lee, J. S.,Yang, J. W.,Shim, K. H.,Lee, J. H.,Choe, Y. K.,Kang, J. Y.,Ma, D. S.,Lee, J. Y. 대한전자공학회 1989 ICVC : International Conference on VLSI and CAD Vol.1 No.1
We first tried low energy ion beam assisted deposition (IBAD) of refractory W-Si-N films onto GaAs for application to gate electrode of metal-semiconductor field effect transistors (MESFET). This ion beam technique provides lower process pressure, and less ion damage to substrates and films than conventional reactive sputter-deposition. The Schottky diode characteristics of W-Si-N contacts on GaAs and their thermal stability were investigated after annealing at 700-900℃ for 30 min. The Schottky barrier heights of W/, WN_(0 27)/, and WSi_(0 3)N_(0 4)/GaAs diodes annealed at 850 were 0.71, 0.84, and 0.76 eV respectively, which are comparable to those of the best results obtained by the conventional sputtering.
OHMIC METALLIZATION BEHAVIOR IN AlGaAs/GaAs MODFET STRUCTURE
Park, S. H.,Lee, J. L.,MaEng, S. J.,Park, H. H.,Lee, J. J.,Kim, J. S.,Ma, D. S.,Kang, T. W.,Lee, J. Y. 대한전자공학회 1989 ICVC : International Conference on VLSI and CAD Vol.1 No.1
We investigated the ohmic contact behavior in MODFET structure and compared with MESFET structure. In MESFET structure, the volume fraction of NiAs increases with the alloying temperature and/or the alloying time, which makes the decrease of specific contact resistance at the initial stage of ohmic metallization. In MODFET structure, the volume fraction of NiAs was not dependent upon the variation of the specific contact resistance. Therefore it is believed that the temperature dependence of specific contact resistance in MODFET structure is caused by the change of Ge concentration below NiAs phase.
ETCH CHARACTERISTICS OF GaAs/AlGaAs HETERO-STRUCTURE USING BIAS-ECR ETCHER
Park, S. H.,Lee, J. J.,Kim, B. W.,Kim, J. S.,Ma, D. S.,Kang, B. K. 대한전자공학회 1989 ICVC : International Conference on VLSI and CAD Vol.1 No.1
We fabricated a RF-biased ECR etcher on the basis of the fundamental design conception and calibrated it. And then, an ECR etch characteristics of GaAs/AlGaAs was compared with results by RIE in Cl₂-CCl₂F₂ gas mixture. Both ECR and RIE modes brought about relatively high etch selectivity of GaAs to AlGaAs under most etch conditions, though GaAs etch rate by ECR method is higher than in RIE. With increment of Cl₂ added to CCl₂F₂, the dependence on crystallographic orientation and the GaAs under cutting and etch rate remarkably increased. It seems to be due to the increase of chemically active free radicals such chlorine and/or fluorine.