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An User-driven Service Creation Architecture in Consumer Networking Environments
Yuchul Jung(정유철),Jin-Young Kim(김진영),Hyejin Lee(이혜진),Kwang-Young Kim(김광영),Dongjun Suh(서동준) 한국디지털콘텐츠학회 2016 한국디지털콘텐츠학회논문지 Vol.17 No.6
In a Web 2.0 context, users are exposed to numerous smart devices and services that allow real-time interaction between users (or consumers) and developers (or producers). For the provisioning of new user-created services based on user`s context, the data management of service creation experiences becomes a non-trivial task. This article introduces a data model for service creation and then proposes a service creation management architecture which enables new service creation using the data model, the management of the service creation data, and the semantic service discovery across internal/external service repositories. The article also explains the use of the proposed architecture with two different scenarios: home and mobile environments. The proposed architecture for service creation data management offers consistent and seamless handing of the service creation data throughout its usage lifecycle.
김주엽(Kim Ju-Yeop),김민영(Kim Min-Young),정유철(Jung Yuchul) 한국정보기술학회 2021 Proceedings of KIIT Conference Vol.2021 No.11
이미지 학습 기반 문서 레이아웃 분석기는 활용 스펙트럼이 넓어 관심이 증폭되는 영역이며, 여전히 정확도를 높이기 위한 다양한 방법이 적용되며 많은 연구가 진행되고 있다. 본 논문은 전처리 측면에서 Document Objects의 배치 방법에 따른 문서 레이아웃 분석기를 제안한다. 제안하는 레이아웃 분석기는 데이터 구축 방법에 따라 YoloV5 모델에서 각각 94.57%, 69.51%의 mAP를 확인하였다. Due to its broad spectrum of applications, deep-learning-based document layout analysis has recently grown to be an influential field. As a result, various researches are being conducted to improve the accuracies of document objects’ recognition. This paper proposes a document layout analysis that applies a new data augmentation technique based on the random placement of document objects. With our proposed two approaches, YoloV5 achieved 94.57% and 69.51% of mAP, respectively.
Jung, Yuchul,Park, Jungan,Choi, Yunjung,Yang, Jin-Gweon,Kim, Donggiun,Kim, Beom-Gi,Roh, Kyunghee,Lee, Dong-Hee,Auh, Chung-Kyoon,Lee, Sukchan BLACKWELLS 2010 JOURNAL OF INTEGRATIVE PLANT BIOLOGY Vol.52 No.10
<P>Arabis stelleri var. japonica evidenced stronger osmotic stress tolerance than Arabidopsis thaliana. Using an A. thaliana microarray chip, we determined changes in the expression of approximately 2 800 genes between A. stelleri plants treated with 0.2 M mannitol versus mock-treated plants. The most significant changes in the gene expression patterns were in genes defining cellular components or in genes associated with the endomembrane system, stimulus response, stress response, chemical stimulus response, and defense response. The expression patterns of three de novo proline biosynthesis enzymes were evaluated in A. stelleri var. japonica seedlings treated with 0.2 M mannitol, 0.2 M sorbitol, and 0.2 M NaCl. The expression of ?¹ -pyrroline-5-carboxylate synthetase was not affected by NaCl stress but was similarly induced by mannitol and sorbitol. The proline dehydrogenase gene, which is known to be repressed by dehydration stress and induced by free L-proline, was induced at an early stage by mannitol treatment, but the level of proline dehydrogenase was increased later by treatment with both mannitol and NaCl. The level of free L-proline accumulation increased progressively in response to treatments with mannitol, sorbitol, and NaCl. Mannitol induced L-proline accumulation more rapidly than NaCl or sorbitol. These findings demonstrate that the osmotic tolerance of the novel halophyte, Arabis stelleri, is associated with the accumulation of L-proline.</P>
Effect of dynamic stress on off leakage of small-dimension pMOSFETs at high temperature
Kim, Gang-Jun,Seo, Ji-Hoon,Son, Donghee,Lee, Nam-Hyun,Kang, YoungHa,Hwang, YuChul,Kang, Bongkoo Institute of Pure and Applied Physics 2014 Japanese Journal of Applied Physics Vol. No.
<P>The degradation of the off leakage current I-off in small-dimension pMOSFETs is investigated experimentally while applying a dynamic stress to the pMOSFETs. During the OFF-state stress, the dynamic stress induced an increase of I-off due to generation of negative oxide charges N-ox in the gate dielectric, and in the shallow trench isolation (STI) near the gate edge. When channel width W decreased, negative N-ox in STI increase I-off significantly, and the degradation of I-off is more critical than degradation of V-th. These observations indicate that the effect of the dynamic stress in pMOSFETs on I-off should be seriously considered when evaluating small-dimension pMOSFETs. (C) 2014 The Japan Society of Applied Physics</P>