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ION IRRADLATION STUDIES OC CARGON FILMS PREPARED BY PLASMA ASSISTED CVD METHOD
Bhattacharyya, Bhattacharyya, Somnath-,Sayeed, Ahmed,Kanjilal, Kanjilal, D.,Subramanyam, S.V 한국재료학회 1995 Fabrication and Characterization of Advanced Mater Vol.1 No.3
Amorphous hydrogeneted carbon films were prepared by plasma assisted cvd metnod and their dc conductivity as studied as a function of temperature in the range of 300K to 10K. Films were then subjected to high energy(170MeV)$I^{+13}$ ion irradiation. After irradiation an marked change was observed in the conductivity and its temperature dependenc. The conductivity decreased by 2 to 3 orders of magnitude, room temperature activation energy increased and a gap appeared in the electronic structure. Photo-emission spectropic study on the material show a decrease in the $\pi$ states of the electronic density of states spectrum from UPS and a noticible change in the Cls peak shape in XPS.
Manna Ashis K.,Joshi Shalik R.,Satpati B.,Dash P.,Chattaraj Ananya,Srivastava S.K.,Kanjilal A.,Kanjilal D.,Varma Shikha 한국물리학회 2022 Current Applied Physics Vol.43 No.-
The present study explores the role of Ti ion implantation in structural phase transition in TiO2 thin films. Raman and TEM results reveal that after implantation Rutile phase in films increases at the expense of Anatase nanostructures. Though the as-deposited films display the presence of bigger anatase nanoparticles, after implantation, predominantly phonon confined smaller (~ 8 nm in size) anatase nanostructures are observed. GIXRD and Raman results further reflect presence of a critical fluence, 1 × 1013 ions/cm2, where the initial transformation from anatase to Rutile phase is observed. The role of Oxygen vacancies, in this transformation, has been explored here by XPS. Modifications in UV–Vis and Bandgap results show rich behavior which also reflects phase transformation at the critical fluence. Results further indicate that the phase transition gets first initiated deeper in the film and later on the surface. Interestingly, aggregation of larger Anatase nano-particles appears to be responsible for the structural transformation as observed here.
Subsecond melt processing for achieving SiGe layers
Matthias Voelskow,Aloke Kanjilal,Wolfgang Skorupa 한국물리학회 2010 Current Applied Physics Vol.10 No.5
Flash lamp annealing induced rapid melting of a near surface Ge enriched Si wafer and the subsequent formation of SiGe layers were demonstrated. The formation of an undesirable facetted liquid/solid interface, well known for pulse melting in the millisecond time regime, was found to decrease significantly due to the increasing melting temperature of Si with reducing Ge concentration at the SiGe/Si interface. A dislocation network and the existence of strain, which were evidenced by transmission electron microscopy and μ-Raman measurements, respectively, are expected to play an important role to form thin SiGe layers.
Mohit Garg,Uma Kanjilal 한국과학기술정보연구원 2022 Journal of Information Science Theory and Practice Vol.10 No.3
This paper aims to implement a topic modeling technique for extracting the topics of online discussions among library professionals in India. Topic modeling is the established text mining technique popularly used for modeling text data from Twitter, Facebook, Yelp, and other social media platforms. The present study modeled the online discussions of Library and Information Science (LIS) professionals posted on Lis Links. The text data of these posts was extracted using a program written in R using the package “rvest.” The data was pre-processed to remove blank posts, posts having text in non-English fonts, punctuation, URLs, emails, etc. Topic modeling with the Latent Dirichlet Allocation algorithm was applied to the pre-processed corpus to identify each topic associated with the posts. The frequency analysis of the occurrence of words in the text corpus was calculated. The results found that the most frequent words included: library, information, university, librarian, book, professional, science, research, paper, question, answer, and management. This shows that the LIS professionals actively discussed exams, research, and library operations on the forum of Lis Links. The study categorized the online discussions on Lis Links into ten topics, i.e. “LIS Recruitment,” “LIS Issues,” “Other Discussion,” “LIS Education,” “LIS Research,” “LIS Exams,” “General Information related to Library,” “LIS Admission,” “Library and Professional Activities,” and “Information Communication Technology (ICT).” It was found that the majority of the posts belonged to “LIS Exam,” followed by “Other Discussions” and “General Information related to the Library.”
The Effect of Low Energy Nitrogen Ion Implantation on Graphene Nanosheets
Mukesh Mishra,Subbiah Alwarappan,Dinaker Kanjilal,Tanuja Mohanty 대한금속·재료학회 2018 ELECTRONIC MATERIALS LETTERS Vol.14 No.4
Herein, we report the effect 50 keV nitrogen ion implantation at varying fluence on the optical properties of graphenenanosheets (number of layers < 5). Initially, graphene nanosheets synthesized by the direct liquid exfoliation of graphitelayers were deposited on a cleaned Si-substrate by drop cast method. These graphene nanosheets are implanted with 50 keVnitrogen-ion beam at six different fluences. Raman spectroscopic results show that the D, D′ and G peak get broadened upto the nitrogen ion fluence of 1 × 1015 ions/cm2, while 2D peak of graphene nanosheets disappeared for nitrogen-ions havefluence more than 1014ions/cm2. However, further increase of fluence causes the indistinguishable superimposition of D,D′ and G peaks. Surface contact potential value analysis for ion implanted graphene nanosheets shows the increase in defectconcentration from 1.15 × 1012 to 1.98 × 1014 defects/cm2 with increasing the nitrogen ion fluence, which resembles theFermi level shift towards conduction band. XRD spectra confirmed that the crystallinity of graphene nanosheets was foundto tamper with increasing fluence. These results revealed that the limit of nitrogen ion implantation resistant on the vibrationalbehaviors for graphene nanosheets was 1015ions/cm2 that opens up the scope of application of graphene nanosheetsin device fabrication for ion-active environment and space applications.
Gastroprotective and digestive potential of an Ayurvedic asava–arishta preparation
Anjan Adhikari,Amitabha Dey,Satyajyoti Kanjilal,Rajarshi Biswas,Deepa Gandhi,Kamarujjaman Mondal,Bibhuti Nath Bhatt,Tapas Kumar Sur,Satyabrata Mohapatra,Avinash Narwaria,Chandra Kant Katiyar 경희대학교 융합한의과학연구소 2018 Oriental Pharmacy and Experimental Medicine Vol.18 No.4
Asavas and arishtas are considered as important Ayurvedic self-fermented dosage forms which are being used widely to promote health and well-being and for management of digestive and metabolic disorders. The present investigation was carried out to study the potential of an Ayurvedic polyherbal asava–arishta preparation (ZP) in gastroprotection, intestinal motility and gastric dyspepsia in experimental rodent models. The gastroprotective effect of ZP at doses 1.5, 3 and 6 ml/ kg of body weight was studied using battery of animal models such as pyloric ligation in rats, intestinal transit time using charcoal meal test, gastric emptying and digestive stimulation action in rats. In addition, anti-spasmodic activity was studied using isolated guinea pig’s ileum. The role digestive enzymes such as pepsin, α-amylase and lipase were accessed by various enzymatic assays. A dose-dependent and statistically significant (p < 0.01) inhibitory effect on reducing gastric volume, free acidity, total acidity and ulcer index were observed in ZP treated animals as compared to the control. ZP also enhanced the mucin content of the gastric juice. Pre-treatment with ZP produced a dose-dependent effect in reducing intestinal motility, intestinal spasms and increased the gastric emptying time in rats. These observations validated the age old claims of ZP for its use as digestive tonic. Thus, results concluded that ZP is having potential to improve digestion and reduces recurrent digestive ailments.
Singh, J.P.,Gautam, S.,Srivastava, R.C.,Asokan, K.,Kanjilal, D.,Chae, K.H. Academic Press 2015 Superlattices and microstructures Vol.86 No.-
Present work investigates the crossover from paramagnetism to superparamagnetism as a function of crystallite size in zinc ferrite nanoparticles using near edge X-ray absorption spectroscopy. Synthesized paramagnetic and superparamagnetic nanoparticles exhibit presence of Fe<SUP>2+</SUP> and Fe<SUP>3+</SUP> ions with dominant concentration of Fe<SUP>3+</SUP> ions. Fe L- and O K-edges spectra of paramagnetic nanoparticles consist of more intense spectral features compared to that of superparamagnetic nanoparticles. This reflects enhanced t<SUB>2g</SUB> and e<SUB>g</SUB> symmetry states of Fe-O hybridized states in paramagnetic nanoparticles induced by increased degree of crystallization.
High-energy ion induced physical and surface modifications in antimony sulphide thin films
S. Subramanian,M. Balaji,P. Chithra Lekha,K. Asokan,D. Kanjilal,Indra Sulania,Jai Prakash,D. Pathinettam Padiyan 한국물리학회 2010 Current Applied Physics Vol.10 No.4
Sb2S3 thin films prepared by electrodeposition on indium tin oxide coated glass substrate were irradiated with 150 MeV Ni11+ ions for various fluence in the range of 1011–1013 ions/㎠. The modifications in the structure, surface morphology and optical properties have been studied as a function of ion fluence. X-ray diffraction (XRD) analysis indicates a shift in the (2 4 0) peak position towards lower diffraction angle and a decrease in grain size with increase in ion fluence. Presence of microcracks due to irradiation induced grain splitting effect has been observed from the SEM micrograph at higher ion fluence. The optical absorbance spectrum revealed a shift in the fundamental absorption edge and the band gap energy increased from a value of 1.63 eV for as-deposited films to 1.80 eV for the films irradiated with 1013 ions/㎠.
Kumar, Parmod,Malik, Hitendra K.,Gautam, S.,Chae, K.H.,Asokan, K.,Kanjilal, D. Elsevier 2017 JOURNAL OF ALLOYS AND COMPOUNDS Vol.710 No.-
<P><B>Abstract</B></P> <P>Present study shows that dense electronic excitations caused by ion beam irradiation in Zn<SUB>0.9</SUB>Mg<SUB>0.1</SUB>O films lead to significant changes in room temperature ferromagnetism. It is found that defects are playing dominant role in the modification of various physical properties including ferromagnetic behaviour. Presence of defects were investigated through photoluminescence spectroscopy along with local electronic structure study using X-ray absorption spectroscopy. This novel observation is relevant to get further insight into ferromagnetic origin and maybe applied to tune magnetic properties for spintronic applications. A strong correlation exists between the ferromagnetic properties and defects produced during high energy irradiation.</P> <P><B>Highlights</B></P> <P> <UL> <LI> RF sputtered Zn<SUB>0.9</SUB>Mg<SUB>0.1</SUB>O thin films. </LI> <LI> Investigation on magnetic properties of Zn<SUB>0.9</SUB>Mg<SUB>0.1</SUB>O films caused by SHI irradiation. </LI> <LI> Presence of defects were confirmed through PL and XAS. </LI> </UL> </P>